STP90N6F6 Equivalent & Substitute Parts

Part Overview

The STP90N6F6 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage and 84A continuous drain current in a Through Hole TO-220 package. This device is part of the DeepGATE™ and STripFET™ VI series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for new designs and ongoing production requirements. The following substitute parts maintain electrical compatibility within specified parameter ranges while offering active product status or improved availability.

Substiute Parts

STP90N6F6
STMicroelectronicsIn Stock: 1281STP90N6F6 Datasheet
STP90N6F6
Current Part
STP100N6F7
STMicroelectronicsIn Stock: 2187STP100N6F7 Datasheet
STP100N6F7
Similar
AUIRF3205Z
Infineon TechnologiesIn Stock: 58123AUIRF3205Z Datasheet
AUIRF3205Z
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IXTP120N075T2
IXYSIn Stock: 862IXTP120N075T2 Datasheet
IXTP120N075T2
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 84 A
RDS(on) Max @ Id, Vgs 6.8 mOhm @ 38.5A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) Max @ Id 4 V @ 250µA
Gate Charge (Qg) Max @ Vgs 74.9 nC @ 10V
Power Dissipation Max (Tc) 136 W
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the STP90N6F6 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss) rating must equal or exceed 60V
  • Continuous Drain Current (Id) must equal or exceed 84A at 25°C
  • RDS(on) characteristics must support equivalent or lower on-state resistance
  • Gate threshold voltage (Vgs(th)) must remain within ±20V maximum gate voltage specification
  • Package type must be Through Hole TO-220 or TO-220-3 configuration
  • RoHS3 compliance and REACH unaffected status required

Substitute Parts Identified:

  1. STP100N6F7 (STMicroelectronics) – Higher current rating (100A), lower RDS(on), active product status
  2. AUIRF3205Z (Infineon Technologies) – Comparable current rating (75A), higher power dissipation capability, HEXFET® series
  3. IXTP120N075T2 (IXYS) – Higher voltage rating (75V), higher current rating (120A), TrenchT2™ technology

All substitute parts maintain N-Channel MOSFET topology, Through Hole mounting, and compliance certifications equivalent to the original device.

Parameter Comparison

Parameter STP90N6F6 STP100N6F7 AUIRF3205Z IXTP120N075T2
Manufacturer STMicroelectronics STMicroelectronics Infineon Technologies IXYS
Vdss (V) 60 60 55 75
Id @ 25°C (A) 84 100 75 120
RDS(on) Max (mOhm) 6.8 @ 38.5A, 10V 5.6 @ 50A, 10V 6.5 @ 66A, 10V 7.7 @ 60A, 10V
Vgs(th) Max @ Id (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA
Gate Charge Qg Max (nC) 74.9 @ 10V 30 @ 10V 110 @ 10V 78 @ 10V
Power Dissipation Max (W) 136 125 170 250
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

STP100N6F7 (STMicroelectronics)

This substitute provides direct compatibility with the STP90N6F6 within the same manufacturer family. The STP100N6F7 maintains identical Vdss (60V) and Vgs(th) specifications while offering higher continuous drain current (100A vs. 84A) and improved RDS(on) characteristics (5.6 mOhm vs. 6.8 mOhm). Active product status ensures long-term availability and supply chain continuity. Gate charge is significantly reduced (30 nC vs. 74.9 nC), resulting in faster switching performance. ROHS3 compliance and REACH unaffected status match the original device. This part is the preferred substitute for direct replacement in existing designs.

AUIRF3205Z (Infineon Technologies)

This substitute operates at a lower Vdss rating (55V vs. 60V) and reduced continuous drain current (75A vs. 84A), making it suitable only for applications with reduced voltage and current requirements. The AUIRF3205Z provides higher power dissipation capability (170W vs. 136W) and is classified as Not For New Designs. This part is appropriate for legacy system maintenance only when voltage and current margins permit.

IXTP120N075T2 (IXYS)

This substitute provides the highest performance envelope with elevated Vdss (75V), highest continuous drain current (120A), and maximum power dissipation (250W). The IXTP120N075T2 is suitable for applications requiring higher voltage headroom and current capacity. Active product status ensures availability. This part is appropriate for new designs requiring enhanced performance specifications beyond the original STP90N6F6 ratings.

Frequently Asked Questions (FAQ)

Q: Can the STP100N6F7 directly replace the STP90N6F6 in existing circuits?

A: Yes. The STP100N6F7 maintains identical Vdss (60V) and Vgs(th) (4V @ 250µA) specifications. The improved RDS(on) (5.6 mOhm vs. 6.8 mOhm) and higher current rating (100A vs. 84A) provide enhanced performance without circuit modification. Both devices use TO-220-3 packaging and are pin-compatible.

Q: What is the voltage limitation when using AUIRF3205Z as a substitute?

A: The AUIRF3205Z has a Vdss rating of 55V, which is 5V lower than the STP90N6F6 (60V). This device is suitable only for applications operating at 55V or below. Applications requiring the full 60V rating must use STP100N6F7 or IXTP120N075T2.

Q: Why does the IXTP120N075T2 have higher gate charge than the STP90N6F6?

A: The IXTP120N075T2 operates at higher voltage (75V) and current (120A) ratings, resulting in larger die geometry and increased input capacitance. Gate charge of 78 nC (vs. 74.9 nC) reflects this higher performance envelope. The STP100N6F7 offers reduced gate charge (30 nC) due to optimized die design within the same voltage class.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (STP100N6F7, AUIRF3205Z, IXTP120N075T2) are ROHS3 compliant and REACH unaffected, matching the compliance status of the original STP90N6F6.

Q: Which substitute is recommended for new product designs?

A: The STP100N6F7 is the primary recommendation for new designs. It maintains identical voltage specifications, offers active product status, improved RDS(on) performance, and reduced gate charge. The IXTP120N075T2 is an alternative for applications requiring higher voltage or current margins.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts operate across the temperature range of -55°C to 175°C (TJ), matching the original STP90N6F6 specification.

Q: Can AUIRF3205Z be used in new designs?

A: No. The AUIRF3205Z is classified as Not For New Designs. This part is suitable only for maintenance and repair of existing systems where voltage and current requirements do not exceed 55V and 75A respectively.

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