STP80NF55-06FP Equivalent & Substitute Parts

Part Overview

The STP80NF55-06FP is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 55V drain-to-source voltage and 60A continuous drain current at 25°C (Tc). This device is part of the STripFET™ II series and features a Through Hole TO-220FP package configuration. The part is classified as Obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling capacity, thermal characteristics, and package form factors while meeting current product availability and compliance requirements.

Substiute Parts

STP80NF55-06FP
STMicroelectronicsIn Stock: 15384STP80NF55-06FP Datasheet
STP80NF55-06FP
Current Part
AOTF2606L
Alpha & Omega Semiconductor Inc.In Stock: 1605AOTF2606L Datasheet
AOTF2606L
Similar
IRFI3205PBF
Infineon TechnologiesIn Stock: 2715IRFI3205PBF Datasheet
IRFI3205PBF
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 60 A (Tc)
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On) 10 V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 189 nC @ 10V
Power Dissipation (Max) 45 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the STP80NF55-06FP is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must support a Drain to Source Voltage (Vdss) equal to or greater than 55V. This ensures the device can withstand the maximum voltage stress in the application circuit.

Current Handling Capacity: Substitute parts must support continuous drain current (Id) at 25°C equal to or greater than 60A (Tc). This parameter ensures thermal and electrical performance under full-load conditions.

On-State Resistance (Rds On): Substitute parts must maintain Rds On specifications at the specified gate-source voltage (10V) that do not exceed the original specification, ensuring comparable power dissipation and thermal performance.

Gate Threshold Voltage (Vgs(th)): Substitute parts must maintain compatible gate threshold voltage specifications to ensure proper switching behavior with existing gate drive circuits.

Thermal Performance: Substitute parts must support power dissipation ratings sufficient for the application thermal environment.

Package and Mounting: Substitute parts must use Through Hole mounting in TO-220 package variants to ensure mechanical and electrical compatibility with existing PCB layouts.

Compliance and Availability: Substitute parts must maintain RoHS3 compliance and active product status to ensure long-term supply chain viability and regulatory adherence.

Parameter Comparison

Parameter STP80NF55-06FP (Main) IRFI3205PBF (Substitute) AOTF2606L (Substitute)
Manufacturer STMicroelectronics Infineon Technologies Alpha & Omega Semiconductor Inc.
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 55 V 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 60 A (Tc) 64 A (Tc) 54 A (Tc)
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 40A, 10V 8 mOhm @ 34A, 10V 6.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On) 10 V 10 V 10 V
Vgs(th) (Max) @ Id 4 V @ 250µA 4 V @ 250µA 3.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 189 nC @ 10V 170 nC @ 10V 75 nC @ 10V
Vgs (Max) ±20 V ±20 V ±20 V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25V 4000 pF @ 25V 4050 pF @ 30V
Power Dissipation (Max) 45 W (Tc) 63 W (Tc) 36.5 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ) -55 to 175 °C (TJ) -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IRFI3205PBF (Infineon Technologies HEXFET®): This substitute part is rated for 55V Vdss (matching the original specification) and 64A continuous drain current, exceeding the 60A requirement of the STP80NF55-06FP. The IRFI3205PBF maintains compatible gate threshold voltage (4V @ 250µA) and maximum gate-source voltage (±20V). Power dissipation capability is 63W (Tc), providing thermal margin above the original 45W specification. The device is classified as Active product status, ensuring long-term availability and supply chain continuity. RoHS3 compliance and MSL 1 rating match the original part. The TO-220AB Full-Pak package is mechanically compatible with TO-220-3 Full Pack footprints. Gate charge is 170 nC, slightly lower than the original 189 nC, resulting in faster switching characteristics. Rds On specification of 8 mOhm @ 34A, 10V is marginally higher than the original 6.5 mOhm @ 40A, 10V, representing acceptable performance variance within the same voltage class.

AOTF2606L (Alpha & Omega Semiconductor Inc.): This substitute part is rated for 60V Vdss, exceeding the original 55V specification, providing additional voltage margin. Continuous drain current is rated at 54A (Tc), which is below the original 60A specification. The AOTF2606L maintains compatible gate threshold voltage (3.5V @ 250µA, slightly lower than original 4V) and maximum gate-source voltage (±20V). Power dissipation capability is 36.5W (Tc), which is below the original 45W specification. The device is classified as Active product status, ensuring supply availability. RoHS3 compliance and MSL 1 rating match the original part. The TO-220F package is mechanically compatible with TO-220-3 Full Pack footprints. Gate charge is significantly lower at 75 nC @ 10V compared to the original 189 nC, enabling faster switching response. Rds On specification of 6.5 mOhm @ 20A, 10V matches the original specification at the same gate voltage, though measured at lower current. This part is suitable for applications where current requirements do not exceed 54A and thermal dissipation does not exceed 36.5W.

