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STP6NK70Z Equivalent & Substitute Parts
Part Overview
The STP6NK70Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 700V drain-to-source voltage with 5A continuous drain current at 25°C. This device is part of the SuperMESH™ series and is housed in a TO-220-3 through-hole package. The STP6NK70Z is classified as obsolete, making identification of equivalent substitute parts essential for ongoing design support and component procurement. Substitute parts must maintain functional compatibility across voltage ratings, current handling, thermal characteristics, and package specifications to ensure direct replacement capability in existing circuit designs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 700 | V |
| Continuous Drain Current (Id) @ 25°C | 5 | A |
| On-State Resistance (Rds On Max) @ Id, Vgs | 1.8 @ 2.5A, 10V | Ohm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4.5 @ 100µA | V |
| Gate Charge (Qg Max) @ Vgs | 47 @ 10V | nC |
| Power Dissipation (Max) | 110 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-220-3 | Through Hole |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the STP6NK70Z is determined by the following critical parameters:
Voltage Rating Compatibility: The substitute part must support the application's maximum drain-to-source voltage requirement. The STP6NK70Z operates at 700V; substitute parts with lower voltage ratings (such as 620V) are suitable only for applications where the circuit design does not require the full 700V rating.
Current Handling Capacity: The continuous drain current rating must meet or exceed the circuit's maximum current demand. The STP6NK70Z is rated for 5A continuous drain current; substitute parts with equal or higher current ratings maintain functional equivalence.
On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Lower Rds On values indicate improved efficiency and reduced heat generation, making parts with superior Rds On characteristics suitable substitutes.
Package and Mounting: Both the main part and substitute must use identical package types (TO-220-3) and mounting methods (through-hole) to ensure mechanical and electrical compatibility with existing PCB layouts.
Compliance and Product Status: All substitute parts must maintain RoHS3 compliance and active product status to ensure long-term availability and regulatory adherence.
Parameter Comparison
| Parameter | STP6NK70Z (Main Part) | STP6N62K3 (Substitute) | Compatibility Notes |
|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | Same manufacturer ensures consistent quality and design philosophy |
| FET Type | N-Channel | N-Channel | Identical topology |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Identical technology platform |
| Drain to Source Voltage (Vdss) | 700V | 620V | Substitute rated 80V lower; suitable for applications not requiring full 700V rating |
| Continuous Drain Current (Id) @ 25°C | 5A | 5.5A | Substitute provides 10% higher current capacity |
| Drive Voltage (Max Rds On) | 10V | 10V | Identical gate drive voltage |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.5A, 10V | 1.2Ohm @ 2.8A, 10V | Substitute exhibits 33% lower on-state resistance, improving efficiency |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4.5V @ 100µA | 4.5V @ 50µA | Threshold voltage identical; substitute triggers at lower gate current |
| Gate Charge (Qg Max) @ Vgs | 47nC @ 10V | 34nC @ 10V | Substitute requires 28% less gate charge, enabling faster switching |
| Vgs (Max) | ±30V | ±30V | Identical maximum gate-source voltage rating |
| Input Capacitance (Ciss Max) @ Vds | 930pF @ 25V | 875pF @ 50V | Substitute exhibits lower input capacitance, reducing gate drive requirements |
| Power Dissipation (Max) | 110W | 90W | Substitute rated 20W lower; verify thermal design for applications near maximum dissipation |
| Operating Temperature Range | -55°C to 150°C | -55°C to 150°C | Identical operating temperature range |
| Package / Case | TO-220-3 | TO-220-3 | Identical package; direct mechanical replacement |
| Mounting Type | Through Hole | Through Hole | Identical mounting method |
| Series | SuperMESH™ | SuperMESH3™ | Substitute uses enhanced SuperMESH3™ technology |
| Product Status | Obsolete | Active | Substitute is actively manufactured and supported |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Both parts meet RoHS3 requirements |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Identical moisture sensitivity classification |
| REACH Status | REACH Unaffected | REACH Unaffected | Both parts comply with REACH regulations |
Engineering Selection Recommendations
For Direct Replacement in Existing Designs:
The STP6N62K3 serves as a direct substitute for the obsolete STP6NK70Z in applications where the circuit design operates below 620V drain-to-source voltage. The substitute part provides superior electrical characteristics, including lower on-state resistance (1.2Ohm versus 1.8Ohm), reduced gate charge (34nC versus 47nC), and lower input capacitance. These improvements result in enhanced efficiency and faster switching performance.
