STPSA42 Equivalent & Substitute Parts

Part Overview

The STPSA42 is an NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics, rated for 300 V collector-emitter breakdown voltage and 500 mA maximum collector current. The device is packaged in a TO-92-3 through-hole configuration with a maximum power dissipation of 625 mW and transition frequency of 50 MHz. The STPSA42 is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating available product status and packaging options.

Substiute Parts

STPSA42
STMicroelectronicsIn Stock: 842STPSA42 Datasheet
STPSA42
Current Part
2N4401BU
onsemiIn Stock: 99862N4401BU Datasheet
2N4401BU
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2N6517BU
onsemiIn Stock: 202202N6517BU Datasheet
2N6517BU
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ZTX657
Diodes IncorporatedIn Stock: 9343ZTX657 Datasheet
ZTX657
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KSP42BU
onsemiIn Stock: 105225KSP42BU Datasheet
KSP42BU
Parametric Equivalent
MPSA42
Diotec SemiconductorIn Stock: 27040MPSA42 Datasheet
MPSA42
Parametric Equivalent
MPSA42BK
Diotec SemiconductorIn Stock: 20880MPSA42BK Datasheet
MPSA42BK
Parametric Equivalent

Key Parameters

Parameter STPSA42 Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 300 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 625 mW
Frequency - Transition 50 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Operating Temperature (Max) 150 °C
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitute parts for the STPSA42 are classified into two categories based on electrical parameter alignment:

Parametric Equivalents maintain identical or near-identical electrical specifications across all critical parameters: 300 V collector-emitter breakdown voltage, 500 mA maximum collector current, 625 mW power dissipation, 50 MHz transition frequency, 40 hFE minimum at specified bias conditions, and 500 mV saturation voltage at specified currents. These parts are direct functional replacements suitable for applications where the STPSA42 specifications are required.

Functional Alternatives provide similar electrical performance within acceptable operating ranges but may differ in one or more secondary parameters such as transition frequency, maximum operating temperature, or collector cutoff current. These parts are suitable for applications where the primary electrical requirements (voltage, current, power) are met, but secondary performance characteristics may vary.

The following parameters determine substitution eligibility:

  • Voltage - Collector Emitter Breakdown (Max): minimum 300 V
  • Current - Collector (Ic) (Max): minimum 500 mA
  • Power - Max: minimum 625 mW
  • DC Current Gain (hFE): minimum 40 at specified bias
  • Vce Saturation: maximum 500 mV at specified bias
  • Mounting Type: Through Hole
  • Package compatibility: TO-92-3 or TO-92 compatible

Parameter Comparison

Parameter STPSA42 KSP42BU MPSA42 MPSA42BK ZTX657 2N6517BU 2N4401BU
Manufacturer STMicroelectronics onsemi Diotec Semiconductor Diotec Semiconductor Diodes Incorporated onsemi onsemi
Transistor Type NPN NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V 300 V 300 V 350 V 40 V
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA 500 mA 600 mA
Power - Max 625 mW 625 mW 625 mW 625 mW 1 W 625 mW 625 mW
Frequency - Transition 50 MHz 50 MHz 50 MHz 50 MHz 30 MHz 200 MHz 250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V 40 @ 30mA, 10V 40 @ 30mA, 10V 40 @ 30mA, 10V 50 @ 100mA, 5V 20 @ 50mA, 10V 100 @ 150mA, 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 10mA, 100mA 1V @ 5mA, 50mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 50nA (ICBO)
Operating Temperature (Max) 150°C 150°C 150°C 150°C 200°C 150°C 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-92-3 TO-92-3 TO-92 TO-92 E-Line-3 TO-92-3 TO-92-3
Product Status Obsolete Active Active Active Active Last Time Buy Active
RoHS Status ROHS3 Compliant ROHS3 Compliant Not applicable Not applicable ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Parametric Equivalents (Direct Replacements)

KSP42BU (onsemi) and MPSA42 / MPSA42BK (Diotec Semiconductor) are parametric equivalents to the STPSA42, maintaining identical electrical specifications across all critical parameters: 300 V breakdown voltage, 500 mA collector current, 625 mW power dissipation, 50 MHz transition frequency, and matching saturation voltage and current gain characteristics. KSP42BU is recommended as the primary substitute due to active product status and ROHS3 compliance. MPSA42 and MPSA42BK are available in higher inventory quantities and provide equivalent electrical performance; however, RoHS compliance status is not applicable for these parts.

