STP8NS25FP MOSFET N-Channel 250V 8A Equivalent & Substitute Parts

Part Overview

The STP8NS25FP is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 250V drain-to-source voltage with 8A continuous drain current in a Through Hole TO-220FP package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part operates at a maximum junction temperature of 150°C and dissipates up to 30W, suitable for general-purpose switching applications requiring moderate power handling in industrial and consumer electronics.

Substiute Parts

STP8NS25FP

STMicroelectronicsIn Stock: 3920STP8NS25FP Datasheet

Current PartRFQ

IRFI644GPBF

Vishay SiliconixIn Stock: 1719IRFI644GPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP8NS25FP is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 250V
• Continuous Drain Current (Id): Must equal or exceed 8A at 25°C
• Gate-Source Voltage (Vgs): Must support ±20V maximum rating
• Threshold Voltage (Vgs(th)): Must be compatible at specified test conditions
• On-State Resistance (Rds On): Must not exceed specified maximum values under rated conditions

Mechanical Equivalence Criteria:

• Mounting Type: Through Hole configuration required
• Package Type: TO-220-3 or TO-220FP compatible footprints
• Pin Configuration: Standard three-pin MOSFET layout (Gate, Drain, Source)

Compliance Criteria:

• RoHS3 Compliance: Required for environmental and regulatory alignment
• Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred for handling consistency

The IRFI644GPBF from Vishay Siliconix meets these substitution criteria through matching voltage ratings, compatible current specifications, identical gate-source voltage limits, and equivalent package configuration.

Parameter Comparison

Engineering Selection Recommendations

STP8NS25FP (STMicroelectronics): The STP8NS25FP is classified as obsolete. While 3821 units remain in stock, this part number is no longer in active production. Selection of this part is limited to applications requiring existing inventory or legacy system maintenance. RoHS3 compliance and MSL Level 1 rating support standard handling and environmental requirements.

IRFI644GPBF (Vishay Siliconix): The IRFI644GPBF is an active product offering superior electrical performance characteristics and extended temperature range (-55°C to 150°C versus 150°C maximum for the STP8NS25FP). The substitute part delivers lower on-state resistance (280 mOhm versus 450 mOhm), higher power dissipation capability (40W versus 30W), and maintains full electrical compatibility across voltage and current ratings. RoHS3 compliance and MSL Level 1 rating align with the original part specifications. The isolated tab variant of the TO-220-3 package provides enhanced thermal management options. Active product status ensures long-term availability and supply chain continuity.

For new designs and procurement of replacement components, the IRFI644GPBF is the appropriate selection due to active product status, improved thermal performance, and equivalent electrical specifications.

Frequently Asked Questions (FAQ)

Q: Can the IRFI644GPBF directly replace the STP8NS25FP in existing circuit designs?

A: Yes. Both devices are N-Channel MOSFETs with identical 250V drain-to-source voltage ratings, compatible continuous drain current specifications (8A versus 7.9A), matching gate-source voltage limits (±20V), and equivalent threshold voltage characteristics. The TO-220-3 package footprints are mechanically compatible. Pin configuration and functional operation are identical.

Q: What are the key electrical differences between these two parts?

A: The IRFI644GPBF exhibits lower on-state resistance (280 mOhm at 4.7A, 10V versus 450 mOhm at 4A, 10V), higher power dissipation capability (40W versus 30W), and higher input capacitance (1300 pF versus 770 pF). Gate charge is slightly higher (68 nC versus 51.8 nC). These differences result in improved thermal performance and lower conduction losses in the substitute part.

Q: Are there package compatibility considerations?

A: Both parts use Through Hole TO-220-3 packages. The IRFI644GPBF features an isolated tab variant, which provides improved thermal isolation compared to standard configurations. Standard PCB layouts designed for TO-220-3 packages accommodate both devices without modification.

Q: What is the significance of the obsolete product status for the STP8NS25FP?

A: Obsolete status indicates that STMicroelectronics has discontinued production of the STP8NS25FP. While 3821 units are currently in stock, future availability is not guaranteed. For new designs and long-term applications, selection of the active IRFI644GPBF ensures supply chain continuity and access to manufacturer support.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the STP8NS25FP and IRFI644GPBF are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity ratings. Both are REACH unaffected and classified under ECCN EAR99 and HTSUS 8541.29.0095. Compliance profiles are equivalent.

Q: What is the operating temperature range difference?

A: The STP8NS25FP operates to a maximum junction temperature of 150°C. The IRFI644GPBF extends the operating range to -55°C to 150°C, providing broader environmental flexibility for applications requiring low-temperature operation or enhanced thermal margin.