STP80PF55 MOSFET P-Channel 55V 80A TO-220 Equivalent & Substitute Parts

Part Overview

The STP80PF55 is a P-Channel MOSFET manufactured by STMicroelectronics, rated for 55V drain-to-source voltage and 80A continuous drain current in a through-hole TO-220-3 package. This device is part of the STripFET™ II series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	55	V
Current - Continuous Drain (Id) @ 25°C	80	A (Tc)
Rds On (Max) @ Id, Vgs	18	mOhm @ 40A, 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STP80PF55 is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: P-Channel topology
Package / Case: TO-220-3 through-hole configuration
Drain to Source Voltage (Vdss): Minimum 55V rating required
Current - Continuous Drain (Id): Minimum 80A at 25°C (Tc) required
Operating Temperature Range: Minimum -55°C to 175°C (TJ) required
RoHS3 Compliance: Required for regulatory alignment

Secondary Compatibility Factors:

Rds On (Max): Lower or equivalent on-resistance preferred for thermal performance
Power Dissipation (Max): Equal or higher rating acceptable
Gate Charge (Qg): Lower values reduce switching losses
Vgs (Max): ±16V or higher acceptable

The substitute parts listed below meet or exceed the primary substitution criteria and maintain electrical and mechanical compatibility with the STP80PF55 in standard circuit applications.

Parameter Comparison

Parameter	STP80PF55 (Main)	SPP80P06PHXKSA1	SUP53P06-20-E3	Unit
Manufacturer	STMicroelectronics	Infineon Technologies	Vishay Siliconix	—
Product Status	Obsolete	Active	Active	—
FET Type	P-Channel	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	55	60	60	V
Current - Continuous Drain (Id) @ 25°C	80 (Tc)	80 (Tc)	53 (Tc)	A
Rds On (Max) @ Id, Vgs	18 @ 40A, 10V	23 @ 64A, 10V	19.5 @ 30A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	258 @ 10V	173 @ 10V	115 @ 10V	nC
Vgs (Max)	±16	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	5500 @ 25V	5033 @ 25V	3500 @ 25V	pF
Power Dissipation (Max)	300 (Tc)	340 (Tc)	104.2 (Tc)	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 150	°C (TJ)
Package / Case	TO-220-3	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	—

Engineering Selection Recommendations

SPP80P06PHXKSA1 (Infineon Technologies)

The SPP80P06PHXKSA1 is the primary substitute for the STP80PF55. This device is manufactured by Infineon Technologies and maintains active product status. It meets all primary substitution criteria: P-Channel topology, TO-220-3 package, 60V Vdss rating (exceeds 55V requirement), 80A continuous drain current (matches requirement), and -55°C to 175°C operating temperature range (matches requirement). The part is RoHS3 compliant and REACH unaffected. The SPP80P06PHXKSA1 exhibits lower gate charge (173 nC vs. 258 nC) and lower input capacitance (5033 pF vs. 5500 pF), resulting in improved switching performance. Higher Vdss rating (60V vs. 55V) provides additional voltage margin. The Rds On specification (23 mOhm @ 64A, 10V) is slightly higher than the main part but remains within acceptable thermal limits for equivalent applications.

SUP53P06-20-E3 (Vishay Siliconix)

The SUP53P06-20-E3 is a secondary substitute option from Vishay Siliconix with active product status. This device meets the package and topology requirements (P-Channel, TO-220-3) and exceeds voltage rating (60V vs. 55V). However, the continuous drain current rating is 53A (Tc), which is below the 80A requirement of the STP80PF55. This part is suitable only for applications where the actual circuit current demand does not exceed 53A. The SUP53P06-20-E3 offers superior switching characteristics with significantly lower gate charge (115 nC vs. 258 nC) and lower input capacitance (3500 pF vs. 5500 pF). Operating temperature range is -55°C to 150°C, which is 25°C lower than the main part at the upper limit. This device is recommended only when current requirements are confirmed below 53A.

Product Status Consideration

Both substitute parts are classified as active products, ensuring long-term availability and continued manufacturing support. The STP80PF55 obsolete status necessitates migration to one of these active alternatives for new designs and ongoing production.

Frequently Asked Questions (FAQ)

Q: Can the SPP80P06PHXKSA1 directly replace the STP80PF55 in all applications?

A: The SPP80P06PHXKSA1 is electrically and mechanically compatible with the STP80PF55 for applications requiring up to 80A continuous drain current. The higher Vdss rating (60V vs. 55V) and improved switching characteristics make it a direct substitute. No circuit modifications are required for standard applications.

Q: Why is the SUP53P06-20-E3 listed as a substitute if its current rating is lower?

A: The SUP53P06-20-E3 meets the core substitution criteria (P-Channel, TO-220-3 package, 60V Vdss, -55°C to 150°C operating range) and is suitable for applications where actual circuit current does not exceed 53A. It is not a universal substitute but is valid for current-limited designs. Circuit analysis is required to confirm compatibility.

Q: Are all substitute parts RoHS3 compliant?

A: The SPP80P06PHXKSA1 is explicitly RoHS3 compliant. The SUP53P06-20-E3 RoHS status is not specified in the provided data. Verification with the manufacturer is recommended if RoHS3 compliance is a design requirement.

Q: What is the impact of different Rds On values on circuit performance?

A: Rds On (on-resistance) directly affects power dissipation and thermal performance. The STP80PF55 has 18 mOhm @ 40A, 10V; the SPP80P06PHXKSA1 has 23 mOhm @ 64A, 10V; and the SUP53P06-20-E3 has 19.5 mOhm @ 30A, 10V. Higher Rds On increases heat generation. For equivalent current levels, the SUP53P06-20-E3 offers the lowest on-resistance, followed by the STP80PF55. Thermal analysis is recommended for high-current applications.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes. All substitute parts use the TO-220-3 through-hole package with identical pin configuration and mechanical dimensions. No PCB modifications are required. Thermal management considerations (heatsink design) may require review based on actual current and Rds On values in the specific application.

Q: What is the significance of gate charge differences?

A: Gate charge (Qg) determines the energy required to switch the FET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The SPP80P06PHXKSA1 (173 nC) and SUP53P06-20-E3 (115 nC) have significantly lower gate charge than the STP80PF55 (258 nC), resulting in improved efficiency in switching applications. This is a performance advantage, not a compatibility issue.

Q: Are there temperature range limitations with the SUP53P06-20-E3?

A: The SUP53P06-20-E3 has a maximum junction temperature of 150°C, compared to 175°C for the STP80PF55 and SPP80P06PHXKSA1. For applications operating near the upper temperature limit, the SPP80P06PHXKSA1 is the preferred substitute. The SUP53P06-20-E3 is suitable for applications with maximum junction temperatures below 150°C.

Q: What packaging format is used for these substitute parts?

A: The SPP80P06PHXKSA1 is supplied in tube packaging. The SUP53P06-20-E3 is also supplied in tube packaging. Both are through-hole components in TO-220-3 package format, identical to the STP80PF55 mechanical configuration.

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