STP8NK80ZFP Equivalent & Substitute Parts

Part Overview

The STP8NK80ZFP is an N-channel MOSFET manufactured by STMicroelectronics, designed for high-voltage switching applications. This device operates at 800 V drain-to-source voltage with a continuous drain current of 6.2 A and is housed in a through-hole TO-220FP package. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across the critical operating parameters. The following alternatives provide functional equivalence for applications requiring N-channel 800 V MOSFETs in through-hole packaging.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
On-State Resistance (Rds On Max) @ 10V	1.5	Ohm @ 3.1A
Gate Threshold Voltage (Vgs th Max)	4.5	V @ 100µA
Gate Charge (Qg Max) @ 10V	46	nC
Power Dissipation (Max)	30	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-220FP
Package Type	TO-220-3	Full Pack

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 800 V to ensure safe operation in the intended application circuit.

Current Rating: Substitute parts must support continuous drain current at or above the 6.2 A specification to prevent thermal stress and component failure.

Package Compatibility: All substitute parts must use through-hole mounting in TO-220 family packaging to ensure mechanical and thermal interface compatibility with existing PCB designs.

Operating Temperature Range: Substitute parts must support the full operating temperature range of -55°C to 150°C (TJ) to maintain performance across environmental conditions.

Technology Type: All substitute parts are N-channel MOSFETs using metal-oxide semiconductor technology, ensuring functional equivalence in switching applications.

Drive Voltage: All substitute parts operate with a maximum gate-source voltage (Vgs Max) of ±30V or greater, ensuring compatibility with standard gate drive circuits.

The following parts meet these substitution criteria:

FQPF8N80CYDTU (Fairchild Semiconductor): Meets 800 V voltage rating with 8 A continuous drain current, exceeding the base specification. TO-220F-3 package with formed leads provides mechanical compatibility.

SPA06N80C3XKSA1 (Infineon Technologies): Meets 800 V voltage rating with 6 A continuous drain current, matching the base specification. PG-TO220-3-31 package provides direct mechanical compatibility.

TK5A65DA(STA4,Q,M) (Toshiba Semiconductor): Operates at 650 V drain-to-source voltage, which is below the 800 V requirement. This part does not meet the voltage substitution criterion and is not recommended for direct replacement in 800 V applications.

Parameter Comparison

Parameter	STP8NK80ZFP (Main)	FQPF8N80CYDTU	SPA06N80C3XKSA1	TK5A65DA(STA4,Q,M)
Manufacturer	STMicroelectronics	Fairchild Semiconductor	Infineon Technologies	Toshiba Semiconductor
Vdss (V)	800	800	800	650
Id @ 25°C (A)	6.2 (Tc)	8 (Tc)	6 (Tc)	4.5 (Ta)
Rds On Max @ 10V (Ohm)	1.5 @ 3.1A	1.55 @ 4A	0.9 @ 3.8A	1.67 @ 2.3A
Vgs th Max (V)	4.5 @ 100µA	5 @ 250µA	3.9 @ 250µA	4.4 @ 1mA
Qg Max @ 10V (nC)	46	45	41	16
Vgs Max (V)	±30	±30	±20	±30
Power Dissipation Max (W)	30 (Tc)	59 (Tc)	39 (Tc)	35 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220FP	TO-220F-3 (Y-Forming)	PG-TO220-3-31	TO-220SIS
RoHS3 Compliance	Yes	Not specified	Yes	Yes

Engineering Selection Recommendations

FQPF8N80CYDTU (Fairchild Semiconductor): This part is suitable for direct substitution in applications where the 800 V voltage rating and through-hole TO-220 package are required. The 8 A continuous drain current exceeds the base specification, providing additional current margin. The 59 W power dissipation rating is higher than the main part, indicating improved thermal performance. Product status is active. RoHS3 compliance status is not specified in the provided data.

