STP75NS04Z Equivalent & Substitute Parts

Part Overview

The STP75NS04Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 33V drain-to-source voltage and 80A continuous drain current in a Through Hole TO-220 package. This device is part of the MESH OVERLAY™ III series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with active product status are necessary to maintain design continuity and ensure long-term supply chain reliability for new production runs and ongoing applications.

Substiute Parts

STP75NS04Z

STMicroelectronicsIn Stock: 3076STP75NS04Z Datasheet

Current PartRFQ

STP70NS04ZC

STMicroelectronicsIn Stock: 8301STP70NS04ZC Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP75NS04Z is based on strict electrical and mechanical parameter matching within the N-Channel MOSFET category. The following parameters define substitution eligibility:

Critical Matching Parameters:

• FET Type: N-Channel (required match)
• Drain to Source Voltage (Vdss): 33V (required match)
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc) (required match)
• Drive Voltage (Max Rds On): 10V (required match)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V (required match)
• Mounting Type: Through Hole (required match)
• Package / Case: TO-220-3 (required match)
• Operating Temperature Range: -55°C to 175°C (TJ) (required match)

Allowable Variation Parameters:

• Power Dissipation (Max): May exceed the original specification
• Gate Charge (Qg): May vary within acceptable limits
• Input Capacitance (Ciss): May vary within acceptable limits
• Vgs(th) (Max) @ Id: May vary within acceptable limits
• Vgs (Max): May differ in clamping specification

The STP70NS04ZC meets all critical matching parameters and is therefore a valid substitute for the obsolete STP75NS04Z.

Parameter Comparison

Engineering Selection Recommendations

The STP70NS04ZC is the recommended substitute for the obsolete STP75NS04Z based on the following engineering criteria:

Electrical Compatibility: The STP70NS04ZC maintains identical electrical specifications for all critical parameters: 33V Vdss, 80A continuous drain current, 10V drive voltage, and 11mOhm Rds(on). These parameters ensure direct functional equivalence in circuit applications.

Mechanical Compatibility: Both devices utilize the TO-220-3 package with Through Hole mounting, ensuring identical PCB footprint and thermal interface requirements.

Regulatory Compliance: The STP70NS04ZC carries ROHS3 Compliant and REACH Unaffected certifications, matching the compliance profile of the original part.

Product Status: The STP70NS04ZC holds Active product status, ensuring long-term availability and supply chain continuity compared to the Obsolete status of the STP75NS04Z.

Thermal Performance: The STP70NS04ZC provides enhanced power dissipation capability (180W vs. 110W), offering improved thermal margin in applications without requiring circuit modifications.

Parametric Variations: Minor variations in Gate Charge (58 nC vs. 50 nC) and Input Capacitance (1930 pF vs. 1860 pF) are within acceptable engineering tolerances and do not impact circuit functionality for standard switching applications.

Frequently Asked Questions (FAQ)

Q: Can the STP70NS04ZC be used as a direct replacement for the STP75NS04Z without circuit modifications?

A: Yes. The STP70NS04ZC meets all critical electrical and mechanical parameters of the STP75NS04Z. The identical Vdss, Id, Rds(on), and package specifications enable direct substitution in existing circuit designs.

Q: What is the significance of the higher power dissipation rating (180W vs. 110W) in the STP70NS04ZC?

A: The increased power dissipation rating indicates improved thermal performance and thermal management capability. This provides additional thermal margin in applications but does not require circuit changes. The device operates within the same electrical specifications.

Q: Are there any differences in gate drive requirements between these two parts?

A: Both devices require 10V drive voltage for maximum Rds(on) specification. The gate charge differs slightly (50 nC vs. 58 nC), which may result in marginally different switching times but does not affect gate drive circuit compatibility.

Q: Is the STP70NS04ZC available in the same packaging format?

A: Yes. Both devices use the TO-220-3 package with Through Hole mounting. PCB layouts and thermal interface designs require no modification.

Q: What is the impact of the different Vgs(th) measurement conditions?

A: The STP75NS04Z specifies Vgs(th) at 250µA, while the STP70NS04ZC specifies it at 1mA. Both measurements fall within the 4V maximum threshold voltage specification. This difference reflects different measurement methodologies and does not impact practical circuit operation.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the STP75NS04Z and STP70NS04ZC are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Q: Why is the STP75NS04Z classified as obsolete?

A: The STP75NS04Z has reached end-of-life status in STMicroelectronics' product portfolio. The STP70NS04ZC represents the active successor with equivalent electrical performance and enhanced thermal characteristics.

Q: Can the STP70NS04ZC handle the same current levels as the STP75NS04Z?

A: Yes. Both devices are rated for 80A continuous drain current at 25°C, ensuring identical current handling capability in circuit applications.