STP80N6F6 N-Channel 60V 110A MOSFET Equivalent & Substitute Parts

Part Overview

The STP80N6F6 is an N-Channel 60V 110A MOSFET manufactured by STMicroelectronics in the DeepGATE™ and STripFET™ VI series. This device is rated for 120W power dissipation and operates across the temperature range of -55°C to 175°C. The part is housed in a TO-220-3 through-hole package and carries AEC-Q101 automotive qualification with ROHS3 compliance.

The STP80N6F6 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Suitable alternatives must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating the through-hole TO-220-3 package format.

Key Parameters

Parameter	STP80N6F6 Value	Unit	Substitution Criticality
Drain to Source Voltage (Vdss)	60	V	Critical
Continuous Drain Current (Id) @ 25°C	110	A (Tc)	Critical
On-Resistance (Rds On) @ 50A, 10V	5.8	mOhm	Critical
Power Dissipation (Max)	120	W (Tc)	Critical
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V	Important
Gate Charge (Qg) @ 10V	122	nC	Important
Input Capacitance (Ciss) @ 25V	7480	pF	Important
Operating Temperature Range	-55 to 175	°C (TJ)	Critical
Package Type	TO-220-3	Through Hole	Critical
Automotive Grade / AEC-Q101	Yes	Qualified	Important

Substitute Part Grouping Explanation

Substitution of the STP80N6F6 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Substitution Parameters:

Drain-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must equal or exceed 110A at Tc
On-Resistance (Rds On) must not exceed 5.8mOhm at the specified test conditions
Power Dissipation (Max) must equal or exceed 120W at Tc
Package must be TO-220-3 through-hole configuration
Operating temperature range must span -55°C to 175°C

Important Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)) should remain within ±20V gate voltage specification
Gate Charge (Qg) and Input Capacitance (Ciss) affect switching characteristics but do not prevent substitution if electrical ratings are met
Automotive qualification (AEC-Q101) and ROHS3 compliance are preferred for applications requiring these certifications

Substitute parts are grouped into two categories: Manufacturer Recommended (direct STMicroelectronics upgrade) and Similar Alternatives (functionally equivalent parts from other manufacturers meeting all critical parameters).

Parameter Comparison

Parameter	STP80N6F6	STP100N6F7	AOT2606L	CSD18533KCS	DMT6005LCT	DMT6010SCT	DMTH6010SCT	FDP070AN06A0	FDP5800	IPP057N06N3GXKSA1	IPP060N06NAKSA1
Manufacturer	STMicroelectronics	STMicroelectronics	Alpha & Omega	Texas Instruments	Diodes Inc.	Diodes Inc.	Diodes Inc.	Fairchild	onsemi	Infineon	Infineon
Vdss (V)	60	60	60	60	60	60	60	60	60	60	60
Id @ Tc (A)	110	100	72	100	100	98	100	80	80	80	45
Rds On (mOhm)	5.8 @ 50A	5.6 @ 50A	6.5 @ 20A	6.3 @ 75A	6.0 @ 20A	7.2 @ 20A	7.2 @ 20A	7.0 @ 80A	6.0 @ 80A	5.7 @ 80A	6.0 @ 45A
Power Dissipation (W)	120	125	115	192	104	104	125	175	242	115	83
Vgs(th) (V)	4.5 @ 250µA	4.0 @ 250µA	3.5 @ 250µA	2.3 @ 250µA	3.0 @ 250µA	4.0 @ 250µA	4.0 @ 250µA	4.0 @ 250µA	2.5 @ 250µA	4.0 @ 58µA	2.8 @ 36µA
Qg (nC)	122 @ 10V	30 @ 10V	75 @ 10V	34 @ 10V	47.1 @ 10V	36.3 @ 10V	36.3 @ 10V	66 @ 10V	145 @ 10V	82 @ 10V	27 @ 10V
Ciss (pF)	7480 @ 25V	1980 @ 25V	4050 @ 30V	3025 @ 30V	2962 @ 30V	1940 @ 30V	1940 @ 30V	3000 @ 25V	9160 @ 15V	6600 @ 30V	2000 @ 30V
Tj Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	PG-TO220-3	PG-TO220-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active	Not For New Designs	Active
AEC-Q101	Yes	No	No	No	Yes	No	Yes	No	No	No	No

Engineering Selection Recommendations

Tier 1: Manufacturer Recommended Substitute

STP100N6F7 (STMicroelectronics) is the primary recommended substitute. This part maintains the same 60V Vdss rating and achieves 100A continuous drain current, representing a 9% reduction from the original 110A specification. The on-resistance of 5.6mOhm at 50A, 10V is superior to the STP80N6F6 at 5.8mOhm. Power dissipation increases to 125W, exceeding the original 120W requirement. The device operates across the full -55°C to 175°C temperature range. Product status is Active, ensuring long-term availability. This part is from the same manufacturer and series lineage (STripFET™ F7), providing design continuity. Note: AEC-Q101 automotive qualification is not listed for this part.

Tier 2: Functionally Equivalent Alternatives

CSD18533KCS (Texas Instruments NexFET™ series) meets all critical electrical parameters with 100A continuous drain current at Tc and 6.3mOhm on-resistance at 75A, 10V. Power dissipation of 192W significantly exceeds requirements. The device maintains 60V Vdss and -55°C to 175°C operating range. Product status is Active. This part is suitable for applications where manufacturer diversity is acceptable.