SPA06N80C3XKSA1 (Infineon Technologies): This part provides direct electrical equivalence with 800 V voltage rating and 6 A continuous drain current matching the base specification. The on-state resistance of 0.9 Ohm is lower than the main part, resulting in reduced power dissipation and improved efficiency. The part is RoHS3 compliant with active product status. The PG-TO220-3-31 package is mechanically compatible with TO-220FP through-hole applications. Gate charge is lower at 41 nC, reducing switching losses.

TK5A65DA(STA4,Q,M) (Toshiba Semiconductor): This part does not meet the substitution criteria due to its 650 V drain-to-source voltage rating, which is insufficient for 800 V applications. This part is not recommended for direct replacement.

Frequently Asked Questions (FAQ)

Q: Can FQPF8N80CYDTU replace STP8NK80ZFP in all applications?

A: FQPF8N80CYDTU meets the critical substitution parameters of 800 V voltage rating, through-hole TO-220 package, and -55°C to 150°C operating temperature range. The higher 8 A current rating and 59 W power dissipation provide additional performance margin. Mechanical compatibility with TO-220FP footprints is maintained through the TO-220F-3 (Y-Forming) package configuration.

Q: What is the difference between SPA06N80C3XKSA1 and STP8NK80ZFP?

A: Both parts operate at 800 V with similar continuous drain current ratings (6 A vs. 6.2 A). The primary differences are manufacturer (Infineon vs. STMicroelectronics), on-state resistance (0.9 Ohm vs. 1.5 Ohm), and gate charge (41 nC vs. 46 nC). The lower on-state resistance of SPA06N80C3XKSA1 results in reduced power dissipation and improved switching efficiency. Both parts are RoHS3 compliant and support the full -55°C to 150°C operating temperature range.

Q: Why is TK5A65DA(STA4,Q,M) not recommended as a substitute?

A: TK5A65DA(STA4,Q,M) operates at 650 V drain-to-source voltage, which is 150 V below the 800 V requirement of STP8NK80ZFP. Using a lower voltage-rated device in an 800 V application creates risk of device failure and circuit malfunction. This part does not meet the voltage substitution criterion.

Q: Are there package compatibility concerns when substituting these parts?

A: All recommended substitute parts use through-hole TO-220 family packaging (TO-220F-3 or PG-TO220-3-31), which is mechanically compatible with TO-220FP footprints on PCBs. The TO-220F-3 (Y-Forming) variant of FQPF8N80CYDTU features formed leads that may require lead-forming adjustment during assembly. Standard TO-220 through-hole mounting procedures apply to all substitute parts.

Q: What is the impact of different on-state resistance values?

A: On-state resistance (Rds On) directly affects power dissipation during conduction. SPA06N80C3XKSA1 has 0.9 Ohm Rds On compared to 1.5 Ohm for STP8NK80ZFP, resulting in lower power loss and reduced thermal stress. FQPF8N80CYDTU has 1.55 Ohm Rds On, which is comparable to the main part. Lower Rds On values improve efficiency and reduce heat generation in switching applications.

Q: Do all substitute parts support the same gate drive voltage?

A: STP8NK80ZFP and FQPF8N80CYDTU both support ±30V gate-source voltage. SPA06N80C3XKSA1 supports ±20V, which is lower but still compatible with standard gate drive circuits operating at ±15V or lower. TK5A65DA(STA4,Q,M) supports ±30V. Verify gate drive circuit voltage compatibility before substitution.

Q: What certifications should be verified for compliance-critical applications?

A: STP8NK80ZFP and SPA06N80C3XKSA1 are both RoHS3 compliant. TK5A65DA(STA4,Q,M) is RoHS3 compliant. FQPF8N80CYDTU RoHS3 compliance status is not specified in the provided data. For applications requiring RoHS3 certification, SPA06N80C3XKSA1 provides confirmed compliance. All parts are classified as EAR99 for export control purposes.

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