STP75N20 Equivalent & Substitute Parts

Part Overview

The STP75N20 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage with 75A continuous drain current at 25°C. This device is part of the STripFET™ series and is housed in a TO-220-3 through-hole package. The STP75N20 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical and mechanical compatibility while offering active product status and availability.

Substiute Parts

STP75N20
STMicroelectronicsIn Stock: 1037STP75N20 Datasheet
STP75N20
Current Part
STP75NF20
STMicroelectronicsIn Stock: 1751STP75NF20 Datasheet
STP75NF20
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 75 A (Tc)
On-State Resistance (Rds On Max) @ 37A, 10V 34 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 V
Gate Charge (Qg Max) @ 10V 84 nC
Power Dissipation (Max) 190 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Through Hole
Input Capacitance (Ciss Max) @ 25V 3260 pF
Maximum Gate Voltage (Vgs Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the STP75N20 is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 200V minimum
  • Continuous Drain Current (Id): 75A minimum at 25°C
  • On-State Resistance (Rds On): 34mOhm maximum at specified conditions
  • Gate Threshold Voltage (Vgs(th)): 4V maximum at 250µA
  • Power Dissipation: 190W minimum
  • Operating Temperature Range: -55°C to 150°C minimum
  • Package Type: TO-220-3 through-hole configuration
  • FET Type: N-Channel MOSFET technology

The STP75NF20 is identified as a direct equivalent substitute. This part maintains identical electrical specifications and operates within the same parameter envelope as the STP75N20. The primary distinction is product status: STP75NF20 is active, whereas STP75N20 is obsolete. Both parts are manufactured by STMicroelectronics and belong to the STripFET™ series.

Parameter Comparison

Parameter STP75N20 STP75NF20 Unit
Manufacturer STMicroelectronics STMicroelectronics
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 200 V
Continuous Drain Current (Id) @ 25°C 75 75 A (Tc)
Rds On (Max) @ 37A, 10V 34 34 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 4 V
Gate Charge (Qg Max) @ 10V 84 84 nC
Maximum Gate Voltage (Vgs Max) ±20 ±20 V
Input Capacitance (Ciss Max) @ 25V 3260 3260 pF
Power Dissipation (Max) 190 190 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
Series STripFET™ STripFET™
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Obsolete Active

Engineering Selection Recommendations

STP75NF20 as Primary Substitute:

The STP75NF20 is the recommended substitute for the obsolete STP75N20. Both parts are manufactured by STMicroelectronics and share identical electrical and thermal specifications. The STP75NF20 maintains full parameter equivalence across all critical operating conditions: 200V Vdss rating, 75A continuous drain current, 34mOhm on-state resistance, and 190W power dissipation capability.

Both parts comply with ROHS3 standards and carry REACH Unaffected status, ensuring regulatory compliance for new designs and production continuity. The STP75NF20 is currently in active production status with established supply chain availability, making it the appropriate choice for replacing the obsolete STP75N20 in existing applications.

The TO-220-3 through-hole package is identical between both parts, requiring no PCB layout modifications or thermal management redesign. Gate drive requirements, input impedance characteristics, and thermal performance remain unchanged, allowing direct substitution without circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can the STP75NF20 be used as a direct replacement for the STP75N20 without circuit modifications?

A: Yes. The STP75NF20 is electrically and mechanically equivalent to the STP75N20. All electrical parameters, including Vdss, Id, Rds On, gate charge, and power dissipation, are identical. The TO-220-3 package footprint is unchanged. No circuit redesign or PCB layout modification is required.

Q: What is the primary reason for substituting the STP75N20?

A: The STP75N20 is classified as obsolete. The STP75NF20 is the active equivalent part from STMicroelectronics, ensuring continued availability and supply chain support for new production and maintenance applications.

Q: Are there any differences in packaging between STP75N20 and STP75NF20?

A: Both parts use the TO-220-3 through-hole package. The primary packaging difference is that STP75NF20 is supplied in tube packaging, whereas STP75N20 was supplied in alternative packaging. The component footprint and thermal characteristics remain identical.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both STP75N20 and STP75NF20 are ROHS3 compliant and carry REACH Unaffected status. Moisture sensitivity level is 1 (Unlimited) for both parts. No compliance differences exist between the two parts.

Q: What are the critical electrical parameters that define substitution compatibility?

A: Substitution compatibility is determined by: Drain to Source Voltage (200V), Continuous Drain Current (75A @ 25°C), On-State Resistance (34mOhm @ 37A, 10V), Gate Threshold Voltage (4V @ 250µA), Gate Charge (84nC @ 10V), Power Dissipation (190W), and Operating Temperature Range (-55°C to 150°C). All these parameters must be met or exceeded by any substitute part.

Q: Can the STP75NF20 handle the same thermal load as the STP75N20?

A: Yes. Both parts have identical power dissipation ratings of 190W (Tc) and the same operating temperature range of -55°C to 150°C. Thermal management requirements and heat sink specifications remain unchanged.

Q: Is the gate drive voltage requirement the same for both parts?

A: Yes. Both parts operate with a maximum gate voltage (Vgs Max) of ±20V and have identical gate threshold voltage specifications of 4V maximum at 250µA. Gate drive circuits require no modification.

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