DMTH6010SCT (Diodes Incorporated) provides 100A continuous drain current and 125W power dissipation, matching the STP100N6F7 performance envelope. On-resistance is 7.2mOhm at 20A, 10V. Operating temperature range extends to 175°C. Product status is Active with AEC-Q101 automotive qualification, making this part suitable for automotive applications requiring the same certification level as the original STP80N6F6.

DMT6005LCT (Diodes Incorporated) delivers 100A continuous drain current with 104W power dissipation and 6.0mOhm on-resistance at 20A, 10V. This part carries AEC-Q101 automotive qualification. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original specification. Product status is Active. This part is suitable for applications not requiring the full 175°C upper temperature limit.

Tier 3: Reduced Current Alternatives

FDP070AN06A0 (Fairchild PowerTrench® series) and FDP5800 (onsemi PowerTrench® series) both provide 80A continuous drain current, representing a 27% reduction from the original 110A specification. These parts are suitable only for applications where the lower current rating is acceptable. FDP5800 offers superior power dissipation at 242W and maintains the full -55°C to 175°C temperature range.

IPP057N06N3GXKSA1 (Infineon OptiMOS™ series) provides 80A continuous drain current with 115W power dissipation. Product status is "Not For New Designs," limiting suitability to legacy system support only.

IPP060N06NAKSA1 (Infineon OptiMOS™ series) provides only 45A continuous drain current, representing a 59% reduction from the original specification. This part is unsuitable for direct substitution in applications requiring the full 110A rating.

Frequently Asked Questions (FAQ)

Q: Can the STP100N6F7 directly replace the STP80N6F6 in all applications?

A: The STP100N6F7 is suitable for applications where continuous drain current requirements do not exceed 100A. The 9% reduction in current rating must be evaluated against actual circuit load conditions. All other electrical parameters (Vdss, Rds On, power dissipation, temperature range) are equal or superior. Mechanical compatibility is identical (TO-220-3 package). Verify that the application's maximum sustained current does not exceed 100A before substitution.

Q: What is the significance of the on-resistance (Rds On) parameter in substitution?

A: On-resistance directly determines power dissipation and heat generation in the MOSFET. Lower on-resistance values reduce I²R losses and improve thermal performance. The STP80N6F6 specifies 5.8mOhm at 50A, 10V. Substitute parts with equal or lower on-resistance values maintain or improve thermal characteristics. Parts with higher on-resistance values generate more heat and may require thermal management adjustments.

Q: Are the Infineon parts with PG-TO220-3 package compatible with standard TO-220-3 footprints?

A: The PG-TO220-3 package designation indicates a Infineon-specific variant of the TO-220-3 package. Pin configuration and mechanical dimensions are compatible with standard TO-220-3 through-hole PCB layouts. However, thermal performance characteristics may differ due to internal package construction. Verify thermal interface requirements (heatsink mounting, thermal compound) before substitution.

Q: Why do some substitute parts have lower operating temperature maximums?

A: DMT6005LCT and DMT6010SCT specify maximum junction temperature of 150°C, compared to the original 175°C. This 25°C reduction may be acceptable for applications operating at ambient temperatures below 125°C with adequate thermal management. Applications requiring operation near the 175°C limit must use parts with matching temperature specifications (STP100N6F7, CSD18533KCS, DMTH6010SCT, FDP070AN06A0, FDP5800, or IPP057N06N3GXKSA1).

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge affects switching speed and gate drive circuit requirements. The STP80N6F6 specifies 122nC at 10V, while substitute parts range from 27nC to 145nC. Lower gate charge values enable faster switching and reduce gate drive power consumption. Higher values require longer switching times and increased gate drive current. Verify that the existing gate drive circuit can supply sufficient current for the substitute part's gate charge specification.

Q: Is AEC-Q101 automotive qualification required for all applications?

A: AEC-Q101 qualification is mandatory for automotive applications subject to automotive industry standards. The original STP80N6F6 carries this qualification. Substitute parts DMTH6010SCT and DMT6005LCT also carry AEC-Q101 qualification, making them suitable for automotive designs. Parts without this qualification (STP100N6F7, CSD18533KCS, DMT6010SCT, FDP070AN06A0, FDP5800, IPP057N06N3GXKSA1, IPP060N06NAKSA1) are restricted to non-automotive applications unless the design does not require automotive compliance.

Q: Can parts with lower continuous drain current ratings be used in applications designed for 110A?

A: No. Parts with lower current ratings (AOT2606L at 72A, FDP070AN06A0 at 80A, FDP5800 at 80A, IPP057N06N3GXKSA1 at 80A, IPP060N06NAKSA1 at 45A) are unsuitable for direct substitution in circuits requiring 110A continuous drain current. Using an undersized part results in thermal stress, reduced reliability, and potential device failure. These parts are suitable only for new designs with reduced current requirements or for applications where the actual sustained current is confirmed to be below the substitute part's rating.

Q: What packaging considerations apply to through-hole TO-220-3 devices?

A: All listed substitute parts use through-hole TO-220-3 or compatible PG-TO220-3 packages, ensuring mechanical compatibility with existing PCB layouts. Pin assignments (Gate, Drain, Source) are standardized across all parts. Thermal interface requirements (heatsink mounting surface, thermal compound application) are identical. No PCB redesign is required for package compatibility. Verify heatsink mounting hardware and thermal interface material specifications with the substitute part's datasheet.

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