STP70N10F4 Equivalent & Substitute Parts

Part Overview

The STP70N10F4 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage and 65A continuous drain current in a TO-220-3 through-hole package. This device is part of the DeepGATE™ and STripFET™ series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	65	A (Tc)
On-State Resistance (Rds On) @ 30A, 10V	19.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	85	nC
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the STP70N10F4 is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-220-3 (through-hole)
Maximum Gate Voltage (Vgs): ±20V

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): Substitute must meet or exceed 65A at 25°C
On-State Resistance (Rds On): Lower or equivalent values ensure compatible switching performance
Gate Charge (Qg): Similar values maintain compatible gate drive requirements
Power Dissipation: Substitute must handle thermal loads within design specifications
Operating Temperature Range: Must support -55°C to 175°C minimum

Substitute parts are grouped into two categories based on drain current capability: parts meeting or exceeding the 65A specification (direct equivalents) and parts with lower current ratings (limited substitutes for reduced-load applications).

Parameter Comparison

Parameter	STP70N10F4	CSD19534KCS	FDP150N10	IRF3710PBF	IRF8010PBF	PSMN013-100PS,127	PSMN015-100P,127
Manufacturer	STMicroelectronics	Texas Instruments	onsemi	Infineon	Infineon	Nexperia	Nexperia
Vdss (V)	100	100	100	100	100	100	100
Id @ 25°C (A)	65 (Tc)	100 (Ta)	57 (Tc)	57 (Tc)	80 (Tc)	68 (Tc)	75 (Tc)
Rds On @ 10V (mOhm)	19.5 @ 30A	16.5 @ 30A	15 @ 49A	23 @ 28A	15 @ 45A	13.9 @ 15A	15 @ 25A
Vgs(th) @ 250µA (V)	4	3.4	4.5	4	4	4	4
Qg @ 10V (nC)	85	22.2	69	130	120	59	90
Power Dissipation (W)	150 (Tc)	118 (Tc)	110 (Tc)	200 (Tc)	260 (Tc)	170 (Tc)	300 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Obsolete	Obsolete
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Electrical Equivalence):

CSD19534KCS (Texas Instruments) provides the closest electrical match with 100A continuous drain current, exceeding the STP70N10F4 specification. This part maintains 100V Vdss, supports the full -55°C to 175°C operating range, and carries active product status with ROHS3 compliance. The lower Rds On (16.5 mOhm @ 30A) and reduced gate charge (22.2 nC) offer improved switching efficiency.

IRF8010PBF (Infineon Technologies) delivers 80A continuous drain current with superior power dissipation capability (260W). This HEXFET® series device maintains all critical voltage and temperature specifications, with active product status and ROHS3 compliance. The 15 mOhm Rds On provides efficient switching performance.

Secondary Substitutes (Active Status, Comparable Current Rating):

FDP150N10 (onsemi) offers 57A continuous drain current with PowerTrench® technology, providing active product status and ROHS3 compliance. The 15 mOhm Rds On and 110W power dissipation support most applications within the STP70N10F4 design envelope. Operating temperature range extends to 150°C (5°C below the original specification).

IRF3710PBF (Infineon Technologies) provides 57A continuous drain current with 200W power dissipation and active product status. The HEXFET® series design maintains full voltage and temperature specifications with ROHS3 compliance.

PSMN015-100P,127 (Nexperia) delivers 75A continuous drain current with the highest power dissipation rating (300W) among all substitutes. TrenchMOS™ technology and ROHS3 compliance are provided, though product status is obsolete.

Limited Substitutes (Reduced Current Rating):

PSMN013-100PS,127 (Nexperia) and AOT2910L (Alpha & Omega Semiconductor) have lower continuous drain current ratings (68A and 30A respectively) and are suitable only for applications where the full 65A specification is not required.

Compliance and Availability Considerations:

All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original part's regulatory requirements. CSD19534KCS, IRF8010PBF, FDP150N10, and IRF3710PBF carry active product status, ensuring long-term availability and supply chain stability. Inventory levels vary significantly, with IRF3710PBF showing the highest stock position (165,200 units).

Frequently Asked Questions (FAQ)

Q: Can the CSD19534KCS directly replace the STP70N10F4 in all applications?

A: The CSD19534KCS meets all mandatory electrical parameters (100V Vdss, N-Channel MOSFET, TO-220-3 package) and exceeds the drain current specification (100A vs. 65A). The lower gate charge (22.2 nC vs. 85 nC) requires verification that gate drive circuitry can accommodate faster switching transients. Operating temperature range matches the original specification (-55°C to 175°C).

Q: What is the difference between the IRF3710PBF and IRF8010PBF?

A: Both are Infineon HEXFET® series devices with 100V Vdss and active product status. The IRF8010PBF provides higher continuous drain current (80A vs. 57A) and greater power dissipation capability (260W vs. 200W). The IRF3710PBF has lower gate charge (130 nC vs. 120 nC), resulting in slightly faster switching. Selection depends on application current requirements and thermal management constraints.

Q: Why do some substitutes show lower operating temperature maximums?

A: The FDP150N10 specifies a maximum junction temperature of 150°C, compared to 175°C for the STP70N10F4. This 25°C difference may impact thermal margin in high-temperature applications. All other active substitutes (CSD19534KCS, IRF3710PBF, IRF8010PBF) maintain the full 175°C specification.

Q: Are the obsolete substitute parts (PSMN013-100PS,127 and PSMN015-100P,127) acceptable for new designs?

A: Obsolete parts carry supply chain risk and are not recommended for new production designs. These parts are suitable only for field replacements or legacy system maintenance where existing inventory is available. Active status parts (CSD19534KCS, IRF8010PBF, FDP150N10, IRF3710PBF) are preferred for new designs.

Q: How does gate charge affect circuit design when substituting?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The STP70N10F4 specifies 85 nC @ 10V. Substitutes range from 22.2 nC (CSD19534KCS) to 130 nC (IRF3710PBF). Lower gate charge reduces switching losses and allows faster switching speeds, but requires gate drive circuits capable of delivering the required current. Higher gate charge increases switching losses and may require gate drive circuit modifications.

Q: What is the significance of Rds On (on-state resistance) in substitution?

A: Rds On directly affects conduction losses and heat generation. The STP70N10F4 specifies 19.5 mOhm @ 30A, 10V. Most substitutes offer lower Rds On values (13.9 to 16.5 mOhm), reducing power dissipation. Lower Rds On improves efficiency but does not prevent substitution. Higher Rds On values would increase heat generation and require thermal design verification.

Q: Can the AOT2910L substitute for the STP70N10F4?

A: The AOT2910L has significantly lower continuous drain current (30A Tc vs. 65A Tc) and reduced power dissipation (50W Tc vs. 150W Tc). This part is suitable only for applications where the full 65A specification is not required. Electrical parameters (100V Vdss, N-Channel, TO-220-3 package) are compatible, but current capacity is insufficient for equivalent performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed carry ROHS3 compliance certification, matching the original STP70N10F4. All parts also maintain REACH unaffected status, ensuring regulatory compatibility for EU and global markets.

Q: What inventory considerations should guide substitute selection?

A: IRF3710PBF shows the highest inventory availability (165,200 units), providing supply security for high-volume applications. CSD19534KCS (1,905 units), FDP150N10 (13,918 units), and IRF8010PBF (21,300 units) offer adequate stock for most production requirements. Obsolete parts (PSMN013-100PS,127 and PSMN015-100P,127) have limited remaining inventory and should not be selected for new designs.

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