STP9NK70Z Equivalent & Substitute Parts

Part Overview

The STP9NK70Z is an N-Channel 700V 7.5A MOSFET manufactured by STMicroelectronics in the SuperMESH™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part delivers 115W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	7.5	A
Rds On (Max) @ 4A, 10V	1.2	Ohm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4.5	V
Gate Charge (Qg) @ 10V	68	nC
Power Dissipation (Max)	115	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STP9NK70Z is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

Drain to Source Voltage (Vdss): Equal to or greater than 700V
Continuous Drain Current (Id): Equal to or greater than 7.5A
Gate Drive Voltage: 10V nominal
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Substitution Logic: Parts are classified as direct or similar substitutes based on whether they meet or exceed the electrical specifications of the STP9NK70Z while maintaining mechanical and thermal compatibility. Direct substitutes provide equivalent or superior performance with minimal circuit redesign. Similar substitutes offer functional equivalence but may require circuit evaluation due to parameter variations.

Parameter Comparison

Parameter	STP9NK70Z (Main)	STP10NK80Z (Direct)	IXFP10N80P (Similar)	SPP04N60C3XKSA1 (Similar)
Manufacturer	STMicroelectronics	STMicroelectronics	IXYS	Infineon Technologies
Vdss (V)	700	800	800	600
Id @ 25°C (A)	7.5	9	10	4.5
Rds On (Max) (Ohm)	1.2 @ 4A, 10V	0.9 @ 4.5A, 10V	1.1 @ 5A, 10V	0.95 @ 2.8A, 10V
Vgs(th) (Max) (V)	4.5 @ 100µA	4.5 @ 100µA	5.5 @ 2.5mA	3.9 @ 200µA
Gate Charge (Qg) @ 10V (nC)	68	72	40	25
Power Dissipation (Max) (W)	115	190	300	50
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Obsolete
RoHS3 Compliance	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

STP10NK80Z (Direct Substitute - Recommended): The STP10NK80Z is the primary substitute for the STP9NK70Z. Both devices are manufactured by STMicroelectronics within the SuperMESH™ series and share identical gate threshold voltage specifications. The STP10NK80Z provides superior electrical performance with 800V Vdss rating, 9A continuous drain current, and 190W power dissipation. The device is currently in active production status, ensuring long-term availability. RoHS3 compliance and REACH unaffected status are maintained. This substitute requires no circuit modifications for standard applications operating within the original design envelope.

IXFP10N80P (Similar Substitute - Alternative): The IXFP10N80P from IXYS is an active-status alternative offering 800V Vdss and 10A continuous drain current in the same TO-220-3 package. This device delivers 300W maximum power dissipation and features lower gate charge (40 nC) compared to the main part. The higher gate threshold voltage (5.5V @ 2.5mA) and different gate charge characteristics require circuit evaluation in gate-drive-sensitive applications. RoHS3 compliance and REACH unaffected status are confirmed. This substitute is suitable for applications where enhanced thermal performance is beneficial.

SPP04N60C3XKSA1 (Similar Substitute - Limited Scope): The SPP04N60C3XKSA1 from Infineon Technologies is an obsolete CoolMOS™ device with reduced electrical ratings (600V Vdss, 4.5A continuous drain current). This substitute is applicable only to applications where the original design specifications can accommodate lower voltage and current ratings. The 50W power dissipation is significantly reduced compared to the main part. This option is not recommended for direct replacement in designs requiring full STP9NK70Z performance envelope. RoHS3 compliance and REACH unaffected status are maintained.

Frequently Asked Questions (FAQ)

Q: Can the STP10NK80Z be used as a direct replacement for the STP9NK70Z without circuit modifications?

A: Yes. The STP10NK80Z meets or exceeds all electrical specifications of the STP9NK70Z. Both devices share identical gate threshold voltage (4.5V @ 100µA), maximum gate voltage (±30V), and operating temperature range (-55°C to 150°C). The higher voltage and current ratings of the STP10NK80Z provide design margin in existing circuits. No circuit modifications are required for standard applications.

Q: What are the key differences between the STP10NK80Z and IXFP10N80P?

A: Both devices operate at 800V Vdss and provide superior current handling compared to the STP9NK70Z. The primary differences are: (1) Gate charge is significantly lower in the IXFP10N80P (40 nC versus 72 nC), resulting in faster switching; (2) Gate threshold voltage differs (5.5V @ 2.5mA for IXFP10N80P versus 4.5V @ 100µA for STP10NK80Z), affecting gate-drive circuit design; (3) Power dissipation rating is higher for IXFP10N80P (300W versus 190W). Selection depends on gate-drive requirements and thermal management strategy.

Q: Is the SPP04N60C3XKSA1 suitable for all applications using the STP9NK70Z?

A: No. The SPP04N60C3XKSA1 has reduced electrical ratings (600V Vdss, 4.5A continuous drain current) compared to the STP9NK70Z (700V, 7.5A). This substitute is applicable only to applications where the design specifications can accommodate lower voltage and current ratings. Applications requiring the full performance envelope of the STP9NK70Z must use the STP10NK80Z or IXFP10N80P.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed are housed in the TO-220-3 through-hole package, ensuring mechanical and thermal interface compatibility with existing PCB designs and heat sink assemblies.

Q: What is the compliance status of these substitute parts?

A: All substitute parts are RoHS3 compliant and REACH unaffected. The STP10NK80Z and IXFP10N80P are currently in active production status, ensuring long-term supply availability. The SPP04N60C3XKSA1 is classified as obsolete.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFP10N80P has significantly lower gate charge (40 nC) compared to the STP9NK70Z (68 nC) and STP10NK80Z (72 nC). Lower gate charge enables faster switching and reduces gate-drive power dissipation. Applications with high switching frequencies benefit from lower gate charge. Gate-drive circuits must be evaluated to confirm adequate drive current capability for the selected device.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Gate charge and threshold voltage variations require circuit evaluation for high-frequency applications. The IXFP10N80P, with its lower gate charge (40 nC), may provide improved switching performance. The STP10NK80Z maintains closer electrical alignment with the original STP9NK70Z. Circuit simulation or prototype testing is necessary to confirm performance in applications exceeding 100 kHz switching frequency.

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