STP90N4F3 N-Channel MOSFET 40V 80A TO-220 Equivalent & Substitute Parts

Part Overview

The STP90N4F3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 40V drain-to-source voltage and 80A continuous drain current in the TO-220 package. This device is part of the STripFET™ III series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole TO-220 mounting standard.

Key Parameters

Parameter	STP90N4F3 Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-Resistance (Rds On) @ 40A, 10V	6.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	54	nC
Power Dissipation (Max)	110	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP90N4F3 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
Continuous Drain Current (Id): Must equal or exceed 80A at Tc
Mounting Type: Through Hole TO-220 package required
Gate Drive Voltage: Compatible with 10V drive specification
Operating Temperature Range: Must support -55°C to 175°C minimum
RoHS Compliance: ROHS3 Compliant status required

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower values indicate improved performance; values within ±20% of 6.5mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values up to 130nC are acceptable
Power Dissipation: Must support minimum 110W thermal capability
Gate Threshold Voltage (Vgs(th)): Must be compatible with standard gate drive circuits

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with active product status) and Compatible Alternatives (meeting electrical requirements with potential trade-offs in secondary parameters or product status).

Parameter Comparison

Parameter	STP90N4F3	IPP041N04NGXKSA1	CSD18504KCS	IRL1004PBF	IRF3205ZPBF	PSMN2R2-40PS,127
Manufacturer	STMicroelectronics	Infineon	Texas Instruments	Infineon	Infineon	Nexperia USA Inc.
Vdss (V)	40	40	40	40	55	40
Id @ 25°C (A)	80 (Tc)	80 (Tc)	100 (Tc)	130 (Tc)	75 (Tc)	100 (Tc)
Rds On @ 10V (mOhm)	6.5 @ 40A	4.1 @ 80A	7 @ 40A	6.5 @ 78A	6.5 @ 66A	2.1 @ 25A
Vgs(th) @ 250µA (V)	4	4	2.3	1	4	4
Qg @ 10V (nC)	54	56	25	100	110	130
Power Dissipation (W)	110 (Tc)	94 (Tc)	115 (Tc)	200 (Tc)	170 (Tc)	306 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitute: IPP041N04NGXKSA1

The IPP041N04NGXKSA1 (Infineon OptiMOS™ series) is the optimal substitute for the STP90N4F3. This device matches the critical electrical specifications: 40V Vdss, 80A continuous drain current at Tc, and TO-220-3 package. The part carries Active product status, ensuring long-term availability and supply chain stability. It is ROHS3 Compliant and REACH Unaffected, meeting all regulatory requirements. The on-resistance of 4.1mOhm at 80A, 10V is superior to the original part, providing improved thermal performance. Gate charge of 56nC closely matches the original 54nC specification. Operating temperature range of -55°C to 175°C fully supports the original application envelope.

Secondary Substitute: CSD18504KCS

The CSD18504KCS (Texas Instruments NexFET™ series) provides an alternative with 40V Vdss and 100A continuous drain current at Tc, exceeding the original current rating. This part is Active and ROHS3 Compliant. The on-resistance of 7mOhm at 40A, 10V is comparable to the original specification. Gate charge of 25nC is significantly lower, reducing switching losses. Operating temperature range extends to -55°C to 150°C, which is 25°C lower than the original maximum. This part is suitable for applications not requiring the full 175°C upper temperature limit.

Alternative Substitute: IRL1004PBF

The IRL1004PBF (Infineon HEXFET® series) offers 40V Vdss with 130A continuous drain current at Tc, providing substantial current margin. This part is Active and ROHS3 Compliant. Power dissipation capability of 200W exceeds the original 110W specification. On-resistance of 6.5mOhm at 78A, 10V matches the original part. Gate threshold voltage of 1V is significantly lower than the original 4V, requiring verification of gate drive circuit compatibility. This part is suitable for applications requiring higher current capacity or thermal headroom.

