STP7N65M2 Equivalent & Substitute Parts

Part Overview

The STP7N65M2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 5A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the MDmesh™ series. The product status is listed as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ Id, Vgs	1.15	Ohm @ 2.5A, 10V
Power Dissipation (Max)	60	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STP7N65M2 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

FET Type must be N-Channel
Drain-to-Source Voltage (Vdss) must be greater than or equal to 650V
Continuous Drain Current (Id) must be greater than or equal to 5A at 25°C
On-state resistance (Rds On) must not exceed the maximum specified value
Power dissipation capability must support the application requirements
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Package type must be TO-220-3 through-hole configuration
Pin configuration must be compatible with existing PCB layouts

The FCP4N60 is identified as a substitute part. While the FCP4N60 exhibits a lower Vdss rating (600V versus 650V) and reduced continuous drain current (3.9A versus 5A), it maintains N-Channel MOSFET topology, identical package configuration (TO-220-3), and overlapping operating temperature range. The substitute is suitable for applications where the reduced voltage and current ratings are acceptable within the circuit design margins.

Parameter Comparison

Parameter	STP7N65M2 (Main Part)	FCP4N60 (Substitute)	Unit
Manufacturer	STMicroelectronics	Fairchild Semiconductor	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	650	600	V
Continuous Drain Current (Id) @ 25°C	5	3.9	A
Rds On (Max) @ Id, Vgs	1.15 @ 2.5A, 10V	1.2 @ 2A, 10V	Ohm
Gate Charge (Qg) (Max) @ Vgs	9	16.6	nC @ 10V
Vgs (Max)	±25	±30	V
Power Dissipation (Max)	60	50	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	Not specified	—

Engineering Selection Recommendations

STP7N65M2 (Main Part): The STP7N65M2 is classified as Obsolete. While 2357 pieces are currently in stock, this part number is no longer in active production. ROHS3 compliance and REACH unaffected status confirm environmental regulatory alignment. Selection of this part is appropriate only for maintenance of existing systems or when design specifications strictly require the 650V/5A performance envelope and MDmesh™ series characteristics.

FCP4N60 (Substitute Part): The FCP4N60 is classified as Active and manufactured by Fairchild Semiconductor. This part is suitable as a substitute when circuit design margins accommodate the reduced Vdss (600V) and Id (3.9A) ratings. The Active product status ensures ongoing availability and supply chain continuity. Both parts share identical operating temperature range (-55°C to 150°C) and TO-220-3 package configuration, enabling direct mechanical substitution. The FCP4N60 exhibits higher gate charge (16.6 nC versus 9 nC), which may affect switching speed characteristics in gate-drive-limited applications.

Selection between these parts depends on whether the application circuit design can operate within the FCP4N60 electrical specifications. If the circuit requires the full 650V/5A capability of the STP7N65M2, the FCP4N60 is not suitable.

Frequently Asked Questions (FAQ)

Q: Can the FCP4N60 directly replace the STP7N65M2 in all applications?

A: Direct replacement is possible only if the circuit design operates within the FCP4N60 electrical specifications. The FCP4N60 has lower maximum Vdss (600V versus 650V) and lower continuous drain current (3.9A versus 5A). Applications requiring the full 650V/5A performance envelope cannot use the FCP4N60 as a substitute.

Q: Are the pin configurations identical between STP7N65M2 and FCP4N60?

A: Both parts use TO-220-3 through-hole package configuration. Pin-to-pin compatibility is maintained for standard TO-220-3 layouts. Physical mounting and thermal characteristics are equivalent.

Q: What is the impact of the higher gate charge in the FCP4N60?

A: The FCP4N60 has gate charge of 16.6 nC at 10V compared to 9 nC for the STP7N65M2. Higher gate charge increases the time required to switch the device on and off, which may affect switching frequency performance and gate driver power dissipation in high-frequency applications.

Q: Why is the STP7N65M2 listed as Obsolete?

A: Obsolete status indicates the part is no longer in active production by the manufacturer. While inventory is currently available (2357 pieces), long-term availability cannot be guaranteed. The FCP4N60, with Active status, provides supply continuity for new designs.

Q: Are there compliance differences between the two parts?

A: The STP7N65M2 is confirmed ROHS3 compliant and REACH unaffected. The FCP4N60 compliance status is not specified in the provided data. Compliance verification with the FCP4N60 manufacturer is required for applications with regulatory requirements.

Q: What is the difference in on-state resistance between these parts?

A: The STP7N65M2 has Rds On of 1.15 Ohm at 2.5A, 10V. The FCP4N60 has Rds On of 1.2 Ohm at 2A, 10V. The difference is minimal, but the FCP4N60 measurement is taken at lower current, making direct comparison at identical conditions not possible from the provided specifications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message