STP80NF06 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STP80NF06 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage with 80A continuous drain current at 25°C. The device is packaged in TO-220-3 through-hole configuration and delivers 300W maximum power dissipation. This part is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts are selected based on matching or exceeding critical electrical parameters while maintaining compatible packaging and thermal characteristics.

Key Parameters

Parameter	STP80NF06 Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On) @ 40A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	150	nC
Input Capacitance (Ciss) @ 25V	3850	pF
Power Dissipation (Max)	300	W (Tc)
Operating Temperature (TJ)	175	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the STP80NF06 are grouped based on the following critical electrical and mechanical parameters:

Primary Selection Criteria:

Drain-to-Source Voltage (Vdss): Minimum 60V (equal or higher voltage rating required)
Continuous Drain Current (Id): Minimum 75A at 25°C (maintains or exceeds current capability)
On-State Resistance (Rds On): Maximum 12mOhm @ specified current and gate voltage (ensures thermal performance compatibility)
Package Type: TO-220-3 through-hole configuration (mechanical and thermal interface compatibility)
Technology: N-Channel MOSFET with Metal Oxide construction (functional equivalence)
RoHS Compliance: ROHS3 Compliant (regulatory requirement)

Secondary Compatibility Factors:

Gate Threshold Voltage (Vgs(th)): 2.5V to 4.5V range (acceptable gate drive compatibility)
Maximum Operating Temperature: 175°C or higher (thermal envelope match)
Gate Charge (Qg): Comparable switching characteristics for circuit performance

Substitutes are classified as Direct (same manufacturer, higher voltage rating) or Similar (alternative manufacturers with equivalent electrical performance within the specified parameter ranges).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Status	Package
STP80NF06	STMicroelectronics	60	80	8 @ 40A, 10V	150 @ 10V	3850 @ 25V	300	Obsolete	TO-220-3
STP60NF10	STMicroelectronics	100	80	23 @ 40A, 10V	104 @ 10V	4270 @ 25V	300	Active	TO-220-3
AOT2606L	Alpha & Omega Semiconductor	60	72 (Tc)	6.5 @ 20A, 10V	75 @ 10V	4050 @ 30V	115 (Tc)	Active	TO-220-3
AOT2610L	Alpha & Omega Semiconductor	60	55 (Tc)	10.7 @ 20A, 10V	30 @ 10V	2007 @ 30V	75 (Tc)	Active	TO-220-3
HUF75339P3	onsemi	55	75	12 @ 75A, 10V	130 @ 20V	2000 @ 25V	200	Active	TO-220-3
HUF75344P3	onsemi	55	75	8 @ 75A, 10V	210 @ 20V	3200 @ 25V	285	Active	TO-220-3
IRF1010EPBF	Infineon Technologies	60	84	12 @ 50A, 10V	130 @ 10V	3210 @ 25V	200	Not For New Designs	TO-220-3
IRF1010EZPBF	Infineon Technologies	60	75	8.5 @ 51A, 10V	86 @ 10V	2810 @ 25V	140	Active	TO-220-3
IRF1010NPBF	Infineon Technologies	55	85	11 @ 43A, 10V	120 @ 10V	3210 @ 25V	180	Not For New Designs	TO-220-3
IRF1018EPBF	Infineon Technologies	60	79	8.4 @ 47A, 10V	69 @ 10V	2290 @ 50V	110	Active	TO-220-3
IRF3205PBF	Infineon Technologies	55	110	8 @ 62A, 10V	146 @ 10V	3247 @ 25V	200	Active	TO-220-3

Engineering Selection Recommendations

Direct Manufacturer Substitute (STMicroelectronics):

STP60NF10 is the direct substitute from STMicroelectronics within the STripFET™ II series. This part maintains 80A continuous drain current and 300W power dissipation identical to the STP80NF06. The voltage rating increases to 100V, providing enhanced overvoltage margin. The part is Active status, ensuring long-term availability and supply chain continuity. RoHS3 compliance and REACH unaffected status match the original part. On-state resistance increases to 23mOhm at 40A, which represents a trade-off inherent to higher voltage-rated devices. This substitute is suitable for applications where the 60V rating margin is insufficient or where future design flexibility is required.

Active Status Alternatives (Infineon Technologies HEXFET® Series):

IRF1010EZPBF and IRF1018EPBF are Active status alternatives from Infineon Technologies. Both maintain 60V Vdss rating and deliver drain currents within 75–79A range, closely matching the STP80NF06 specification. IRF1010EZPBF provides 8.5mOhm on-state resistance at 51A, comparable to the original 8mOhm specification. IRF1018EPBF delivers 8.4mOhm at 47A with reduced gate charge (69nC) and lower input capacitance (2290pF), offering improved switching performance for high-frequency applications. Both parts are RoHS3 compliant and rated to 175°C junction temperature. Power dissipation ratings (140W and 110W respectively) are lower than the original 300W, requiring thermal design verification for high-power applications.

