STP8NM60N Equivalent & Substitute Parts

Part Overview

The STP8NM60N is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage and 7A continuous drain current in a TO-220 through-hole package. This device is part of the MDmesh™ II series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts maintain the same voltage and current ratings while offering improved availability and active manufacturer support.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7	A
On-State Resistance (Rds On Max) @ Id, Vgs	650 mOhm @ 3.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	19	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±25	V
Input Capacitance (Ciss Max) @ Vds	560	pF @ 50V
Power Dissipation (Max)	70	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP8NM60N is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 7A at 25°C
Package Type: Must be TO-220 through-hole configuration
Operating Temperature Range: Must span -55°C to 150°C minimum
RoHS Compliance: Must maintain ROHS3 compliance status

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation Rating: Equal or higher ratings provide thermal margin

Substitute parts are grouped into two categories: direct replacements with identical current ratings (7A) and upgraded alternatives with higher current ratings (10A) that maintain full backward compatibility while providing additional design margin.

Parameter Comparison

Parameter	STP8NM60N	STP10NM60N	FCP7N60	IXTP14N60PM	AOT10N60	AOT10N60L
Manufacturer	STMicroelectronics	STMicroelectronics	onsemi	IXYS	Alpha & Omega	Alpha & Omega
Vdss (V)	600	600	600	600	600	600
Id @ 25°C (A)	7	10	7	7	10	10
Rds On Max (mOhm)	650 @ 3.5A, 10V	550 @ 4A, 10V	600 @ 3.5A, 10V	550 @ 7A, 10V	750 @ 5A, 10V	750 @ 5A, 10V
Vgs(th) Max (V)	4 @ 250µA	4 @ 250µA	5 @ 250µA	5.5 @ 250µA	4.5 @ 250µA	4.5 @ 250µA
Qg Max (nC)	19 @ 10V	19 @ 10V	30 @ 10V	36 @ 10V	40 @ 10V	40 @ 10V
Vgs Max (V)	±25	±25	±30	±30	±30	±30
Ciss Max (pF)	560 @ 50V	540 @ 50V	920 @ 25V	2500 @ 25V	1600 @ 25V	1600 @ 25V
Power Dissipation Max (W)	70	70	83	75	250	250
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3 Isolated Tab	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Not For New Designs	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 - Recommended Substitutes (Active Product Status):

STP10NM60N (STMicroelectronics): This is the primary recommended substitute. It maintains the same manufacturer lineage (MDmesh™ II series), offers active product status, and provides improved electrical characteristics. The 10A rating provides 43% additional current capacity while maintaining identical voltage specifications and operating temperature range. On-state resistance is reduced to 550 mOhm, improving thermal efficiency. Gate charge remains at 19 nC, ensuring compatible switching performance. This part is available in higher inventory quantities (18,823 pcs) and is supplied in tube packaging.

IXTP14N60PM (IXYS): This part maintains the 7A current rating and 600V voltage specification, providing a direct functional equivalent. It features active product status and improved on-state resistance of 550 mOhm at full 7A rating. The isolated tab variant of the TO-220 package provides enhanced thermal isolation for applications requiring galvanic separation. Higher gate charge (36 nC) and input capacitance (2500 pF) may impact switching speed in high-frequency applications.

AOT10N60L (Alpha & Omega Semiconductor): This part offers active product status with 10A current rating and 600V voltage specification. It provides significantly higher power dissipation capability (250W vs. 70W), enabling thermal margin in demanding applications. The higher input capacitance (1600 pF) and gate charge (40 nC) require consideration in gate drive circuit design.

Tier 2 - Alternative Substitutes (Not For New Designs Status):

FCP7N60 (onsemi): This part matches the 7A current and 600V voltage ratings with improved on-state resistance (600 mOhm). Product status is "Not For New Designs," limiting its use to legacy system maintenance and existing production lines. Higher gate charge (30 nC) and input capacitance (920 pF) may affect switching characteristics.

