STP8NM60FP Equivalent & Substitute Parts

Part Overview

The STP8NM60FP is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 8A continuous drain current at 25°C. This device is packaged in a TO-220FP through-hole configuration and is part of the MDmesh™ series. The part is classified as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain functional compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	8	A
Rds On (Max) @ Id, Vgs	1 Ohm @ 2.5A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Power Dissipation (Max)	30	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP8NM60FP is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must support the 650V drain-to-source voltage specification or higher. Parts rated below 650V are not suitable for direct substitution in applications requiring this voltage class.

Continuous Drain Current (Id): The substitute must deliver at least 8A continuous drain current at 25°C to maintain equivalent current-handling capability. Parts with lower current ratings reduce design margin.

On-State Resistance (Rds On): The substitute must maintain comparable on-state resistance to ensure similar power dissipation and thermal performance. Significantly higher Rds On values increase heat generation.

Mounting Configuration: All substitutes must be through-hole mounted devices in TO-220 package variants to ensure mechanical and electrical compatibility with existing PCB layouts.

Compliance and Status: Active product status and ROHS3 compliance are preferred for long-term availability and regulatory adherence.

The following substitute parts are grouped based on these criteria:

Group A (Closest Electrical Match): R6008FNX — Matches 8A current rating and 600V voltage class with comparable Rds On and power dissipation.

Group B (Voltage-Elevated Alternatives): IPA80R1K0CEXKSA2 — Exceeds voltage rating (800V) with reduced current (5.7A) but maintains active product status and superior thermal characteristics.

Group C (Reduced Current Alternatives): FQPF7N60, R6004ENX, R6004KNX, TK6A65D(STA4,Q,M) — Operate at reduced current ratings (4A to 6A) with voltage ratings between 600V and 650V, suitable for applications with lower current demands.

Parameter Comparison

Parameter	STP8NM60FP	R6008FNX	IPA80R1K0CEXKSA2	FQPF7N60	R6004ENX	R6004KNX	TK6A65D(STA4,Q,M)
Manufacturer	STMicroelectronics	Rohm Semiconductor	Infineon Technologies	onsemi	Rohm Semiconductor	Rohm Semiconductor	Toshiba Semiconductor
Vdss (V)	650	600	800	600	600	600	650
Id @ 25°C (A)	8	8	5.7	4.3	4	4	6
Rds On (Max) @ Vgs 10V (Ohm)	1 @ 2.5A	0.95 @ 4A	0.95 @ 3.6A	1 @ 2.2A	0.98 @ 1.5A	0.98 @ 1.5A	1.11 @ 3A
Vgs(th) (V)	5 @ 250µA	4 @ 1mA	3.9 @ 250µA	5 @ 250µA	4 @ 1mA	5 @ 1mA	4 @ 1mA
Gate Charge Qg (nC)	18 @ 10V	20 @ 10V	31 @ 10V	38 @ 10V	15 @ 10V	10.2 @ 10V	20 @ 10V
Power Dissipation (W)	30	50	32	48	40	40	45
Operating Temperature (°C)	-55 to 150	-55 to 150	-40 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220FP	TO-220FM	PG-TO220-FP	TO-220F-3	TO-220FM	TO-220FM	TO-220SIS
Product Status	Obsolete	Active	Active	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: R6008FNX

The R6008FNX from Rohm Semiconductor is the closest functional equivalent to the STP8NM60FP. It maintains the 8A continuous drain current specification and operates at 600V, which is within acceptable tolerance for most 650V-rated applications. The device is active in production, ensuring long-term availability. Rds On performance (0.95 Ohm @ 4A, 10V) is superior to the original part, resulting in lower power dissipation. The TO-220FM package is mechanically compatible with TO-220FP layouts. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) support regulatory and environmental requirements.

Secondary Substitute: IPA80R1K0CEXKSA2

The IPA80R1K0CEXKSA2 from Infineon Technologies offers elevated voltage rating (800V) with reduced continuous drain current (5.7A). This device is suitable for applications where voltage margin is critical or where current requirements are lower than the original 8A specification. Active product status and CoolMOS™ CE series technology provide advanced thermal and switching characteristics. The PG-TO220-FP package is mechanically compatible with standard TO-220 layouts. Operating temperature range is -40°C to 150°C, which is narrower than the original part's -55°C to 150°C range.