Voltage Rating Consideration:
Applications requiring the full 700V rating of the original STP6NK70Z cannot use the STP6N62K3 as a direct substitute due to its 620V maximum rating. In such cases, alternative high-voltage N-Channel MOSFETs from STMicroelectronics or other manufacturers must be evaluated based on identical voltage, current, and thermal specifications.
Thermal Design Verification:
The STP6N62K3 is rated for 90W maximum power dissipation compared to the STP6NK70Z's 110W rating. Designs operating near maximum power dissipation levels must be re-evaluated to ensure the substitute part's thermal characteristics remain within acceptable limits for the application's thermal management system.
Product Status and Availability:
The STP6N62K3 maintains active product status with STMicroelectronics, ensuring long-term availability, consistent manufacturing quality, and continued technical support. This contrasts with the obsolete status of the STP6NK70Z, making the substitute the recommended choice for new designs and ongoing production.
Compliance and Regulatory:
Both parts maintain ROHS3 compliance, REACH unaffected status, and identical moisture sensitivity levels (MSL 1), ensuring regulatory equivalence and compatibility with modern manufacturing and environmental standards.
Frequently Asked Questions (FAQ)
Q: Can the STP6N62K3 replace the STP6NK70Z in all applications?
A: The STP6N62K3 is a suitable substitute only for applications where the circuit design operates at or below 620V drain-to-source voltage. Applications requiring the full 700V rating of the original part cannot use this substitute. Verify the maximum voltage stress in your circuit design before selecting the substitute part.
Q: What are the performance advantages of the STP6N62K3 over the STP6NK70Z?
A: The STP6N62K3 offers three key performance improvements: (1) lower on-state resistance (1.2Ohm versus 1.8Ohm), reducing conduction losses; (2) reduced gate charge (34nC versus 47nC), enabling faster switching and lower gate drive power; (3) lower input capacitance (875pF versus 930pF), decreasing gate drive circuit complexity. These characteristics make the substitute part more efficient in switching applications.
Q: Are there any thermal design considerations when substituting the STP6N62K3?
A: Yes. The STP6N62K3 is rated for 90W maximum power dissipation compared to the STP6NK70Z's 110W rating. If your application operates near the original part's maximum power dissipation, thermal analysis of the substitute part is required to ensure the thermal management system remains adequate. The lower on-state resistance of the substitute typically results in lower overall power dissipation, which may offset the lower maximum rating.
Q: Are both parts available in the same package?
A: Yes. Both the STP6NK70Z and STP6N62K3 use the TO-220-3 through-hole package, enabling direct mechanical replacement on existing PCBs without layout modifications.
Q: What is the difference between the SuperMESH™ and SuperMESH3™ series?
A: The STP6NK70Z uses the original SuperMESH™ technology, while the STP6N62K3 uses the enhanced SuperMESH3™ technology. The SuperMESH3™ series represents an improved generation with optimized performance characteristics, including lower on-state resistance and reduced gate charge, as demonstrated in the parameter comparison.
Q: Are there any compliance or regulatory differences between the two parts?
A: No. Both parts maintain identical compliance status: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited moisture sensitivity). They are electrically and environmentally equivalent from a regulatory perspective.
Q: Why is the STP6NK70Z classified as obsolete?
A: The STP6NK70Z is obsolete due to the availability of superior replacement technology in the SuperMESH3™ series, represented by parts such as the STP6N62K3. STMicroelectronics has transitioned production to newer, more efficient designs that provide better performance characteristics while maintaining backward compatibility for most applications.
Q: Can I use the STP6N62K3 in a new design instead of the STP6NK70Z?
A: Yes. For new designs, the STP6N62K3 is the recommended choice. It provides superior performance, active product status with guaranteed long-term availability, and full compliance with current regulatory standards. Use the STP6NK70Z only if your specific application requires the full 700V rating.
Q: What should I verify before implementing the STP6N62K3 as a substitute?
A: Verify the following: (1) maximum drain-to-source voltage in your circuit does not exceed 620V; (2) thermal design accommodates the 90W maximum power dissipation rating; (3) gate drive circuit is compatible with the reduced gate charge requirement; (4) PCB layout and component placement are compatible with the TO-220-3 package. Conduct functional testing to confirm performance in your specific application.
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