STP9NM50N Equivalent & Substitute Parts

Part Overview

The STP9NM50N is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 500V drain-to-source voltage with 5A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is part of the MDmesh™ series. The product status is listed as obsolete, necessitating identification of equivalent substitute components that maintain functional compatibility for existing designs or new production requirements.

Substiute Parts

STP9NM50N

STMicroelectronicsIn Stock: 2312STP9NM50N Datasheet

Current PartRFQ

IRFB11N50APBF

Vishay SiliconixIn Stock: 15530IRFB11N50APBF Datasheet

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IXTP6N50D2

IXYSIn Stock: 3382IXTP6N50D2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STP9NM50N are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 500V (exact match required)
• FET Type: N-Channel (exact match required)
• Package Type: TO-220-3 through-hole (exact match required)
• Technology: MOSFET Metal Oxide (exact match required)
• Operating Temperature Range: -55°C to 150°C (minimum requirement)

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 5A
• Rds On (Max): Equal to or less than 560 mOhm (lower is acceptable)
• Power Dissipation (Max): Equal to or greater than 70W
• Gate Threshold Voltage: Within ±1V of 4V specification

The identified substitute parts meet all critical matching parameters and maintain electrical performance within acceptable ranges for direct replacement in circuit applications.

Parameter Comparison

Engineering Selection Recommendations

IRFB11N50APBF (Vishay Siliconix)

This substitute provides direct functional replacement for the STP9NM50N. The IRFB11N50APBF maintains identical voltage and temperature specifications while offering enhanced current handling (11A versus 5A) and improved power dissipation capability (170W versus 70W). The device is currently in active production status, ensuring long-term availability. RoHS3 compliance and REACH unaffected status align with the original part's regulatory requirements. The lower Rds On value (520 mOhm) provides improved efficiency characteristics.

IXTP6N50D2 (IXYS)

This substitute meets all critical electrical and mechanical compatibility requirements with 500V Vdss, N-Channel configuration, and TO-220-3 packaging. The IXTP6N50D2 offers 6A continuous drain current and exceptional power dissipation capability (300W). This device is currently in active production status. RoHS3 compliance and REACH unaffected status match regulatory requirements. The Depletion Mode feature and lower Rds On specification (500 mOhm @ 3A, 0V) represent design variations that require circuit-level evaluation for specific applications.

Both substitute parts are actively manufactured, fully compliant with RoHS3 and REACH regulations, and available in standard inventory quantities.

Frequently Asked Questions (FAQ)

Q: Can the IRFB11N50APBF directly replace the STP9NM50N in all applications?

A: The IRFB11N50APBF meets all critical electrical and mechanical specifications for direct replacement. The higher current rating (11A) and power dissipation (170W) provide enhanced performance margins. Identical gate threshold voltage (4V @ 250µA) and operating temperature range (-55°C to 150°C) ensure functional compatibility. Thermal management and PCB layout considerations remain unchanged.

Q: What is the primary difference between the IXTP6N50D2 and the other substitutes?

A: The IXTP6N50D2 is specified as a Depletion Mode device, whereas the STP9NM50N and IRFB11N50APBF are enhancement mode MOSFETs. This fundamental difference affects gate drive requirements and circuit behavior. The IXTP6N50D2 requires circuit-level evaluation to confirm compatibility with existing gate drive circuitry.

Q: Are all three devices available in the same packaging?

A: All three devices use TO-220-3 through-hole packaging. Physical pin configuration and thermal pad dimensions are identical, allowing direct PCB mounting compatibility without layout modifications.

Q: What regulatory compliance applies to these substitute parts?

A: All three devices are RoHS3 compliant and REACH unaffected. Moisture sensitivity level is rated as MSL 1 (Unlimited) for all parts, indicating no special storage or handling requirements.

Q: Why is the STP9NM50N listed as obsolete?

A: The STP9NM50N is designated as obsolete by STMicroelectronics. The identified substitute parts are currently in active production status, ensuring continued availability and supply chain reliability for new designs or production continuity.

Q: How do the Rds On specifications compare across the three devices?

A: The STP9NM50N specifies 560 mOhm @ 3.7A, 10V. The IRFB11N50APBF specifies 520 mOhm @ 6.6A, 10V, representing improved on-resistance at higher current. The IXTP6N50D2 specifies 500 mOhm @ 3A, 0V, which reflects depletion mode operation at zero gate voltage. Direct comparison requires evaluation at identical operating conditions.

Q: What inventory status applies to these parts?

A: The STP9NM50N has 2,244 pieces in stock (obsolete status). The IRFB11N50APBF has 15,426 pieces in stock (active status). The IXTP6N50D2 has 3,330 pieces in stock (active status). Active production status for the substitute parts provides long-term supply assurance.