STP90N55F4 Equivalent & Substitute Parts

Part Overview

The STP90N55F4 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 55V drain-to-source voltage and 90A continuous drain current in a TO-220 through-hole package. This device is part of the DeepGATE™ and STripFET™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility within the specified voltage, current, and thermal parameters while accommodating the through-hole TO-220 package form factor.

Key Parameters

Parameter	STP90N55F4 Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	90	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	8	mOhm @ 45A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	90	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	4800	pF @ 25V
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP90N55F4 is determined by the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): Substitute devices must have a Vdss rating equal to or greater than 55V. Devices rated at 60V or 75V are acceptable as they provide equivalent or enhanced voltage margin.

Continuous Drain Current (Id): Substitute devices must support a minimum continuous drain current of 90A at 25°C (Tc). Devices rated at 75A or higher satisfy this requirement, though lower-rated devices (55A, 9A Ta / 55A Tc) are included for reference but do not fully meet the current specification.

On-State Resistance (Rds On): The maximum on-state resistance specification of 8 mOhm at specified conditions is a key performance metric. Substitute devices with comparable or lower Rds On values maintain thermal and efficiency characteristics.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters affect switching speed and gate drive requirements. Substitutes with similar or lower values ensure compatible gate drive circuits.

Package and Mounting: All substitutes must use through-hole TO-220 or TO-220-3 packaging to maintain mechanical compatibility with existing PCB layouts.

Compliance and Status: Substitute devices must be RoHS3 compliant and preferably active or not-for-new-designs status to ensure supply chain availability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A Tc)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Power Diss. (W Tc)	Package	Status
STP90N55F4	STMicroelectronics	55	90	8 @ 45A, 10V	90 @ 10V	4800 @ 25V	150	TO-220-3	Obsolete
IRF1010EZPBF	Infineon Technologies	60	75	8.5 @ 51A, 10V	86 @ 10V	2810 @ 25V	140	TO-220-3	Active
AUIRF3205	International Rectifier	55	75	8 @ 62A, 10V	146 @ 10V	3247 @ 25V	200	TO-220-3	Active
AUIRF3205Z	Infineon Technologies	55	75	6.5 @ 66A, 10V	110 @ 10V	3450 @ 25V	170	TO-220-3	Not For New Designs
AUIRF3305	Infineon Technologies	55	140	8 @ 75A, 10V	150 @ 10V	3650 @ 25V	330	TO-220-3	Obsolete
HUF75344P3	onsemi	55	75	8 @ 75A, 10V	210 @ 20V	3200 @ 25V	285	TO-220-3	Active
HUF75345P3	onsemi	55	75	7 @ 75A, 10V	275 @ 20V	4000 @ 25V	325	TO-220-3	Active
IPP80N06S207AKSA1	Infineon Technologies	55	80	6.6 @ 68A, 10V	110 @ 10V	3400 @ 25V	250	TO-220-3	Discontinued at DiGi Electronics
DMNH6008SCTQ	Diodes Incorporated	60	130	8 @ 20A, 10V	21 @ 10V	2596 @ 30V	210	TO-220-3	Active
AOT2610L	Alpha & Omega Semiconductor Inc.	60	55 (Tc)	10.7 @ 20A, 10V	30 @ 10V	2007 @ 30V	75 (Tc)	TO-220-3	Active
AOT470	Alpha & Omega Semiconductor Inc.	75	100	10.5 @ 30A, 10V	136 @ 10V	5640 @ 30V	268 (Tc)	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compatibility):

The AUIRF3205 and HUF75344P3 are recommended as primary substitutes. Both devices maintain the 55V Vdss rating of the original STP90N55F4, feature active product status, and are RoHS3 compliant. The AUIRF3205 delivers 75A continuous drain current with 8 mOhm on-state resistance and 200W power dissipation. The HUF75345P3 offers superior thermal performance at 325W power dissipation with 7 mOhm on-state resistance, making it suitable for applications requiring enhanced thermal margin.

