STP9NK80Z Equivalent & Substitute Parts

Part Overview

The STP9NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-voltage switching applications. This device features an 800 V drain-to-source voltage rating with 7.5 A continuous drain current capability in a through-hole TO-220 package. The part is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and procurement needs.

Substiute Parts

STP9NK80Z

STMicroelectronicsIn Stock: 2307STP9NK80Z Datasheet

Current PartRFQ

IRFB9N65APBF

Vishay SiliconixIn Stock: 1968IRFB9N65APBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP9NK80Z is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Technology: MOSFET (Metal Oxide) construction required
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 800 V rating
• Current - Continuous Drain (Id): Substitute must support minimum 7.5 A at 25°C
• On-State Resistance (Rds On): Substitute performance must be compatible with application requirements
• Operating Temperature Range: Must support -55°C to 150°C (TJ) operation
• Power Dissipation: Substitute must handle thermal requirements of the application

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole configuration required
• Package / Case: TO-220-3 footprint required for direct board-level substitution
• Supplier Device Package: TO-220 or TO-220AB variants acceptable

The IRFB9N65APBF qualifies as a substitute based on matching N-Channel MOSFET topology, through-hole TO-220AB mounting, and compatible operating temperature range. However, the Vdss rating of 650 V is lower than the primary part's 800 V specification, requiring application-level voltage verification.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The STP9NK80Z is classified as obsolete. The IRFB9N65APBF is an active product with current manufacturing support and availability, making it suitable for new designs and ongoing procurement.

Compliance and Certification: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying environmental regulatory requirements. The IRFB9N65APBF offers improved moisture sensitivity classification (MSL 1 versus MSL 3), providing superior handling and storage characteristics.

Electrical Performance: The IRFB9N65APBF demonstrates superior on-state resistance (0.93 Ohm versus 1.2 Ohm) and lower gate charge (48 nC versus 84 nC), resulting in improved switching efficiency and reduced drive circuit requirements. The substitute part supports higher continuous drain current (8.5 A versus 7.5 A) and equivalent power dissipation capability (167 W versus 150 W).

Voltage Rating Differential: The primary distinction between these parts is the Vdss rating: STP9NK80Z operates at 800 V while IRFB9N65APBF operates at 650 V. Selection between these parts depends on the maximum drain-to-source voltage present in the application circuit. Applications operating below 650 V can utilize the IRFB9N65APBF without restriction. Applications requiring 800 V operation must retain the STP9NK80Z or identify alternative 800 V rated devices.

Mechanical Compatibility: Both parts utilize identical TO-220-3 through-hole packaging, enabling direct board-level substitution without layout modification.

Frequently Asked Questions (FAQ)

Q: Can the IRFB9N65APBF directly replace the STP9NK80Z in all applications?

A: Direct substitution is possible only in applications where the maximum drain-to-source voltage does not exceed 650 V. The IRFB9N65APBF is rated for 650 V operation, while the STP9NK80Z is rated for 800 V. Circuit analysis must confirm that the application voltage remains within the 650 V limit of the substitute part.

Q: What are the advantages of using the IRFB9N65APBF over the STP9NK80Z?

A: The IRFB9N65APBF offers lower on-state resistance (0.93 Ohm versus 1.2 Ohm), reduced gate charge (48 nC versus 84 nC), higher continuous drain current capability (8.5 A versus 7.5 A), and active product status with ongoing manufacturing support. Additionally, the MSL 1 rating provides superior moisture handling compared to the MSL 3 rating of the STP9NK80Z.

Q: Are there any package differences between these parts?

A: Both parts utilize the TO-220-3 through-hole package. The STP9NK80Z is supplied in standard TO-220 packaging, while the IRFB9N65APBF is supplied in TO-220AB packaging. Both variants are mechanically and electrically compatible with TO-220-3 footprints.

Q: What is the significance of the gate charge difference?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRFB9N65APBF requires 48 nC compared to 84 nC for the STP9NK80Z. Lower gate charge reduces drive circuit power consumption and enables faster switching transitions, improving overall circuit efficiency.

Q: How does the on-state resistance affect circuit performance?

A: On-state resistance (Rds On) directly impacts power dissipation during conduction. The IRFB9N65APBF exhibits 0.93 Ohm resistance versus 1.2 Ohm for the STP9NK80Z. Lower resistance reduces conduction losses and heat generation, improving thermal performance and allowing operation at higher current levels within the same thermal budget.

Q: Are both parts suitable for high-temperature applications?

A: Both parts support identical operating temperature ranges of -55°C to 150°C (TJ), making them equally suitable for high-temperature applications. Temperature derating curves should be consulted for specific thermal design calculations.

Q: What compliance certifications apply to both parts?

A: Both the STP9NK80Z and IRFB9N65APBF are ROHS3 compliant and REACH unaffected, satisfying environmental and regulatory requirements for European and international markets.