STP9NK65Z Equivalent & Substitute Parts

Part Overview

The STP9NK65Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 6.4A continuous drain current at 25°C. This device is part of the SuperMESH™ series and is designed for through-hole mounting in TO-220-3 package configuration. The part is currently in active production status with 1823 units in stock.

Equivalent and substitute parts are identified when design requirements allow for variations in electrical performance within specified operating parameters, or when the primary part becomes unavailable due to supply constraints or end-of-life status.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	6.4	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	1.2	Ohm @ 3.2A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 100µA
Gate Charge (Qg Max) @ Vgs	41	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	MOSFET
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the STP9NK65Z is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 650V for direct substitution without circuit redesign. Parts rated below 650V require application review.

Current Capability: The continuous drain current (Id) at 25°C must support the application's maximum current demand. Parts with lower current ratings may require thermal management review.

On-State Resistance (Rds On): Lower Rds On values reduce power dissipation and heat generation. Higher values increase losses but remain functionally compatible if thermal design accommodates increased dissipation.

Package and Mounting: All substitute parts must use TO-220-3 through-hole mounting to ensure mechanical and thermal interface compatibility.

Gate Charge and Threshold Voltage: These parameters affect switching speed and gate drive requirements. Variations within the specified ranges maintain compatibility with standard gate drive circuits.

Compliance and Status: Active production status and RoHS3 compliance ensure long-term availability and regulatory conformance.

Parameter Comparison

Parameter	STP9NK65Z (Main)	IRFB9N65APBF	IXFP10N80P	FCP4N60	SPP04N60C3XKSA1
Manufacturer	STMicroelectronics	Vishay Siliconix	IXYS	Fairchild Semiconductor	Infineon Technologies
Vdss (V)	650	650	800	600	600
Id @ 25°C (A)	6.4	8.5	10	3.9	4.5
Rds On Max (Ohm)	1.2 @ 3.2A, 10V	0.93 @ 5.1A, 10V	1.1 @ 5A, 10V	1.2 @ 2A, 10V	0.95 @ 2.8A, 10V
Vgs(th) Max (V)	4.5 @ 100µA	4 @ 250µA	5.5 @ 2.5mA	5 @ 250µA	3.9 @ 200µA
Qg Max (nC)	41 @ 10V	48 @ 10V	40 @ 10V	16.6 @ 10V	25 @ 10V
Power Dissipation Max (W)	125	167	300	50	50
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220AB	TO-220-3	TO-220-3	PG-TO220-3
Product Status	Active	Active	Active	Active	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant

Engineering Selection Recommendations

IRFB9N65APBF (Vishay Siliconix): This part matches the 650V voltage rating of the STP9NK65Z and provides superior current capability at 8.5A with improved on-state resistance of 0.93 Ohm. The higher power dissipation rating of 167W accommodates increased thermal load. This device is in active production status with RoHS3 compliance. The IRFB9N65APBF is suitable for applications requiring higher current capacity or lower conduction losses than the STP9NK65Z.

IXFP10N80P (IXYS): This part offers the highest voltage rating at 800V and maximum current capability at 10A with 300W power dissipation. The higher voltage rating provides additional design margin for transient overvoltage conditions. This device is in active production status with RoHS3 compliance. The IXFP10N80P is appropriate for applications with higher voltage stress or current demands, or where design margin for voltage spikes is required.

FCP4N60 (Fairchild Semiconductor): This part operates at 600V, which is below the 650V rating of the STP9NK65Z. The continuous drain current is limited to 3.9A, and power dissipation is 50W. This device is in active production status. The FCP4N60 is suitable only for applications where the 600V voltage rating is acceptable and current requirements do not exceed 3.9A.

SPP04N60C3XKSA1 (Infineon Technologies): This part is rated for 600V operation with 4.5A continuous drain current and 50W power dissipation. The device is currently in obsolete production status, indicating limited future availability. RoHS3 compliance is confirmed. The SPP04N60C3XKSA1 should not be selected for new designs due to obsolete status, though it may be considered for legacy system maintenance where existing inventory exists.

Frequently Asked Questions (FAQ)

Q: Can the IRFB9N65APBF directly replace the STP9NK65Z in all applications?

A: The IRFB9N65APBF shares the same 650V voltage rating and TO-220 package configuration. The improved current capability (8.5A vs. 6.4A) and lower on-state resistance (0.93 Ohm vs. 1.2 Ohm) make it functionally compatible. Gate charge and threshold voltage are within acceptable ranges for standard gate drive circuits. Direct substitution is supported for applications operating within the STP9NK65Z's original specifications.

Q: What is the primary limitation of the FCP4N60 as a substitute?

A: The FCP4N60 operates at 600V, which is 50V below the STP9NK65Z rating. Applications designed for 650V operation may experience reduced voltage margin during transient conditions. Additionally, the 3.9A current rating is significantly lower than the STP9NK65Z's 6.4A, limiting its use to lower-current applications. Substitution requires verification that the application's maximum voltage stress does not exceed 600V and current demand does not exceed 3.9A.

Q: Why is the SPP04N60C3XKSA1 marked as obsolete?

A: The SPP04N60C3XKSA1 is listed with obsolete product status, indicating that Infineon Technologies has discontinued active production. While existing inventory may be available, long-term supply cannot be guaranteed. New designs should not incorporate this part. Existing systems using this device may require redesign to transition to active production alternatives.

Q: Are all substitute parts RoHS3 compliant?

A: The IRFB9N65APBF, IXFP10N80P, and SPP04N60C3XKSA1 are confirmed RoHS3 compliant. The FCP4N60 does not specify RoHS status in the provided data. For applications requiring RoHS3 compliance certification, the IRFB9N65APBF and IXFP10N80P are confirmed suitable alternatives.

Q: How does the IXFP10N80P's higher voltage rating affect circuit design?

A: The IXFP10N80P is rated for 800V, providing 150V additional voltage margin compared to the STP9NK65Z. This higher rating does not require circuit modifications but offers increased protection against transient overvoltage events. The device maintains compatible gate charge (40 nC) and threshold voltage characteristics. Applications can operate the IXFP10N80P at 650V without modification, gaining additional voltage headroom.

Q: What thermal considerations apply when substituting with higher-rated devices?

A: The IRFB9N65APBF (167W) and IXFP10N80P (300W) have higher power dissipation ratings than the STP9NK65Z (125W). These ratings indicate the device's thermal capability, not the actual power dissipation in the circuit. Actual dissipation depends on application current and on-state resistance. Lower on-state resistance in substitute parts typically reduces conduction losses, potentially lowering thermal requirements compared to the original device.

Q: Can gate drive circuits designed for the STP9NK65Z operate substitute parts without modification?

A: All substitute parts maintain compatible gate threshold voltage ranges (3.9V to 5.5V) and gate charge specifications (16.6 nC to 48 nC) within standard gate drive circuit tolerances. The ±30V maximum gate voltage specification is consistent across all parts. Standard gate drive circuits designed for the STP9NK65Z operate substitute parts without modification.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message