Tertiary Substitutes: R6004ENX, R6004KNX, FQPF7N60, TK6A65D(STA4,Q,M)

These parts are suitable for applications where continuous drain current requirements are 6A or lower. R6004ENX and R6004KNX both deliver 4A at 600V with active product status. FQPF7N60 provides 4.3A at 600V but is classified as obsolete. TK6A65D(STA4,Q,M) delivers 6A at 650V, matching the original voltage rating, with active product status. All four devices maintain ROHS3 compliance and through-hole mounting compatibility.

Voltage Consideration: Applications requiring strict 650V operation should prioritize STP8NM60FP, TK6A65D(STA4,Q,M), or IPA80R1K0CEXKSA2. The 600V-rated alternatives (R6008FNX, R6004ENX, R6004KNX, FQPF7N60) are acceptable for designs with 50V voltage margin.

Current Consideration: Applications requiring full 8A continuous drain current are limited to STP8NM60FP and R6008FNX. Reduced-current alternatives must be evaluated against actual circuit requirements.

Availability and Lifecycle: Active product status is confirmed for R6008FNX, IPA80R1K0CEXKSA2, R6004ENX, R6004KNX, and TK6A65D(STA4,Q,M). These parts are preferred for new designs and long-term procurement planning.

Frequently Asked Questions (FAQ)

Q: Can R6008FNX directly replace STP8NM60FP in all applications?

A: R6008FNX is functionally compatible for most applications. The 50V voltage reduction (600V vs. 650V) is acceptable in designs with adequate voltage margin. Verify that the application's maximum operating voltage does not exceed 600V. The superior Rds On performance (0.95 Ohm vs. 1 Ohm) reduces power dissipation, which is beneficial for thermal management.

Q: What is the impact of using IPA80R1K0CEXKSA2 with its reduced current rating of 5.7A?

A: IPA80R1K0CEXKSA2 is suitable only for applications where continuous drain current does not exceed 5.7A. If the circuit requires the full 8A capability of the original part, this substitute is not appropriate. The elevated 800V voltage rating provides additional design margin for high-voltage applications.

Q: Are all substitute parts available in the same package as STP8NM60FP?

A: All substitute parts are through-hole mounted in TO-220 package variants (TO-220FM, TO-220F-3, TO-220SIS, PG-TO220-FP). These packages are mechanically and electrically compatible with standard TO-220 PCB footprints. Minor package outline differences do not affect pin compatibility or thermal performance.

Q: Which substitute part has the best long-term availability?

A: R6008FNX, IPA80R1K0CEXKSA2, R6004ENX, R6004KNX, and TK6A65D(STA4,Q,M) are all classified as active products. These parts are preferred for new designs and procurement planning. FQPF7N60 is obsolete and should be avoided for new applications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) values range from 10.2 nC (R6004KNX) to 38 nC (FQPF7N60). Lower gate charge reduces switching losses and improves switching speed. Higher gate charge increases driver power requirements. Select a substitute based on the gate driver's current capability and the application's switching frequency requirements.

Q: What is the significance of Vgs(th) variations among substitute parts?

A: Gate threshold voltage (Vgs(th)) ranges from 3.9V (IPA80R1K0CEXKSA2) to 5V (STP8NM60FP, FQPF7N60, R6004KNX). Lower threshold voltages enable operation with lower gate drive voltages. Verify that the gate driver output voltage is sufficient to fully enhance the selected device. All listed parts operate with standard 10V gate drive voltage.

Q: Can substitute parts with lower power dissipation ratings be used?

A: Power dissipation ratings reflect thermal capability under specified conditions. Parts with higher power dissipation ratings (R6008FNX at 50W, FQPF7N60 at 48W) provide greater thermal margin. Parts with lower ratings (STP8NM60FP at 30W, IPA80R1K0CEXKSA2 at 32W) require careful thermal management. Select based on actual circuit power dissipation and thermal design requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts are ROHS3 compliant. This compliance status supports regulatory requirements for electronic equipment in regulated markets.

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