STP80NF70 Equivalent & Substitute Parts

Part Overview

The STP80NF70 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 68V drain-to-source voltage with 98A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the STripFET™ II series. The STP80NF70 carries a product status of "Not For New Designs," indicating it is a legacy component. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	STP80NF70	Unit
Drain-to-Source Voltage (Vdss)	68	V
Continuous Drain Current (Id) @ 25°C	98	A (Tc)
On-State Resistance (Rds On) @ 40A, 10V	9.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	75	nC
Power Dissipation (Max)	190	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP80NF70 is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must equal or exceed 68V to maintain circuit voltage margin and reliability.

Continuous Drain Current (Id): Substitute parts must support at least 98A at 25°C to handle the design current load without thermal derating.

On-State Resistance (Rds On): Lower or comparable Rds On values ensure efficient switching and reduced power dissipation.

Gate Charge (Qg): Similar gate charge values maintain consistent gate drive requirements and switching speed characteristics.

Package and Mounting: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and thermal compatibility.

Operating Temperature Range: Substitutes must support the full -55°C to 175°C operating range.

Compliance: RoHS3 compliance and REACH unaffected status are required for regulatory alignment.

Substitute parts are grouped based on whether they meet these criteria within acceptable engineering tolerances. Parts with lower voltage ratings, reduced current capacity, or incompatible packages are listed but noted as limited substitutes.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Package	Product Status	RoHS Status
STP80NF70	STMicroelectronics	68	98 (Tc)	9.8 @ 40A, 10V	75 @ 10V	190 (Tc)	TO-220-3	Not For New Designs	ROHS3 Compliant
AOT470	Alpha & Omega Semiconductor Inc.	75	100 (Tc)	10.5 @ 30A, 10V	136 @ 10V	268 (Tc)	TO-220-3	Active	ROHS3 Compliant
DMNH6008SCT	Diodes Incorporated	60	130 (Tc)	8 @ 20A, 10V	21 @ 10V	210 (Tc)	TO-220-3	Active	ROHS3 Compliant
IRF1010EZPBF	Infineon Technologies	60	75 (Tc)	8.5 @ 51A, 10V	86 @ 10V	140 (Tc)	TO-220-3	Active	ROHS3 Compliant
IXTP90N055T2	IXYS	55	90 (Tc)	8.4 @ 25A, 10V	42 @ 10V	150 (Tc)	TO-220-3	Active	ROHS3 Compliant
AOT2610L	Alpha & Omega Semiconductor Inc.	60	55 (Tc)	10.7 @ 20A, 10V	30 @ 10V	75 (Tc)	TO-220-3	Active	ROHS3 Compliant
PSMN5R6-100PS,127	Nexperia USA Inc.	100	100 (Tc)	5.6 @ 25A, 10V	141 @ 10V	306 (Tc)	TO-220-3	Obsolete	ROHS3 Compliant
IRF60B217	International Rectifier	60	60 (Tc)	9 @ 36A, 10V	66 @ 10V	83 (Tc)	TO-220-3	Obsolete	RoHS non-compliant

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compliance):

AOT470 is the most suitable primary substitute. It exceeds the STP80NF70 in voltage rating (75V vs. 68V), current capacity (100A vs. 98A), and power dissipation (268W vs. 190W). The device maintains TO-220-3 packaging, RoHS3 compliance, and active product status. Gate charge is higher (136 nC vs. 75 nC), requiring verification of gate drive circuit capability.

DMNH6008SCT provides an alternative with higher current capacity (130A) and lower on-state resistance (8 mOhm vs. 9.8 mOhm). However, the voltage rating is reduced to 60V, limiting application to circuits with lower voltage margins. This device includes AEC-Q101 automotive qualification and active status.

Secondary Substitutes (Active Status, Voltage or Current Trade-offs):

IRF1010EZPBF is an active Infineon HEXFET® device with 60V rating and 75A current capacity. It provides lower on-state resistance (8.5 mOhm) but reduced current handling compared to the STP80NF70. Suitable for applications where current demand is lower than 98A.

IXTP90N055T2 operates at 55V with 90A capacity, representing a voltage and current reduction. The device features lower gate charge (42 nC) and reduced power dissipation (150W), making it suitable for lower-voltage applications with moderate current requirements.

Limited Substitutes (Reduced Current Capacity):

AOT2610L provides 60V rating but only 55A continuous current, representing a significant reduction from the STP80NF70. Use is limited to applications with lower current demands.

Obsolete or Non-Compliant Parts (Not Recommended for New Applications):

PSMN5R6-100PS,127 carries obsolete product status despite RoHS3 compliance. IRF60B217 is obsolete and RoHS non-compliant, making it unsuitable for new designs or regulated applications.

Frequently Asked Questions (FAQ)

Q: Can the AOT470 directly replace the STP80NF70 in all applications?

A: AOT470 is mechanically and electrically compatible in TO-220-3 packaging. However, the higher gate charge (136 nC vs. 75 nC) requires verification that the gate drive circuit can supply sufficient current within the switching time window. Thermal performance is improved due to higher power dissipation rating (268W vs. 190W).

Q: What is the primary limitation of DMNH6008SCT as a substitute?

A: DMNH6008SCT operates at 60V maximum drain-to-source voltage, compared to 68V for the STP80NF70. This 8V reduction in voltage rating decreases circuit margin in applications operating near the upper voltage limit. Current capacity (130A) exceeds the STP80NF70, making it suitable for current-limited designs.

Q: Why is IXTP90N055T2 listed as a substitute despite lower voltage and current ratings?

A: IXTP90N055T2 meets the TO-220-3 package requirement and maintains RoHS3 compliance with active product status. It is suitable for applications where the actual operating voltage is below 55V and current demand is below 90A. The lower gate charge (42 nC) may reduce gate drive power requirements.

Q: Are all substitute parts RoHS3 compliant?

A: No. PSMN5R6-100PS,127 and IRF60B217 are listed as obsolete or non-compliant. IRF60B217 is explicitly RoHS non-compliant. These parts are unsuitable for applications requiring regulatory compliance.

Q: What is the significance of product status in selecting a substitute?

A: Active product status indicates ongoing manufacturer support, availability, and compliance with current standards. The STP80NF70 is marked "Not For New Designs," indicating legacy status. Substitutes with active status (AOT470, DMNH6008SCT, IRF1010EZPBF, IXTP90N055T2, AOT2610L) provide better long-term supply assurance and regulatory alignment.

Q: Can I use a substitute with lower on-state resistance (Rds On)?

A: Yes. Lower on-state resistance reduces power dissipation and heat generation, improving efficiency. Devices such as DMNH6008SCT (8 mOhm) and IRF1010EZPBF (8.5 mOhm) offer improvements over the STP80NF70 (9.8 mOhm). Verify that the gate drive circuit can support the potentially different gate charge characteristics.

Q: What packaging considerations apply to these substitutes?

A: All listed substitutes use TO-220-3 through-hole packaging, ensuring mechanical compatibility with the STP80NF70. Thermal interface requirements (heatsink mounting, thermal compound) remain consistent across all substitutes.

Q: Is gate charge (Qg) a critical parameter for substitution?

A: Gate charge affects switching speed and gate drive power requirements. The STP80NF70 has 75 nC gate charge. Substitutes with significantly higher gate charge (e.g., AOT470 at 136 nC) require verification that the gate driver can supply adequate current. Lower gate charge (e.g., IXTP90N055T2 at 42 nC) reduces gate drive stress.

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