STP95N3LLH6 Equivalent & Substitute Parts

Part Overview

The STP95N3LLH6 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 80A continuous drain current in a through-hole TO-220 package. This device is part of the DeepGATE™ and STripFET™ VI series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while conforming to the same through-hole TO-220 package form factor.

Substiute Parts

STP95N3LLH6
STMicroelectronicsIn Stock: 35143STP95N3LLH6 Datasheet
STP95N3LLH6
Current Part
FDP8030L
Fairchild SemiconductorIn Stock: 1699FDP8030L Datasheet
FDP8030L
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FDP8874
onsemiIn Stock: 15188FDP8874 Datasheet
FDP8874
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IPP034N03LGXKSA1
Infineon TechnologiesIn Stock: 973IPP034N03LGXKSA1 Datasheet
IPP034N03LGXKSA1
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IPP055N03LGXKSA1
Infineon TechnologiesIn Stock: 6944IPP055N03LGXKSA1 Datasheet
IPP055N03LGXKSA1
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PSMN4R3-30PL,127
Nexperia USA Inc.In Stock: 5627PSMN4R3-30PL,127 Datasheet
PSMN4R3-30PL,127
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 80 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 4.7 mOhm @ 40A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 2.5 V @ 250µA
Gate Charge (Qg Max) @ Vgs 20 nC @ 4.5V
Input Capacitance (Ciss Max) @ Vds 2200 pF @ 25V
Power Dissipation (Max) 70 W (Tc)
Operating Temperature (TJ) 175 °C
Package Type TO-220-3 Through Hole
FET Type N-Channel MOSFET

Substitute Part Grouping Explanation

Substitute parts for the STP95N3LLH6 are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Matching Parameters:

  • Drain to Source Voltage (Vdss): 30V
  • FET Type: N-Channel MOSFET
  • Package: TO-220 through-hole configuration
  • Gate Voltage Range (Vgs Max): ±20V

Current Handling Compatibility: Substitutes are grouped by continuous drain current rating at 25°C. The primary part specifies 80A (Tc). Substitutes with 80A or higher ratings provide direct replacement capability. Parts with lower current ratings (50A, 16A) are listed as alternatives for applications with reduced current requirements but are not full equivalents.

Thermal and Switching Characteristics: On-state resistance (Rds On), gate charge (Qg), and input capacitance (Ciss) vary among substitutes. These parameters affect switching speed, power dissipation, and thermal performance. Substitutes with lower Rds On values provide improved efficiency; higher gate charge values indicate slower switching characteristics.

Product Status Consideration: The primary part is obsolete. Active and "Not For New Designs" status parts are listed to provide viable alternatives for production continuity and new design initiatives.

Parameter Comparison

Parameter STP95N3LLH6 (Main) FDP8030L FDP8874 IPP034N03LGXKSA1 IPP055N03LGXKSA1 PSMN4R3-30PL,127
Manufacturer STMicroelectronics Fairchild Semiconductor onsemi Infineon Technologies Infineon Technologies Nexperia USA Inc.
Vdss (V) 30 30 30 30 30 30
Id @ 25°C (A) 80 (Tc) 80 (Ta) 16 (Ta) / 114 (Tc) 80 (Tc) 50 (Tc) 100 (Tc)
Rds On Max @ Id, Vgs (mOhm) 4.7 @ 40A, 10V 3.5 @ 80A, 10V 5.3 @ 40A, 10V 3.4 @ 30A, 10V 5.5 @ 30A, 10V 4.3 @ 15A, 10V
Vgs(th) Max @ Id (V) 2.5 @ 250µA 2.0 @ 250µA 2.5 @ 250µA 2.2 @ 250µA 2.2 @ 250µA 2.15 @ 1mA
Qg Max @ Vgs (nC) 20 @ 4.5V 170 @ 5V 72 @ 10V 51 @ 10V 31 @ 10V 41.5 @ 10V
Ciss Max @ Vds (pF) 2200 @ 25V 10500 @ 15V 3130 @ 15V 5300 @ 15V 3200 @ 15V 2400 @ 12V
Power Dissipation Max (W) 70 (Tc) 187 (Tc) 110 (Tc) 94 (Tc) 68 (Tc) 103 (Tc)
Operating Temperature (°C) 175 -65 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Obsolete Not For New Designs Not For New Designs Obsolete
RoHS3 Compliant Yes Not specified Yes Yes Yes Yes

Engineering Selection Recommendations

Primary Substitute: FDP8030L (Fairchild Semiconductor)

The FDP8030L is the recommended primary substitute for the STP95N3LLH6. It maintains identical voltage and current ratings (30V, 80A) and is currently in active production status. The FDP8030L demonstrates superior on-state resistance (3.5 mOhm vs. 4.7 mOhm), resulting in lower power dissipation and improved thermal efficiency. Its higher power dissipation rating (187W vs. 70W) provides additional thermal margin. The device is RoHS3 compliant and maintains full TO-220-3 package compatibility. Extended operating temperature range (-65°C to 175°C) offers broader environmental applicability.

