STP80NF03L N-Channel 30V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The STP80NF03L is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 80A continuous drain current in the TO-220 package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The part belongs to the STripFET™ II series and is designed for through-hole mounting in power switching applications requiring moderate voltage and high current handling.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On) @ 40A, 10V	4.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 4.5V	110	nC
Input Capacitance (Ciss) @ 25V	5500	pF
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP80NF03L is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 80A or greater at Tc
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET
Gate Voltage Range: Compatible with ±20V or ±16V maximum ratings

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equal values preferred for thermal performance
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Input Capacitance (Ciss): Influences gate drive power consumption
Power Dissipation Rating: Determines thermal management capability
Product Status: Active or Not For New Designs acceptable; Obsolete status indicates end-of-life

The substitute parts listed below meet the mandatory matching criteria and maintain electrical compatibility within the specified parameter ranges. Differences in secondary parameters reflect manufacturing process variations and design improvements across different manufacturers.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Package	Status
STP80NF03L	STMicroelectronics	30	80	4.5 @ 40A, 10V	110 @ 4.5V	5500 @ 25V	300	TO-220-3	Obsolete
FDP8030L	Fairchild Semiconductor	30	80	3.5 @ 80A, 10V	170 @ 5V	10500 @ 15V	187	TO-220-3	Active
IPP80N03S4L03AKSA1	Infineon Technologies	30	80	2.7 @ 80A, 10V	140 @ 10V	9750 @ 25V	136	TO-220-3	Active
IRL3803PBF	Infineon Technologies	30	140	6 @ 71A, 10V	140 @ 4.5V	5000 @ 25V	200	TO-220-3	Not For New Designs
IRL7833PBF	Infineon Technologies	30	150	3.8 @ 38A, 10V	47 @ 4.5V	4170 @ 15V	140	TO-220-3	Not For New Designs
IPP042N03LGXKSA1	Infineon Technologies	30	70	4.2 @ 30A, 10V	38 @ 10V	3900 @ 15V	79	TO-220-3	Not For New Designs
IPP055N03LGXKSA1	Infineon Technologies	30	50	5.5 @ 30A, 10V	31 @ 10V	3200 @ 15V	68	TO-220-3	Not For New Designs
FDP8874	onsemi	30	114	5.3 @ 40A, 10V	72 @ 10V	3130 @ 15V	110	TO-220-3	Obsolete
PSMN4R3-30PL,127	Nexperia USA Inc.	30	100	4.3 @ 15A, 10V	41.5 @ 10V	2400 @ 12V	103	TO-220-3	Obsolete

Engineering Selection Recommendations

Primary Substitute (Active Status):

The FDP8030L (Fairchild Semiconductor) and IPP80N03S4L03AKSA1 (Infineon Technologies) are the recommended primary substitutes for the STP80NF03L. Both devices are classified as Active and meet all mandatory electrical parameters: 30V Vdss, 80A continuous drain current, and TO-220-3 package configuration. The FDP8030L provides direct current and voltage equivalence with improved on-state resistance (3.5 mOhm vs. 4.5 mOhm), while the IPP80N03S4L03AKSA1 offers superior thermal performance with lower on-state resistance (2.7 mOhm) and reduced power dissipation (136W vs. 300W). Both parts are ROHS3 compliant and carry unlimited moisture sensitivity level (MSL 1).

Secondary Substitutes (Higher Current Capability):

The IRL3803PBF and IRL7833PBF (Infineon Technologies, HEXFET® series) provide higher current ratings (140A and 150A respectively) while maintaining 30V Vdss and TO-220-3 packaging. These parts are classified as Not For New Designs but remain available in inventory. Selection of these parts is appropriate when application requirements exceed 80A continuous current or when thermal margin is critical. The IRL7833PBF offers the lowest on-state resistance (3.8 mOhm) among all listed substitutes.

