STP9N60M2 Equivalent & Substitute Parts

Part Overview

The STP9N60M2 is an N-Channel 600V 5.5A MOSFET manufactured by STMicroelectronics in the MDmesh™ II Plus series. This device is packaged in TO-220-3 through-hole configuration and is rated for 60W power dissipation at case temperature. The part is currently Active in product status with 2270 units in stock inventory.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging. Alternative devices may be required due to supply constraints, design optimization, or application-specific performance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	5.5	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	780	mOhm @ 3A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	10	nC @ 10V
Maximum Gate Voltage (Vgs)	±25	V
Input Capacitance (Ciss) @ Vds	320	pF @ 100V
Power Dissipation (Max)	60	W
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	-
Package / Case	TO-220-3	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for the STP9N60M2 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 600V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 or compatible TO-220 variant

Performance Compatibility Criteria:

Continuous Drain Current (Id) @ 25°C: Equal to or greater than 5.5A
Drive Voltage (Max Rds On): 10V
Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
Maximum Gate Voltage (Vgs): ±25V or greater
Operating Temperature: 150°C or higher

Compliance Criteria:

RoHS3 Compliant
REACH Status: Unaffected or Affected (both acceptable)

The following substitute parts meet these criteria and are electrically and mechanically compatible with the STP9N60M2:

AOT10N60 (Alpha & Omega Semiconductor Inc.)
FDP12N60NZ (onsemi)
IRFB9N60APBF (Vishay Siliconix)
IXFP10N60P (IXYS)

Parameter Comparison

Parameter	STP9N60M2	AOT10N60	FDP12N60NZ	IRFB9N60APBF	IXFP10N60P
Manufacturer	STMicroelectronics	Alpha & Omega Semiconductor Inc.	onsemi	Vishay Siliconix	IXYS
Vdss (V)	600	600	600	600	600
Id @ 25°C (A)	5.5	10	12	9.2	10
Drive Voltage (V)	10	10	10	10	10
Rds On (Max) @ Id, Vgs (mOhm)	780 @ 3A, 10V	750 @ 5A, 10V	650 @ 6A, 10V	750 @ 5.5A, 10V	740 @ 5A, 10V
Vgs(th) (Max) @ Id (V)	4 @ 250µA	4.5 @ 250µA	5 @ 250µA	4 @ 250µA	5.5 @ 1mA
Gate Charge (Qg) @ Vgs (nC)	10 @ 10V	40 @ 10V	34 @ 10V	49 @ 10V	32 @ 10V
Vgs (Max) (±V)	±25	±30	±30	±30	±30
Ciss (Max) @ Vds (pF)	320 @ 100V	1600 @ 25V	1676 @ 25V	1400 @ 25V	1610 @ 25V
Power Dissipation (Max) (W)	60	250	240	170	200
Operating Temperature (TJ) (°C)	150	-55 ~ 150	-55 ~ 150	-55 ~ 150	-55 ~ 150
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Not For New Designs	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IRFB9N60APBF

The IRFB9N60APBF from Vishay Siliconix is the closest electrical equivalent to the STP9N60M2. Both devices share identical gate threshold voltage specifications (4V @ 250µA) and matching drain-source voltage ratings (600V). The IRFB9N60APBF provides 9.2A continuous drain current, exceeding the STP9N60M2 specification of 5.5A. Product status is Active, ensuring long-term availability. RoHS3 compliance is confirmed. This device is suitable for direct substitution in applications where the STP9N60M2 is specified.

Secondary Substitute: IXFP10N60P

The IXFP10N60P from IXYS meets all mandatory electrical and mechanical compatibility criteria. This device provides 10A continuous drain current with 740mOhm on-resistance at 5A, 10V drive voltage. Product status is Active with confirmed RoHS3 compliance. The IXFP10N60P is suitable for applications requiring higher current capacity than the STP9N60M2.

Alternative Substitute: AOT10N60

The AOT10N60 from Alpha & Omega Semiconductor Inc. provides 10A continuous drain current and 250W power dissipation capability. All electrical parameters meet or exceed STP9N60M2 specifications. However, product status is listed as Not For New Designs, limiting suitability for new development projects. This device is acceptable for legacy system maintenance or replacement applications only.

Not Recommended: FDP12N60NZ

The FDP12N60NZ from onsemi is marked as Obsolete. While electrical parameters are compatible, obsolete status indicates discontinued manufacturing and limited future availability. This device should not be selected for new designs or long-term production applications.

Frequently Asked Questions (FAQ)

Q: Can the IRFB9N60APBF directly replace the STP9N60M2 in existing designs?

A: Yes. Both devices share identical gate threshold voltage (4V @ 250µA), matching drain-source voltage (600V), and compatible TO-220-3 packaging. The IRFB9N60APBF provides higher current capacity (9.2A vs. 5.5A), which is compatible with applications designed for the STP9N60M2. Pin configuration and electrical characteristics are compatible for direct substitution.

Q: What is the primary difference between the STP9N60M2 and its substitutes?

A: The STP9N60M2 is rated for 5.5A continuous drain current and 60W power dissipation. All listed substitutes provide equal or greater current capacity (9.2A to 12A) and higher power dissipation ratings (170W to 250W). These higher ratings do not prevent substitution; they indicate enhanced performance capability suitable for the same or more demanding applications.

Q: Why is the FDP12N60NZ marked as Obsolete?

A: Obsolete status indicates the manufacturer (onsemi) has discontinued production of this device. While the part may still be available from inventory, future procurement cannot be guaranteed. New designs should not incorporate obsolete components.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (AOT10N60, FDP12N60NZ, IRFB9N60APBF, IXFP10N60P) are confirmed RoHS3 compliant, matching the STP9N60M2 compliance status.

Q: What does "Not For New Designs" mean for the AOT10N60?

A: This status indicates the manufacturer (Alpha & Omega Semiconductor Inc.) is not recommending this device for new product development. The device may still be manufactured and available, but the manufacturer is directing customers toward alternative products. The AOT10N60 is acceptable for replacement or maintenance of existing systems only.

Q: How do gate charge differences affect substitution?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The STP9N60M2 has 10nC gate charge, while substitutes range from 32nC to 49nC. Higher gate charge requires more driver current but does not prevent substitution. Existing driver circuits designed for the STP9N60M2 will function with higher gate charge devices; switching speed may be slightly reduced depending on driver capability.

Q: Is the TO-220AB package variant compatible with TO-220-3 specifications?

A: Yes. The IRFB9N60APBF is supplied in TO-220AB packaging, which is mechanically and electrically compatible with TO-220-3 specifications. Both are three-terminal through-hole packages with identical pin configurations and thermal characteristics suitable for the same PCB layouts and heatsink mounting.

Q: Can substitutes be used in high-temperature applications?

A: All substitute parts are rated for operating temperatures up to 150°C junction temperature, matching the STP9N60M2 specification. The IRFB9N60APBF, IXFP10N60P, AOT10N60, and FDP12N60NZ all support the full -55°C to 150°C operating range, providing extended low-temperature capability beyond the STP9N60M2 specification.

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