Selection Criteria: For applications requiring full 60A current capacity and 45W thermal performance, the IRFI3205PBF is the primary substitute. For applications with reduced current requirements (below 54A) and lower thermal dissipation (below 36.5W), the AOTF2606L provides an alternative with faster switching characteristics. Both parts maintain voltage compatibility, compliance certifications, and package mechanical compatibility with the original STP80NF55-06FP.

Frequently Asked Questions (FAQ)

Q: Can the IRFI3205PBF directly replace the STP80NF55-06FP in all applications?

A: The IRFI3205PBF is electrically compatible with the STP80NF55-06FP across all critical parameters: matching 55V Vdss rating, exceeding 60A current requirement with 64A capability, maintaining compatible gate threshold voltage and maximum gate-source voltage specifications, and providing superior thermal performance at 63W versus 45W. The TO-220AB Full-Pak package is mechanically compatible with TO-220-3 Full Pack PCB layouts. Direct substitution is supported for applications operating within the original design specifications.

Q: What are the limitations of the AOTF2606L as a substitute?

A: The AOTF2606L is rated for 54A continuous drain current, which is 6A below the original 60A specification. Power dissipation capability is 36.5W (Tc), which is 8.5W below the original 45W specification. These limitations restrict the AOTF2606L to applications with reduced current and thermal requirements. The higher voltage rating (60V versus 55V) provides additional margin but does not compensate for reduced current and thermal capacity. Applications requiring full 60A current capacity or thermal dissipation approaching 45W must use the IRFI3205PBF.

Q: Are the TO-220F and TO-220AB packages mechanically interchangeable with the original TO-220FP package?

A: All three package variants (TO-220FP, TO-220F, TO-220AB) are Through Hole TO-220 family packages with identical pin configurations and mechanical footprints. PCB layouts designed for TO-220-3 Full Pack accommodate all three variants without modification. Pin spacing, lead diameter, and mounting hole positions are standardized across the TO-220 family.

Q: How do gate charge differences affect circuit performance?

A: The IRFI3205PBF has gate charge of 170 nC @ 10V, compared to the original 189 nC. The AOTF2606L has significantly lower gate charge at 75 nC @ 10V. Lower gate charge results in faster switching transitions and reduced gate drive power requirements. These differences are within acceptable ranges for standard gate drive circuits designed for 55V N-Channel MOSFETs. Gate drive circuits must supply sufficient current to charge the gate capacitance within the required switching time; lower gate charge reduces this requirement but does not create incompatibility.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original STP80NF55-06FP. REACH compliance status is Unaffected for all parts. ECCN classification is EAR99 for all parts. These certifications ensure regulatory compliance and supply chain continuity for applications subject to environmental and export control requirements.

Q: Can the AOTF2606L be used in high-current applications?

A: The AOTF2606L is rated for 54A continuous drain current and 36.5W power dissipation. Applications requiring sustained currents at or above 60A or thermal dissipation approaching 45W must use the IRFI3205PBF. The AOTF2606L is suitable for applications with peak currents below 54A and average thermal dissipation below 36.5W. Exceeding these ratings results in device degradation and potential failure.

Q: How do Rds On specifications compare across the three parts?

A: The STP80NF55-06FP specifies 6.5 mOhm @ 40A, 10V. The IRFI3205PBF specifies 8 mOhm @ 34A, 10V, representing a 1.5 mOhm increase. The AOTF2606L specifies 6.5 mOhm @ 20A, 10V, matching the original specification at the same gate voltage but measured at lower current. Rds On increases with temperature and decreases with gate voltage. The IRFI3205PBF's slightly higher Rds On results in marginally higher power dissipation but remains within acceptable performance variance for the 55V voltage class.

Q: What is the product status significance for long-term supply?

A: The STP80NF55-06FP is classified as Obsolete, indicating discontinued production and limited remaining inventory. Both substitute parts (IRFI3205PBF and AOTF2606L) are classified as Active, indicating ongoing production and long-term supply availability. Active product status ensures component availability for new designs, production runs, and field replacements throughout the product lifecycle.

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