STP75N75F4 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STP75N75F4 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 75V drain-to-source voltage and 78A continuous drain current in the TO-220 through-hole package. This device is part of the DeepGATE™ and STripFET™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating packaging and availability constraints.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	78	A (Tc)
On-State Resistance (Rds On) @ 39A, 10V	11	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	76	nC
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the STP75N75F4 is determined by the following critical electrical parameters: drain-to-source voltage rating (Vdss), continuous drain current capacity (Id), on-state resistance (Rds On), and power dissipation capability. All substitute parts must operate within the same voltage class (75V nominal) and support equivalent or higher current ratings to ensure functional compatibility in the target application.

Substitute parts are grouped into two categories:

Parametric Equivalents: Parts with identical or near-identical electrical specifications, including the STP78N75F4, which shares the same voltage, current, and power ratings as the main part.

Functional Substitutes: Parts with compatible voltage ratings (75V class) and equal or superior current handling (78A or higher), including the STP100N8F6, AOT470, IRF2807ZPBF, and IRFB3607PBF. These parts maintain electrical compatibility while offering improved performance characteristics such as lower on-state resistance or higher power dissipation.

Lower-Voltage Alternatives: Parts rated at 55V to 60V (AOT2610L, AUIRF3205, TK40E06N1,S1X) are included for applications where voltage headroom permits, offering alternative sourcing options with comparable current and thermal performance.

Voltage-Elevated Alternatives: The STP100N8F6, rated at 80V, provides enhanced voltage margin for applications requiring additional safety headroom.

All substitute parts maintain the TO-220 through-hole package format and operate across the same temperature range (-55°C to 175°C). Compliance certifications (RoHS3, REACH) are consistent across all listed alternatives.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status	Package
STP75N75F4	STMicroelectronics	75	78	11 @ 39A, 10V	76 @ 10V	150	Obsolete	TO-220-3
STP78N75F4	STMicroelectronics	75	78	11 @ 39A, 10V	76 @ 10V	150	Obsolete	TO-220-3
STP100N8F6	STMicroelectronics	80	100	9 @ 50A, 10V	100 @ 10V	176	Active	TO-220-3
AOT470	Alpha & Omega Semiconductor Inc.	75	100	10.5 @ 30A, 10V	136 @ 10V	268	Active	TO-220-3
AOT2610L	Alpha & Omega Semiconductor Inc.	60	55	10.7 @ 20A, 10V	30 @ 10V	75	Active	TO-220-3
AUIRF3205	International Rectifier	55	75	8 @ 62A, 10V	146 @ 10V	200	Active	TO-220-3
IRF2807ZPBF	Infineon Technologies	75	75	9.4 @ 53A, 10V	110 @ 10V	170	Active	TO-220-3
IRFB3607PBF	Infineon Technologies	75	80	9 @ 46A, 10V	84 @ 10V	140	Not For New Designs	TO-220-3
IXTP70N075T2	IXYS	75	70	12 @ 25A, 10V	46 @ 10V	150	Active	TO-220-3
TK40E06N1,S1X	Toshiba Semiconductor and Storage	60	40	10.4 @ 20A, 10V	23 @ 10V	67	Active	TO-220-3

Engineering Selection Recommendations

Primary Equivalent: STP78N75F4 is the direct parametric equivalent to STP75N75F4, sharing identical electrical specifications and thermal performance. Both parts are classified as obsolete; however, STP78N75F4 maintains higher inventory availability (1500 pcs vs. 1128 pcs) and is suitable for direct replacement in existing designs.

Active Production Alternatives: For new designs or long-term production continuity, STP100N8F6 (STMicroelectronics, Active status) is the recommended primary substitute. This part operates at 80V (5V higher than the original specification), supports 100A continuous current (22A higher), and delivers 176W power dissipation (26W higher). The lower on-state resistance (9 mOhm vs. 11 mOhm) provides improved thermal efficiency.

Cross-Manufacturer Substitutes: IRF2807ZPBF (Infineon Technologies, Active status) and AOT470 (Alpha & Omega Semiconductor Inc., Active status) are functionally compatible alternatives rated at 75V with 75A and 100A continuous current respectively. Both maintain RoHS3 compliance and REACH unaffected status. IRF2807ZPBF offers 9.4 mOhm on-state resistance and 170W power dissipation. AOT470 provides the highest power dissipation (268W) among all substitutes, suitable for high-thermal-stress applications.

