STP9NM60N Equivalent & Substitute Parts

Part Overview

The STP9NM60N is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 6.5A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the MDmesh™ II series. The part is designated as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for applications requiring continued sourcing, design flexibility, or performance optimization within the 600V N-Channel MOSFET category.

Key Parameters

Parameter	STP9NM60N	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.5	A
Power Dissipation (Max)	70	W
Rds On (Max) @ Id, Vgs	745	mOhm @ 3.25A, 10V
Gate Charge (Qg) (Max) @ Vgs	17.4	nC @ 10V
Operating Temperature (TJ)	150	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP9NM60N is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 600V Vdss specification to ensure safe operation in the same circuit topology.

Current Rating: Substitute parts with equal or higher continuous drain current (6.5A or greater) provide direct replacement capability. Parts with lower current ratings require circuit re-evaluation.

On-Resistance (Rds On): Substitute parts with comparable or lower Rds On values at equivalent gate drive voltages (10V) ensure thermal performance and efficiency characteristics remain within acceptable ranges.

Gate Charge (Qg): Lower gate charge values reduce driver power dissipation and switching losses, while higher values increase driver requirements.

Package and Mounting: All substitute parts are specified in TO-220-3 through-hole configuration, ensuring mechanical and thermal interface compatibility.

Compliance: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory profile of the main part.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Product Status
STP9NM60N	STMicroelectronics	600	6.5	745 @ 3.25A, 10V	17.4 @ 10V	70	Not For New Designs
FCP7N60	onsemi	600	7	600 @ 3.5A, 10V	30 @ 10V	83	Not For New Designs
AOT10N60	Alpha & Omega Semiconductor Inc.	600	10	750 @ 5A, 10V	40 @ 10V	250	Not For New Designs
AOT10N60L	Alpha & Omega Semiconductor Inc.	600	10	750 @ 5A, 10V	40 @ 10V	250	Active
IXFP10N60P	IXYS	600	10	740 @ 5A, 10V	32 @ 10V	200	Active
IXFP14N60P	IXYS	600	14	550 @ 7A, 10V	36 @ 10V	300	Active
IXTP10N60P	IXYS	600	10	740 @ 5A, 10V	32 @ 10V	200	Active
FDP12N60NZ	onsemi	600	12	650 @ 6A, 10V	34 @ 10V	240	Obsolete

Engineering Selection Recommendations

For Direct Replacement with Minimal Circuit Changes:

The FCP7N60 (onsemi) provides the closest current rating match at 7A, representing only a 7.7% increase over the STP9NM60N's 6.5A specification. This part offers improved on-resistance (600 mOhm vs. 745 mOhm) and higher power dissipation capability (83W vs. 70W). However, FCP7N60 is designated "Not For New Designs," limiting its suitability for long-term production.

For Active Product Status with Higher Current Capability:

The IXFP10N60P and IXTP10N60P (both IXYS) are rated at 10A continuous drain current with active product status. Both devices maintain comparable on-resistance (740 mOhm) and provide 200W power dissipation. These parts are suitable for applications requiring extended component lifecycle and higher current margins. The IXFP10N60P and IXTP10N60P are functionally equivalent, with IXFP10N60P offering HiPerFET™ technology designation.

For Maximum Performance Upgrade:

The IXFP14N60P (IXYS) provides the highest current rating at 14A with superior on-resistance (550 mOhm) and 300W power dissipation. This part is active and suitable for designs requiring enhanced thermal performance and current headroom. Gate charge increases to 36 nC, requiring driver capability verification.

For Active Status with Balanced Specifications:

The AOT10N60L (Alpha & Omega Semiconductor Inc.) is the only substitute part with active product status matching the 10A current class. It provides 250W power dissipation and maintains ROHS3 compliance and REACH unaffected status. Operating temperature range extends to -55°C, providing broader environmental coverage than the main part.

Obsolete Part Consideration:

The FDP12N60NZ (onsemi) is designated obsolete and should not be selected for new designs or long-term production sourcing.

Frequently Asked Questions (FAQ)

Q: Can the STP9NM60N be directly replaced with a lower-current rated substitute?

A: No. Substitute parts must maintain equal or higher continuous drain current ratings. Using a part with lower current capacity reduces design margin and may cause thermal stress or device failure under rated load conditions.

Q: What is the significance of on-resistance (Rds On) when selecting a substitute?

A: On-resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce heat generation at equivalent current levels. The STP9NM60N specifies 745 mOhm at 3.25A, 10V. Substitute parts with comparable or lower Rds On values maintain thermal characteristics; higher values increase junction temperature and may require thermal management redesign.

Q: Are all substitute parts compatible with the same gate driver circuit?

A: Gate charge (Qg) varies among substitutes, ranging from 17.4 nC (STP9NM60N) to 40 nC (AOT10N60). Higher gate charge requires greater driver current capability. Verify that the existing gate driver can supply the required charge for the selected substitute part. The 10V gate drive voltage is consistent across all parts.

Q: Why do some substitute parts have higher power dissipation ratings?

A: Power dissipation rating reflects the device's thermal capability in the TO-220-3 package under specified conditions. Higher ratings indicate improved thermal design or larger die area. This does not mean the device will dissipate more power in your circuit; actual dissipation depends on application current and on-resistance. Higher ratings provide greater thermal margin.

Q: What is the difference between IXFP10N60P and IXTP10N60P?

A: Both parts are rated at 10A, 600V with identical electrical specifications (740 mOhm Rds On, 32 nC gate charge, 200W power dissipation). IXFP10N60P is designated HiPerFET™ Polar series, while IXTP10N60P is designated Polar series. Both are active products with equivalent performance for substitution purposes.

Q: Is the AOT10N60L suitable for new designs?

A: Yes. The AOT10N60L is the only substitute part with active product status, making it the recommended choice for new designs requiring a 600V, 10A N-Channel MOSFET in TO-220-3 packaging. It maintains full ROHS3 compliance and REACH unaffected status.

Q: Can I use a substitute part with higher current rating in a circuit designed for the STP9NM60N?

A: Yes. Substitute parts with equal or higher current ratings are electrically compatible. Higher current ratings provide design margin and do not degrade circuit performance. Verify that on-resistance and gate charge specifications are acceptable for your gate driver and thermal management design.

Q: What is the operating temperature range difference between the main part and substitutes?

A: The STP9NM60N specifies 150°C maximum junction temperature. Most substitute parts (FCP7N60, AOT10N60, AOT10N60L, IXFP10N60P, IXFP14N60P, IXTP10N60P, FDP12N60NZ) specify -55°C to 150°C operating range, providing broader low-temperature capability. This does not affect high-temperature performance but may be relevant for applications in cold environments.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and REACH unaffected status, matching the regulatory profile of the STP9NM60N.

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