STP9NK60ZD N-Channel 600V 7A MOSFET Equivalent & Substitute Parts

Part Overview

The STP9NK60ZD is an N-Channel 600V 7A MOSFET manufactured by STMicroelectronics in the SuperFREDmesh™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 125W maximum power dissipation at the case temperature and operates across the industrial temperature range of -55°C to 150°C.

Due to its obsolete status, alternative components with matching or compatible electrical and mechanical specifications are required for new production runs, repairs, and design revisions. Substitute parts must maintain compatibility with existing circuit designs while meeting the same functional requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7	A
On-State Resistance (Rds On) @ 3.5A, 10V	950	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4.5	V
Gate Charge (Qg) @ 10V	53	nC
Input Capacitance (Ciss) @ 25V	1110	pF
Power Dissipation (Max)	125	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
Gate Voltage (Max)	±30	V

Substitute Part Grouping Explanation

Substitution of the STP9NK60ZD is determined by strict adherence to the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 7A or greater at 25°C
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
Gate Voltage Rating (Vgs): ±30V or greater

Secondary Compatibility Factors:

On-State Resistance (Rds On): Values within acceptable circuit performance margins
Gate Charge (Qg): Affects switching speed and driver requirements
Input Capacitance (Ciss): Influences gate drive circuit design
Power Dissipation Capability: Minimum 125W at case temperature

Substitute parts are classified into two categories: parametric equivalents (matching all primary criteria) and similar parts (meeting primary voltage and current requirements with acceptable performance trade-offs).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
STP9NK60ZD	STMicroelectronics	600	7	950	53	1110	125	TO-220-3	Obsolete
STP9NK60Z	STMicroelectronics	600	7	950	53	1110	125	TO-220-3	Active
FCP7N60	onsemi	600	7	600	30	920	83	TO-220-3	Not For New Designs
IRFB9N60APBF	Vishay Siliconix	600	9.2	750	49	1400	170	TO-220-3	Active
IRFBC40APBF	Vishay Siliconix	600	6.2	1200	42	1036	125	TO-220-3	Active
FCP4N60	Fairchild Semiconductor	600	3.9	1200	16.6	540	50	TO-220-3	Active
SPP04N60C3XKSA1	Infineon Technologies	600	4.5	950	25	490	50	TO-220-3	Obsolete

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The STP9NK60Z from STMicroelectronics is the direct parametric equivalent to the STP9NK60ZD. This part maintains identical electrical specifications across all critical parameters including Vdss, Id, Rds On, Qg, and Ciss. The primary distinction is product status: STP9NK60Z is active and available for new designs, whereas STP9NK60ZD is obsolete. Both parts are ROHS3 compliant and REACH unaffected. The STP9NK60Z is supplied in tube packaging and represents the recommended replacement for procurement and design continuity.

Compatible Substitutes (Performance Trade-offs):

IRFB9N60APBF (Vishay Siliconix) exceeds the STP9NK60ZD specification with higher continuous drain current (9.2A versus 7A) and superior power dissipation capability (170W versus 125W). The lower on-state resistance (750mOhm versus 950mOhm) provides improved efficiency. This part is suitable for applications where higher current capacity or thermal performance is beneficial. Product status is active with ROHS3 compliance.

IRFBC40APBF (Vishay Siliconix) provides a near-equivalent alternative with 6.2A continuous drain current and 125W power dissipation matching the original specification. The higher on-state resistance (1200mOhm) represents a trade-off in conduction losses. This part is active and ROHS3 compliant, suitable for applications with less stringent efficiency requirements.

FCP7N60 (onsemi) matches the 7A current rating with improved on-state resistance (600mOhm) and lower gate charge (30nC), resulting in reduced switching losses. Power dissipation is rated at 83W, which is lower than the original 125W specification. This part is classified as not for new designs, limiting its suitability for new development.

Parts Not Recommended:

FCP4N60 (Fairchild Semiconductor) provides only 3.9A continuous drain current, falling below the 7A requirement of the original specification. This part is unsuitable for direct replacement in applications requiring the full 7A rating.

SPP04N60C3XKSA1 (Infineon Technologies) is obsolete with only 4.5A continuous drain current and 50W power dissipation, both insufficient for the STP9NK60ZD application requirements.

Frequently Asked Questions (FAQ)

Q: Can the STP9NK60Z be used as a direct replacement for the STP9NK60ZD?

A: Yes. The STP9NK60Z is a parametric equivalent with identical electrical specifications. Both parts share the same Vdss (600V), Id (7A), Rds On (950mOhm), gate charge (53nC), and input capacitance (1110pF). The primary difference is product status: STP9NK60Z is active while STP9NK60ZD is obsolete. Both are housed in TO-220-3 packages and are ROHS3 compliant.

Q: What is the difference between the STP9NK60ZD and STP9NK60Z?

A: The STP9NK60ZD belongs to the SuperFREDmesh™ series and is obsolete. The STP9NK60Z belongs to the SuperMESH™ series and is active. All electrical parameters are identical. The STP9NK60Z is supplied in tube packaging versus the STP9NK60ZD's standard packaging. For new designs and procurement, the STP9NK60Z is the recommended choice.

Q: Can I use the IRFB9N60APBF in place of the STP9NK60ZD?

A: Yes, with performance enhancement. The IRFB9N60APBF exceeds the original specification with 9.2A continuous drain current (versus 7A) and 170W power dissipation (versus 125W). The on-state resistance is lower at 750mOhm, improving efficiency. The part is housed in TO-220-3 package and is active with ROHS3 compliance. This substitution is suitable when higher current capacity or thermal performance is advantageous.

Q: Why is the FCP4N60 not recommended as a substitute?

A: The FCP4N60 provides only 3.9A continuous drain current, which is below the 7A requirement of the STP9NK60ZD. Additionally, power dissipation is limited to 50W compared to the original 125W specification. This part cannot reliably handle the full current and thermal demands of applications designed for the STP9NK60ZD.

Q: What are the key parameters I should verify when selecting a substitute?

A: The critical parameters for substitution are: (1) Drain to Source Voltage (Vdss) of 600V minimum, (2) Continuous Drain Current (Id) of 7A or greater at 25°C, (3) TO-220-3 through-hole package compatibility, (4) Operating temperature range of -55°C to 150°C, and (5) Gate voltage rating of ±30V or greater. Secondary considerations include on-state resistance, gate charge, and power dissipation capability relative to your circuit requirements.

Q: Is the FCP7N60 suitable for new designs?

A: The FCP7N60 is classified as not for new designs. While it matches the 7A current rating and provides improved on-state resistance (600mOhm), its obsolescence status makes it unsuitable for new development. For new designs, the STP9NK60Z or IRFB9N60APBF are recommended active alternatives.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: Both TO-220-3 and TO-220AB are through-hole packages with three leads suitable for the STP9NK60ZD application. The designations refer to the same physical form factor used in this product category. All substitute parts listed maintain compatibility with the original TO-220-3 mounting configuration.

Q: Can I use multiple lower-current parts in parallel to replace the STP9NK60ZD?

A: Parallel operation of MOSFETs requires careful circuit design to ensure balanced current distribution and thermal management. This approach is outside the scope of direct part substitution and requires detailed circuit analysis. For direct replacement, select a single part meeting or exceeding the 7A specification.

Q: What compliance certifications should I verify for substitute parts?

A: All recommended substitute parts are ROHS3 compliant. The STP9NK60Z and FCP7N60 are REACH unaffected. The Vishay parts (IRFB9N60APBF and IRFBC40APBF) are REACH affected. Verify compliance requirements for your specific application and regional regulations before final part selection.

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