Voltage-Reduced Alternatives: AOT2610L and TK40E06N1,S1X are suitable only for applications where the 75V rating is not critical and 60V operation is acceptable. These parts offer lower gate charge and reduced input capacitance, beneficial for high-frequency switching applications.

Not Recommended for New Designs: IRFB3607PBF carries a "Not For New Designs" status and should be avoided in new product development, despite electrical compatibility.

All recommended substitutes maintain TO-220-3 through-hole packaging, -55°C to 175°C operating temperature range, RoHS3 compliance, and REACH unaffected status.

Frequently Asked Questions (FAQ)

Q: Can STP100N8F6 directly replace STP75N75F4 in existing designs?

A: STP100N8F6 is electrically compatible for direct replacement. The 80V rating (5V higher) provides additional voltage margin. The 100A current rating (22A higher) and 176W power dissipation (26W higher) exceed the original part's specifications. Pin configuration and TO-220-3 package are identical. Thermal performance improves due to lower on-state resistance (9 mOhm vs. 11 mOhm).

Q: What is the difference between parametric equivalents and functional substitutes?

A: Parametric equivalents (STP78N75F4) share identical electrical specifications with the original part, including voltage, current, resistance, and power ratings. Functional substitutes (STP100N8F6, AOT470, IRF2807ZPBF) maintain voltage compatibility and equal or superior current handling but may differ in secondary parameters such as gate charge or input capacitance. Both categories are suitable for replacement; parametric equivalents require no circuit analysis, while functional substitutes may benefit from thermal and switching-speed verification.

Q: Are lower-voltage alternatives (60V rated) suitable for 75V applications?

A: Lower-voltage alternatives such as AOT2610L and TK40E06N1,S1X are not suitable for applications requiring the full 75V rating. These parts are limited to 60V maximum drain-to-source voltage and will fail if exposed to voltages exceeding their rating. Use these alternatives only in applications where the circuit voltage is confirmed to remain below 60V.

Q: What compliance certifications apply to all substitute parts?

A: All listed substitute parts maintain RoHS3 compliance and REACH unaffected status, consistent with the original STP75N75F4. Moisture sensitivity level (MSL) is rated as 1 (Unlimited) for all parts except AUIRF3205, which carries vendor-undefined MSL. ECCN classification is EAR99 for all parts with specified ECCN data.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: On-state resistance directly determines conduction losses and heat generation. Lower Rds On values reduce power dissipation and improve efficiency. STP100N8F6 (9 mOhm) and IRFB3607PBF (9 mOhm) offer improved efficiency compared to STP75N75F4 (11 mOhm). IXTP70N075T2 (12 mOhm) exhibits slightly higher losses. For high-current applications, lower Rds On values reduce thermal stress and may eliminate the need for additional heat sinking.

Q: What is the significance of gate charge (Qg) in MOSFET selection?

A: Gate charge determines the energy required to switch the MOSFET on and off, directly affecting switching speed and driver circuit requirements. Lower gate charge (IXTP70N075T2 at 46 nC, TK40E06N1,S1X at 23 nC) enables faster switching and reduces driver power consumption. Higher gate charge (AOT470 at 136 nC, AUIRF3205 at 146 nC) requires more robust gate drivers but may offer improved noise immunity. The original STP75N75F4 specifies 76 nC, placing it in the mid-range.

Q: Is the TO-220-3 package identical across all substitute parts?

A: All listed substitute parts use the TO-220-3 through-hole package with identical pin configuration (Gate, Drain, Source). Physical dimensions and PCB footprints are standardized. Direct mechanical substitution is possible without PCB redesign. Thermal performance may vary due to differences in die size and internal construction, but mounting and cooling approaches remain unchanged.

Q: Why is STP100N8F6 recommended over IRFB3607PBF despite similar specifications?

A: STP100N8F6 carries Active product status, ensuring long-term availability and manufacturing support. IRFB3607PBF is classified as "Not For New Designs," indicating Infineon's intention to discontinue this part. For new product development and long-term production, STP100N8F6 provides supply chain security and ongoing technical support.

Q: Can multiple substitute parts be used interchangeably within the same production run?

A: Yes, parts within the same substitution category (e.g., STP100N8F6, AOT470, IRF2807ZPBF) are electrically compatible and can be used interchangeably provided they meet the application's voltage, current, and thermal requirements. However, production documentation should specify acceptable part numbers to maintain traceability and ensure consistent performance across units.

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