Secondary Functional Alternative

ZTX657 (Diodes Incorporated) maintains the critical 300 V breakdown voltage and 500 mA collector current specifications with enhanced power dissipation capability (1 W versus 625 mW) and extended operating temperature range (-55°C to 200°C). The transition frequency is reduced to 30 MHz, which is acceptable for applications not requiring the full 50 MHz bandwidth of the STPSA42. ZTX657 is active and ROHS3 compliant. The E-Line-3 package is mechanically compatible with TO-92-3 footprints.

Not Recommended for Direct Substitution

2N6517BU exhibits reduced DC current gain (20 hFE minimum versus 40 minimum) and elevated saturation voltage (1 V versus 500 mV), making it unsuitable for applications requiring the STPSA42 gain and saturation characteristics. Product status is Last Time Buy, limiting long-term availability.

2N4401BU is not suitable due to insufficient collector-emitter breakdown voltage (40 V versus 300 V required), despite higher transition frequency and collector current capability. This part is designed for low-voltage applications and does not meet the voltage requirements of STPSA42-based circuits.

Frequently Asked Questions (FAQ)

Q: Can KSP42BU be used as a direct replacement for STPSA42 in all applications?

A: Yes. KSP42BU is a parametric equivalent with identical electrical specifications across all critical parameters: 300 V breakdown voltage, 500 mA collector current, 625 mW power dissipation, 50 MHz transition frequency, 40 hFE minimum, and 500 mV saturation voltage. The TO-92-3 package is mechanically and electrically compatible. KSP42BU is active and ROHS3 compliant.

Q: What is the difference between MPSA42 and MPSA42BK?

A: MPSA42 and MPSA42BK are electrically identical, both manufactured by Diotec Semiconductor with identical electrical specifications. The difference is packaging: MPSA42 is supplied in Cut Tape (CT) format, while MPSA42BK is supplied in Box format. Both are suitable for STPSA42 replacement. RoHS compliance status is not applicable for both variants.

Q: Why is ZTX657 listed as a secondary alternative rather than a primary equivalent?

A: ZTX657 maintains the critical 300 V breakdown voltage and 500 mA collector current specifications but differs in transition frequency (30 MHz versus 50 MHz) and package type (E-Line-3 versus TO-92-3). While the E-Line-3 package is mechanically compatible with TO-92-3 footprints, the reduced transition frequency makes it suitable only for applications where the full 50 MHz bandwidth is not required. ZTX657 offers enhanced power dissipation (1 W) and extended temperature range, making it advantageous for high-temperature or high-power applications.

Q: Is 2N4401BU a suitable substitute for STPSA42?

A: No. 2N4401BU has a maximum collector-emitter breakdown voltage of 40 V, which is insufficient for STPSA42 applications requiring 300 V operation. Although 2N4401BU offers higher transition frequency (250 MHz) and collector current (600 mA), the voltage limitation makes it unsuitable for direct substitution. 2N4401BU is designed for low-voltage applications and cannot be used in circuits designed for 300 V operation.

Q: What are the key parameters that determine STPSA42 substitution eligibility?

A: Substitution eligibility is determined by the following parameters: (1) Voltage - Collector Emitter Breakdown minimum 300 V, (2) Current - Collector (Ic) maximum minimum 500 mA, (3) Power dissipation minimum 625 mW, (4) DC Current Gain (hFE) minimum 40 at specified bias conditions, (5) Vce Saturation maximum 500 mV at specified bias, (6) Through Hole mounting type, and (7) TO-92-3 or TO-92 compatible package. Parts meeting all these criteria are direct parametric equivalents.

Q: Are there inventory considerations when selecting a substitute?

A: Yes. KSP42BU has the highest inventory availability (105,200 pcs), followed by MPSA42 (27,010 pcs) and MPSA42BK (20,778 pcs). ZTX657 has 9,300 pcs available. 2N6517BU (Last Time Buy status) has 20,200 pcs but is approaching end-of-life. For long-term production requirements, KSP42BU is recommended due to active status and highest inventory levels.

Q: Can ZTX657 be used in high-frequency applications requiring 50 MHz operation?

A: No. ZTX657 has a transition frequency of 30 MHz, which is below the STPSA42 specification of 50 MHz. For applications requiring 50 MHz or higher transition frequency, KSP42BU, MPSA42, or MPSA42BK are required. ZTX657 is suitable only for applications where the maximum required frequency is 30 MHz or lower.

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