AOT10N60 (Alpha & Omega Semiconductor): This part provides 10A current rating and 600V voltage specification with "Not For New Designs" status. It is suitable for existing production support but not recommended for new circuit designs.

Selection Criteria by Application:

For new designs requiring direct replacement with improved availability, select STP10NM60N. For applications requiring galvanic isolation in the power stage, select IXTP14N60PM. For thermal-intensive applications requiring maximum power dissipation margin, select AOT10N60L. For legacy system support where new designs are not planned, FCP7N60 and AOT10N60 remain viable options within their stated product lifecycle status.

Frequently Asked Questions (FAQ)

Q: Can STP10NM60N be used as a direct replacement for STP8NM60N?

A: Yes. STP10NM60N is a direct substitute with identical voltage rating (600V), higher current rating (10A vs. 7A), and compatible package (TO-220-3). The higher current rating provides design margin without requiring circuit modifications. Gate charge and switching characteristics remain compatible.

Q: What is the difference between the standard TO-220 and TO-220 Isolated Tab packages used in IXTP14N60PM?

A: The isolated tab variant (IXTP14N60PM) provides galvanic isolation between the drain tab and the mounting surface, preventing direct thermal and electrical coupling to the heatsink. Standard TO-220 packages (STP8NM60N, STP10NM60N, FCP7N60, AOT10N60, AOT10N60L) have the drain electrically connected to the tab. Selection depends on circuit topology and grounding requirements.

Q: Why do some substitutes have higher gate charge (Qg) values?

A: Gate charge affects switching speed and gate drive power requirements. Higher gate charge (40 nC in AOT10N60/AOT10N60L vs. 19 nC in STP8NM60N) requires stronger gate drive circuits and increases switching losses. For applications with limited gate drive capability, lower gate charge devices (STP10NM60N at 19 nC) are preferred.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance status, ensuring compatibility with environmental and regulatory requirements equivalent to the original STP8NM60N.

Q: What is the significance of product status (Active vs. Not For New Designs vs. Obsolete)?

A: Product status indicates manufacturer support and availability. Active status guarantees long-term availability and manufacturer support. "Not For New Designs" status indicates the part is available for existing production but not recommended for new circuit designs. Obsolete status (STP8NM60N) indicates the part is no longer manufactured and availability is limited to existing inventory.

Q: Can AOT10N60 and AOT10N60L be used interchangeably?

A: Both parts share identical electrical specifications (600V, 10A, 750 mOhm Rds On, 40 nC gate charge). The primary difference is product status: AOT10N60L is active, while AOT10N60 is "Not For New Designs." For new designs, AOT10N60L is the appropriate selection. For existing production support, either part is functionally equivalent.

Q: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance affects gate drive circuit design and switching speed. Higher Ciss values (2500 pF in IXTP14N60PM, 1600 pF in AOT10N60/AOT10N60L) require stronger gate drive circuits and increase switching losses. Lower Ciss values (540-560 pF in STP10NM60N and STP8NM60N) enable faster switching and reduce gate drive power requirements.

Q: What thermal considerations apply when upgrading from 7A to 10A rated devices?

A: Devices rated for 10A (STP10NM60N, AOT10N60, AOT10N60L) have lower on-state resistance, reducing conduction losses. However, higher current capability does not automatically reduce thermal stress. Actual junction temperature depends on circuit current, duty cycle, and heatsink design. The 10A-rated devices provide design margin for future current increases without requiring heatsink redesign.

Q: Are gate voltage ratings (Vgs Max) interchangeable across all substitutes?

A: No. STP8NM60N and STP10NM60N are rated for ±25V maximum gate voltage, while FCP7N60, IXTP14N60PM, AOT10N60, and AOT10N60L are rated for ±30V. Gate drive circuits must not exceed the specified maximum gate voltage. Devices rated for ±30V can safely operate with ±25V gate drive, but not vice versa.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message