Secondary Substitute: IPP034N03LGXKSA1 (Infineon Technologies)

The IPP034N03LGXKSA1 provides equivalent 80A current handling at 30V with superior on-state resistance (3.4 mOhm). This part is classified as "Not For New Designs" but remains available for production continuity. The OptiMOS™ series technology delivers lower gate charge (51 nC) compared to the main part (20 nC), enabling faster switching characteristics. RoHS3 compliance and full TO-220-3 compatibility are confirmed.

Alternative Substitute: PSMN4R3-30PL,127 (Nexperia USA Inc.)

The PSMN4R3-30PL,127 offers higher current capacity (100A vs. 80A) at identical 30V rating, providing design margin for current-limited applications. On-state resistance of 4.3 mOhm is comparable to the main part. This device is obsolete but maintains RoHS3 compliance and TO-220-3 package compatibility. The higher current rating accommodates applications requiring increased current headroom.

Lower Current Alternative: IPP055N03LGXKSA1 (Infineon Technologies)

The IPP055N03LGXKSA1 is suitable for applications requiring reduced current handling (50A vs. 80A). This part is not a full equivalent but serves applications with lower current demands. It maintains 30V voltage rating and TO-220-3 package compatibility. The lower power dissipation rating (68W) reflects its reduced current capacity.

Not Recommended: FDP8874 (onsemi)

The FDP8874 exhibits significantly reduced continuous drain current at ambient temperature (16A Ta vs. 80A Tc) and is classified as obsolete. While it maintains 30V voltage rating and TO-220-3 package compatibility, the current rating mismatch makes it unsuitable as a direct substitute for the STP95N3LLH6.

Frequently Asked Questions (FAQ)

Q: Can the FDP8030L directly replace the STP95N3LLH6 in existing designs?

A: Yes. The FDP8030L maintains identical voltage (30V) and current (80A) ratings, uses the same TO-220-3 package, and operates within the same temperature range. The improved on-state resistance (3.5 mOhm vs. 4.7 mOhm) provides enhanced performance. No circuit modifications are required for direct substitution.

Q: What is the difference between continuous drain current specified as (Ta) versus (Tc)?

A: (Ta) denotes current rating at ambient temperature, while (Tc) denotes current rating at case temperature. The STP95N3LLH6 specifies 80A (Tc), indicating this rating is measured at the device case. The FDP8030L specifies 80A (Ta), measured at ambient temperature. Both represent equivalent current handling capacity under their respective measurement conditions.

Q: Why does the IPP034N03LGXKSA1 have lower gate charge than the STP95N3LLH6?

A: Gate charge (Qg) is measured at different gate voltage levels. The STP95N3LLH6 specifies 20 nC @ 4.5V, while the IPP034N03LGXKSA1 specifies 51 nC @ 10V. The measurement conditions differ, making direct comparison of absolute values invalid. Both devices are compatible for switching applications within their specified gate voltage ranges.

Q: Is the PSMN4R3-30PL,127 suitable for applications requiring exactly 80A?

A: Yes. The PSMN4R3-30PL,127 is rated for 100A continuous drain current at 30V, exceeding the 80A requirement of the STP95N3LLH6. This higher rating provides design margin and thermal headroom. The device is fully compatible with applications designed for 80A operation.

Q: What is the significance of the "Not For New Designs" status for IPP034N03LGXKSA1 and IPP055N03LGXKSA1?

A: "Not For New Designs" indicates that Infineon Technologies does not recommend these parts for new circuit designs but continues to support existing production. These parts remain available for production continuity and maintenance of existing equipment. For new designs, the active-status FDP8030L is the preferred choice.

Q: Are all substitute parts RoHS3 compliant?

A: The STP95N3LLH6, FDP8874, IPP034N03LGXKSA1, IPP055N03LGXKSA1, and PSMN4R3-30PL,127 are confirmed RoHS3 compliant. The FDP8030L compliance status is not specified in the provided data. Verification with the manufacturer is recommended if RoHS3 compliance is a design requirement.

Q: Can the IPP055N03LGXKSA1 (50A) be used in place of the STP95N3LLH6 (80A)?

A: The IPP055N03LGXKSA1 is not a direct substitute due to reduced current capacity (50A vs. 80A). It is suitable only for applications with maximum current requirements of 50A or less. Using this part in an 80A-rated circuit would exceed its continuous current specification and result in thermal stress and potential device failure.

Q: What packaging format is used for all substitute parts?

A: All substitute parts use the TO-220-3 through-hole package, identical to the STP95N3LLH6. This ensures mechanical and thermal compatibility with existing PCB layouts and heat sink mounting arrangements. No mechanical redesign is required for substitution.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) affects gate drive requirements and switching speed. The STP95N3LLH6 specifies 2200 pF @ 25V, while substitutes range from 2400 pF to 10500 pF. Higher capacitance requires greater gate charge and may slow switching transitions. The FDP8030L (10500 pF) has significantly higher capacitance, potentially requiring gate driver optimization in high-frequency switching applications.

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