Alternative Substitutes (Current Derating Required):

The IPP042N03LGXKSA1 (70A) and IPP055N03LGXKSA1 (50A) are Infineon OptiMOS™ series devices with reduced current ratings. These parts are suitable only for applications where the required continuous drain current does not exceed their respective ratings. Both are classified as Not For New Designs.

Obsolete Status Alternatives:

The FDP8874 (onsemi, PowerTrench® series) and PSMN4R3-30PL,127 (Nexperia) are classified as Obsolete. These parts are listed for reference only and should not be selected for new designs unless inventory constraints require their use.

Frequently Asked Questions (FAQ)

Q: Can the FDP8030L directly replace the STP80NF03L without circuit modifications?

A: Yes. The FDP8030L matches the STP80NF03L in Vdss (30V), continuous drain current (80A), and TO-220-3 package. Both devices operate within the same gate voltage range (±20V) and threshold voltage specifications. The improved on-state resistance of the FDP8030L (3.5 mOhm vs. 4.5 mOhm) reduces power dissipation, which is a beneficial change. No circuit modifications are required.

Q: What is the difference between the IPP80N03S4L03AKSA1 and the STP80NF03L?

A: Both devices share identical Vdss (30V) and continuous drain current (80A) ratings in TO-220-3 packages. The IPP80N03S4L03AKSA1 features lower on-state resistance (2.7 mOhm vs. 4.5 mOhm) and reduced power dissipation (136W vs. 300W), resulting in improved thermal performance. The IPP80N03S4L03AKSA1 is Active status, while the STP80NF03L is Obsolete. The IPP80N03S4L03AKSA1 has a maximum gate voltage of ±16V compared to ±20V for the STP80NF03L.

Q: Why are the IRL3803PBF and IRL7833PBF listed as substitutes if they have higher current ratings?

A: Higher current ratings provide design flexibility and thermal margin. These devices maintain the same 30V Vdss and TO-220-3 package, making them electrically compatible. Applications requiring only 80A can operate these devices at reduced stress levels, extending component life and improving reliability. However, they are classified as Not For New Designs.

Q: Can I use the IPP042N03LGXKSA1 (70A) in place of the STP80NF03L (80A)?

A: The IPP042N03LGXKSA1 is suitable only if the application's actual continuous drain current requirement does not exceed 70A. If the design requires the full 80A capability of the STP80NF03L, the IPP042N03LGXKSA1 will operate outside its rated specifications and is not recommended.

Q: What does "Not For New Designs" status mean for the IRL3803PBF and IRL7833PBF?

A: "Not For New Designs" indicates that the manufacturer has discontinued active development and marketing of these parts. They remain available in existing inventory but are not recommended for new product designs. These parts are suitable for replacement in existing equipment or legacy system maintenance where inventory is available.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status, matching the STP80NF03L. All parts also have MSL 1 (Unlimited) moisture sensitivity level and REACH Unaffected status.

Q: How do I choose between FDP8030L and IPP80N03S4L03AKSA1?

A: Both are Active status and provide direct electrical equivalence. The FDP8030L (Fairchild) offers proven availability and lower cost. The IPP80N03S4L03AKSA1 (Infineon) provides superior thermal performance with lower on-state resistance and power dissipation. Selection depends on thermal design requirements and supply chain availability. Both are valid engineering choices.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects the energy required to switch the MOSFET on and off. Lower gate charge (e.g., PSMN4R3-30PL,127 at 41.5 nC) reduces gate drive circuit power consumption and enables faster switching. Higher gate charge (e.g., FDP8030L at 170 nC) requires more drive energy but may provide improved noise immunity. Selection depends on the gate drive circuit design and switching frequency requirements.

Q: Can I use PSMN4R3-30PL,127 as a substitute?

A: The PSMN4R3-30PL,127 meets the mandatory electrical parameters (30V Vdss, 100A continuous current, TO-220-3 package) and is ROHS3 compliant. However, it is classified as Obsolete. It is suitable for replacement applications where inventory is available but should not be selected for new designs.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message