STP9NK60Z Equivalent & Substitute Parts

Part Overview

The STP9NK60Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 7A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the SuperMESH™ series. The component is currently in Active product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design specifications permit operation within the electrical and mechanical parameters of alternative devices. The substitute parts listed maintain compatibility with the primary electrical characteristics and mechanical form factor of the STP9NK60Z.

Substiute Parts

STP9NK60Z

STMicroelectronicsIn Stock: 25826STP9NK60Z Datasheet

Current PartRFQ

FCP7N60

onsemiIn Stock: 15208FCP7N60 Datasheet

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IRFBC40APBF

Vishay SiliconixIn Stock: 1658IRFBC40APBF Datasheet

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IXFP10N80P

IXYSIn Stock: 1036IXFP10N80P Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP9NK60Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): 600V minimum
• Continuous Drain Current (Id): 7A minimum at 25°C
• Package Type: TO-220-3 through-hole configuration
• Operating Temperature Range: -55°C to 150°C minimum
• Gate Drive Voltage: 10V maximum

Secondary Compatibility Parameters:

• On-State Resistance (Rds On): Devices with equal or lower resistance values
• Gate Charge (Qg): Lower values preferred for faster switching
• Input Capacitance (Ciss): Lower values preferred for reduced gate drive requirements
• Power Dissipation: Equal or higher ratings acceptable

The substitute parts FCP7N60, IRFBC40APBF, and IXFP10N80P meet the primary substitution criteria with the following considerations:

FCP7N60 (onsemi): Matches 600V/7A rating with improved Rds On (600 mOhm vs 950 mOhm) and reduced gate charge (30 nC vs 53 nC). Product status is Not For New Designs.

IRFBC40APBF (Vishay Siliconix): Matches 600V rating with 6.2A continuous drain current (within acceptable tolerance of 7A specification). Rds On is 1.2 Ohm at 3.7A, 10V. Power dissipation matches at 125W.

IXFP10N80P (IXYS): Exceeds primary specifications with 800V Vdss and 10A continuous drain current. This device operates at higher voltage and current ratings, suitable for applications with higher design margins.

Parameter Comparison

Engineering Selection Recommendations

STP9NK60Z (Primary Selection)

The STP9NK60Z remains the primary component choice for new designs. It is in Active product status with full RoHS3 compliance and REACH Unaffected classification. This device provides the specified 600V/7A rating with established supply availability (25,791 pcs in stock).

FCP7N60 (onsemi) - Limited Substitution

The FCP7N60 provides electrical equivalence with improved performance characteristics (lower Rds On and gate charge). However, this device carries a "Not For New Designs" product status designation. Use of FCP7N60 is restricted to legacy system maintenance or replacement applications where the original STP9NK60Z is unavailable. RoHS3 compliance and REACH Unaffected status are maintained.

IRFBC40APBF (Vishay Siliconix) - Conditional Substitution

The IRFBC40APBF is suitable for applications where the 6.2A continuous drain current rating is acceptable within design margins. This device maintains 600V Vdss rating and 125W power dissipation matching the STP9NK60Z. Active product status and RoHS3 compliance are confirmed. Note that REACH Status is listed as REACH Affected, requiring compliance verification for applications subject to REACH regulations.

IXFP10N80P (IXYS) - Higher Rating Substitution

The IXFP10N80P operates at elevated voltage (800V) and current (10A) ratings compared to the STP9NK60Z. This device is suitable for applications requiring higher design margins or operating at voltages exceeding 600V. The increased input capacitance (2050 pF) and higher gate charge requirements must be evaluated against gate driver capabilities. Active product status, RoHS3 compliance, and REACH Unaffected status are confirmed.

Frequently Asked Questions (FAQ)

Q: Can FCP7N60 be used as a direct replacement for STP9NK60Z in new designs?

A: No. Although FCP7N60 meets the electrical specifications for 600V/7A operation, it carries a "Not For New Designs" product status. New designs must use STP9NK60Z or other Active-status alternatives such as IRFBC40APBF or IXFP10N80P.

Q: What is the primary difference between STP9NK60Z and FCP7N60?

A: Both devices share identical 600V/7A ratings and TO-220-3 packaging. FCP7N60 offers superior on-state resistance (600 mOhm vs 950 mOhm) and lower gate charge (30 nC vs 53 nC), resulting in reduced conduction losses and faster switching. However, FCP7N60 is not recommended for new designs.

Q: Is IRFBC40APBF a suitable substitute if my application requires exactly 7A continuous drain current?

A: IRFBC40APBF is rated for 6.2A continuous drain current at 25°C, which is 0.8A below the STP9NK60Z specification. Substitution is acceptable only if circuit design margins permit operation at 6.2A or if thermal management ensures the device operates below 25°C junction temperature, allowing higher current capability.

Q: Why does IXFP10N80P have higher input capacitance than STP9NK60Z?

A: IXFP10N80P is rated for 800V drain-to-source voltage and 10A continuous drain current, both higher than STP9NK60Z. The increased input capacitance (2050 pF vs 1110 pF) is a direct result of the larger die size required to support these higher ratings. Gate driver circuits must be evaluated to ensure adequate drive capability.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts (FCP7N60, IRFBC40APBF, and IXFP10N80P) are packaged in TO-220-3 through-hole configuration, maintaining mechanical compatibility with STP9NK60Z. PCB layout and thermal management considerations remain unchanged.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts maintain RoHS3 compliance. REACH status varies: STP9NK60Z, FCP7N60, and IXFP10N80P are REACH Unaffected; IRFBC40APBF is REACH Affected. Applications subject to REACH regulations must verify compliance requirements before selecting IRFBC40APBF.

Q: Can IXFP10N80P be used in circuits designed for 600V operation?

A: Yes. IXFP10N80P is rated for 800V maximum drain-to-source voltage, which exceeds the 600V requirement. The device operates safely at 600V with additional voltage margin. However, the higher current rating (10A vs 7A) and increased input capacitance must be considered in circuit design and gate driver selection.

Q: What is the impact of lower gate charge in FCP7N60 compared to STP9NK60Z?

A: Lower gate charge (30 nC vs 53 nC) reduces the energy required to switch the device on and off, resulting in lower gate driver power dissipation and faster switching transitions. This is advantageous for high-frequency applications but requires gate driver circuits capable of delivering the required charge within the switching time window.