Not Recommended: IRF3205ZPBF

The IRF3205ZPBF has a Vdss rating of 55V, exceeding the 40V requirement. While this provides voltage margin, it introduces unnecessary cost and may not be optimal for 40V-rated applications. Current rating of 75A is below the 80A requirement of the original part.

Not Recommended: PSMN2R2-40PS,127

This part is classified as Obsolete, which does not resolve the supply chain issue presented by the STP90N4F3 obsolescence. Although electrical specifications are superior, the obsolete status makes it unsuitable for new designs or long-term production.

Frequently Asked Questions (FAQ)

Q: Can the IPP041N04NGXKSA1 be used as a direct drop-in replacement for the STP90N4F3?

A: Yes. Both devices share identical Vdss (40V), Id (80A at Tc), and TO-220-3 package specifications. Gate drive voltage compatibility is confirmed at 10V. Pinout and mounting are identical. No circuit modifications are required.

Q: What is the significance of the lower gate charge (Qg) in the CSD18504KCS compared to the STP90N4F3?

A: Lower gate charge reduces the energy required to switch the transistor on and off, resulting in lower switching losses and reduced heat generation. This improves efficiency in high-frequency switching applications. The CSD18504KCS at 25nC versus the original 54nC represents approximately 54% reduction in gate charge.

Q: Why does the IRL1004PBF have a gate threshold voltage of 1V when the STP90N4F3 specifies 4V?

A: Gate threshold voltage (Vgs(th)) is the gate-source voltage at which the transistor begins to conduct at a specified drain current (typically 250µA or 1mA). Lower threshold voltage means the transistor turns on at lower gate voltages. The IRL1004PBF requires verification that the gate drive circuit can reliably operate at the lower threshold. Most standard gate drivers operating at 10V will function correctly with both specifications.

Q: Is the operating temperature range difference between CSD18504KCS (-55°C to 150°C) and STP90N4F3 (-55°C to 175°C) significant?

A: The CSD18504KCS maximum junction temperature is 25°C lower than the original part. For applications operating near 175°C, this part is not suitable. For typical industrial applications operating below 150°C, this difference is not significant. Verify the maximum operating temperature requirement of your application before selection.

Q: What does "Active" product status mean compared to "Obsolete"?

A: Active status indicates the manufacturer continues production and supports the part for new designs. Obsolete status indicates the manufacturer has discontinued production and may not accept new orders. For new designs and long-term production, Active status parts are required to ensure supply chain continuity.

Q: Are all substitute parts ROHS3 Compliant?

A: Yes. All recommended substitute parts listed carry ROHS3 Compliant status, meeting the Restriction of Hazardous Substances Directive requirements. This ensures compatibility with environmental regulations and customer requirements.

Q: Can I use the IRF3205ZPBF in a 40V application even though it is rated for 55V?

A: Yes, the IRF3205ZPBF can be used in 40V applications. The 55V Vdss rating indicates the maximum voltage the device can withstand; it operates safely at lower voltages. However, the 75A current rating is below the 80A requirement of the STP90N4F3, making it unsuitable as a direct replacement for applications requiring the full 80A capacity.

Q: What is the difference between Tc and Ta current ratings?

A: Tc (case temperature) and Ta (ambient temperature) represent different measurement conditions. Tc ratings assume the case is maintained at 25°C and represent the device's maximum current capability under ideal thermal conditions. Ta ratings assume ambient air temperature of 25°C and represent practical current capability considering thermal resistance to ambient. Tc ratings are typically higher and represent the device's true capability when properly cooled.

Q: Is the TO-220-3 package identical across all substitute parts?

A: Yes. All substitute parts use the TO-220-3 package, which is a standardized three-lead through-hole package. Pinout is identical: Gate (pin 1), Drain (pin 2), and Source (pin 3). PCB layouts and heatsink mounting are directly compatible.

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