Active Status Alternatives (onsemi UltraFET™ Series):

HUF75344P3 is an Active status alternative with 55V Vdss, 75A continuous drain current, and 285W power dissipation. The 8mOhm on-state resistance at 75A matches the original device performance. This part is suitable for applications where the 60V margin is acceptable and where the lower voltage rating reduces component cost. HUF75339P3 provides similar electrical characteristics with 12mOhm on-state resistance and 200W power dissipation, offering a cost-optimized alternative.

Active Status Alternatives (Alpha & Omega Semiconductor):

AOT2606L maintains 60V Vdss with 72A continuous drain current (Tc) and delivers superior on-state resistance of 6.5mOhm at 20A. This part is suitable for low-loss applications where gate drive voltage is limited to 10V. Power dissipation is rated at 115W (Tc), requiring thermal design consideration for high-power circuits. AOT2610L provides 55A continuous drain current with 10.7mOhm on-state resistance, suitable for moderate-power applications requiring 60V voltage rating.

Obsolete Status Parts (Not Recommended for New Designs):

IRF1010EPBF and IRF1010NPBF carry "Not For New Designs" status and should not be selected for new product development. These parts are included for reference in legacy system maintenance only.

Frequently Asked Questions (FAQ)

Q: Can STP60NF10 directly replace STP80NF06 in existing circuits?

A: STP60NF10 is a direct manufacturer substitute with identical current and power ratings. The 100V voltage rating provides enhanced margin over the original 60V specification. On-state resistance increases from 8mOhm to 23mOhm, which may increase power dissipation in high-current applications. Circuit thermal analysis is required to confirm compatibility. Gate threshold voltage and maximum gate voltage remain identical, ensuring gate drive circuit compatibility.

Q: What is the primary difference between 60V and 55V rated devices?

A: Devices rated 55V (HUF75339P3, HUF75344P3, IRF1010NPBF, IRF3205PBF) have lower voltage margin compared to 60V-rated parts. These devices are suitable for applications where the supply voltage does not exceed 50V with transient overvoltage margin. Selection depends on circuit maximum voltage specification and transient overvoltage protection design.

Q: Why do higher voltage-rated MOSFETs have higher on-state resistance?

A: On-state resistance increases with voltage rating due to the thicker drift region required in the semiconductor structure to withstand higher electric fields. STP60NF10 (100V, 23mOhm) demonstrates this characteristic compared to STP80NF06 (60V, 8mOhm). This trade-off is fundamental to MOSFET design and must be evaluated against application power dissipation requirements.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed carry RoHS3 Compliant status, matching the original STP80NF06 specification. REACH status is uniformly "REACH Unaffected" across all parts, confirming regulatory compliance for European market applications.

Q: What is the significance of "Active" versus "Not For New Designs" product status?

A: Active status parts (STP60NF10, AOT2606L, AOT2610L, HUF75339P3, HUF75344P3, IRF1010EZPBF, IRF1018EPBF, IRF3205PBF) are recommended for new product designs and carry long-term supply commitments from manufacturers. Parts marked "Not For New Designs" (IRF1010EPBF, IRF1010NPBF) are suitable only for legacy system maintenance and should not be selected for new development. The original STP80NF06 is Obsolete, necessitating migration to an Active alternative.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (AOT2610L at 30nC, IRF1018EPBF at 69nC) reduces switching losses and allows faster switching speeds, beneficial for high-frequency applications. Higher gate charge (STP60NF10 at 104nC, HUF75344P3 at 210nC) requires more gate drive energy but may provide improved noise immunity in noisy environments. Gate drive circuit design must accommodate the selected part's gate charge specification.

Q: Can devices with lower power dissipation ratings substitute for the 300W STP80NF06?

A: Devices with lower power dissipation ratings (IRF1010EZPBF at 140W, IRF1018EPBF at 110W, AOT2606L at 115W) can substitute only if circuit thermal design ensures junction temperature remains within the 175°C maximum operating limit. Thermal analysis must account for actual operating current, on-state resistance, and heat sink thermal resistance. For applications requiring sustained high-power operation, STP60NF10 (300W) or HUF75344P3 (285W) are preferred.

Q: What packaging considerations apply to TO-220-3 devices?

A: All substitute parts are packaged in TO-220-3 through-hole configuration, maintaining mechanical and thermal interface compatibility with the original STP80NF06. PCB layout, heat sink mounting, and lead spacing remain identical. No mechanical redesign is required for package substitution. Thermal interface material and mounting pressure specifications should follow the heat sink manufacturer's recommendations for optimal thermal performance.

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