Secondary Substitutes (Voltage Upgrade, Higher Current Capability):

The IRF1010EZPBF and DMNH6008SCTQ provide 60V Vdss ratings with higher continuous drain current ratings (75A and 130A respectively). These devices are suitable for applications where voltage headroom can be increased. The DMNH6008SCTQ includes AEC-Q101 automotive qualification, making it appropriate for automotive-grade applications. Both devices are RoHS3 compliant and active.

Alternative Substitutes (Higher Voltage Rating):

The AOT470 operates at 75V Vdss with 100A continuous drain current and 268W power dissipation. This device is appropriate for applications requiring higher voltage margin and is RoHS3 compliant with active status.

Devices Not Recommended for New Designs:

The AUIRF3205Z carries "Not For New Designs" status and should be avoided for new product development. The AUIRF3305 is obsolete and should not be selected for new applications. The IPP80N06S207AKSA1 is discontinued at major distributors and presents supply chain risk.

Frequently Asked Questions (FAQ)

Q: Can the STP90N55F4 be directly replaced with a lower-current device such as the AOT2610L (55A Tc)?

A: The AOT2610L is not a direct replacement for the STP90N55F4 in applications requiring the full 90A continuous drain current specification. The AOT2610L is rated for 55A (Tc), which falls short of the original device's 90A rating. However, it may be suitable for applications with reduced current requirements or as a partial substitute in designs with current derating.

Q: What is the significance of the Vdss voltage rating difference between the STP90N55F4 (55V) and substitute devices rated at 60V or 75V?

A: Substitute devices with higher Vdss ratings (60V or 75V) provide additional voltage margin and are electrically compatible with 55V applications. The higher voltage rating does not degrade performance in 55V circuits; it only increases the maximum safe operating voltage. Devices such as the IRF1010EZPBF (60V) and AOT470 (75V) are suitable for direct substitution in this regard.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference are RoHS3 compliant, matching the compliance status of the original STP90N55F4. This ensures regulatory compatibility for applications subject to RoHS3 requirements.

Q: How does on-state resistance (Rds On) affect device selection?

A: On-state resistance directly impacts power dissipation and thermal performance. The STP90N55F4 specifies 8 mOhm at 45A and 10V. Substitute devices with equal or lower Rds On values (such as AUIRF3205Z at 6.5 mOhm or HUF75345P3 at 7 mOhm) provide improved efficiency and reduced heat generation. Devices with higher Rds On values (such as AOT2610L at 10.7 mOhm) generate more heat and may require thermal design adjustments.

Q: What is the impact of gate charge (Qg) differences on circuit design?

A: Gate charge affects the energy required to switch the MOSFET and the gate drive circuit design. The STP90N55F4 specifies 90 nC at 10V. Substitute devices with lower gate charge (such as DMNH6008SCTQ at 21 nC or AOT2610L at 30 nC) require less gate drive energy and enable faster switching. Devices with higher gate charge (such as HUF75345P3 at 275 nC) may require more robust gate drive circuits but do not prevent substitution.

Q: Is the TO-220-3 package interchangeable across all listed substitutes?

A: Yes, all substitute devices listed use the TO-220-3 through-hole package, ensuring mechanical and pin compatibility with existing PCB layouts. No PCB redesign is required for package accommodation.

Q: Which substitute offers the best thermal performance for high-power applications?

A: The HUF75345P3 offers the highest power dissipation rating at 325W (Tc), followed by the AUIRF3305 at 330W (Tc). However, the AUIRF3305 is obsolete. For active devices, the HUF75345P3 is the preferred choice for applications requiring maximum thermal headroom. The AOT470 also provides substantial thermal performance at 268W (Tc).

Q: Can the STP90N55F4 be replaced in automotive applications?

A: The DMNH6008SCTQ is qualified to AEC-Q101 automotive standards and is suitable for automotive applications. Other substitutes listed do not carry explicit automotive qualification and should be evaluated against specific automotive requirements before selection.

Q: What is the difference between devices marked as "Obsolete" versus "Not For New Designs"?

A: Devices marked as "Obsolete" (such as STP90N55F4 and AUIRF3305) are no longer manufactured and have limited or no inventory availability. Devices marked as "Not For New Designs" (such as AUIRF3205Z) are still manufactured but are being phased out; they should not be selected for new product development but may be acceptable for legacy product support. Active devices are the preferred choice for all new designs.

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