STP6NK60Z N-Channel 600V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The STP6NK60Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the SuperMESH™ series. The STP6NK60Z carries a "Not For New Designs" product status, making identification of equivalent and substitute parts essential for ongoing production support and design alternatives.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ 3A, 10V	1.2	Ohm
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Gate Charge (Qg) @ 10V	46	nC
Vgs(th) @ 100µA	4.5	V

Substitute Part Grouping Explanation

Substitution of the STP6NK60Z is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (mandatory match)
Drain to Source Voltage (Vdss): 600V or higher (equal or greater rating required)
Continuous Drain Current (Id): 6A or higher (equal or greater rating required)
Mounting Type: Through Hole (mechanical compatibility)
Package / Case: TO-220-3 (physical form factor)
Operating Temperature Range: -55°C to 150°C (thermal compatibility)

Secondary Compatibility Factors:

Rds On (Max): Lower or equal values indicate improved performance
Power Dissipation: Equal or higher ratings provide thermal margin
Gate Charge (Qg): Lower values reduce switching losses
Vgs(th): Threshold voltage within compatible gate drive ranges

Substitute parts are grouped into two categories: Direct Substitutes (matching voltage and current ratings with active product status) and Similar Substitutes (meeting or exceeding electrical specifications with alternative voltage or current ratings).

Parameter Comparison

Parameter	STP6NK60Z	STP7N80K5	IRFB9N65APBF	IRFBC40APBF	IRFBC40LCPBF	IRFBC40PBF	IXFP10N80P
Manufacturer	STMicroelectronics	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	IXYS
Vdss (V)	600	800	650	600	600	600	800
Id @ 25°C (A)	6	6	8.5	6.2	6.2	6.2	10
Rds On (Max) (Ohm)	1.2 @ 3A	1.2 @ 3A	0.93 @ 5.1A	1.2 @ 3.7A	1.2 @ 3.7A	1.2 @ 3.7A	1.1 @ 5A
Power Dissipation (W)	110	110	167	125	125	125	300
Gate Charge (nC) @ 10V	46	13.4	48	42	39	60	40
Vgs(th) (V)	4.5 @ 100µA	5 @ 100µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	5.5 @ 2.5mA
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Affected	REACH Unaffected	REACH Affected	REACH Unaffected

Engineering Selection Recommendations

Direct Substitutes (Preferred for Equivalent Replacement):

STP7N80K5 — STMicroelectronics SuperMESH5™ series. This part maintains the same manufacturer ecosystem and shares identical continuous drain current (6A) and Rds On characteristics (1.2 Ohm @ 3A, 10V). The STP7N80K5 features higher Vdss rating (800V versus 600V), providing enhanced voltage margin. Gate charge is significantly reduced (13.4 nC versus 46 nC), resulting in lower switching losses. Product status is Active, supporting long-term availability. This substitute is optimal for applications where higher voltage headroom is acceptable and switching efficiency is prioritized.

Similar Substitutes (Functional Equivalents with Enhanced Specifications):

IRFBC40LCPBF — Vishay Siliconix. Matches the 600V Vdss and exceeds drain current specification (6.2A versus 6A). Rds On is identical (1.2 Ohm @ 3.7A, 10V). Gate charge is lower (39 nC), reducing switching losses. Power dissipation rating is higher (125W versus 110W), providing thermal margin. Product status is Active with REACH Unaffected compliance. This part is suitable for direct replacement in existing designs.

IRFBC40APBF — Vishay Siliconix. Identical voltage and current specifications to IRFBC40LCPBF with matching Rds On (1.2 Ohm @ 3.7A, 10V). Gate charge is 42 nC. Power dissipation is 125W. Product status is Active. REACH Status is Affected, requiring compliance verification in regulated applications.

IRFBC40PBF — Vishay Siliconix. Matches 600V Vdss and 6.2A drain current with identical Rds On (1.2 Ohm @ 3.7A, 10V). Gate charge is higher (60 nC), indicating increased switching losses compared to other Vishay variants. Vgs (Max) is ±20V versus ±30V on the original part. Product status is Active. REACH Status is Affected.

IRFB9N65APBF — Vishay Siliconix. Provides higher voltage rating (650V) and increased drain current (8.5A). Rds On is lower (0.93 Ohm @ 5.1A, 10V), indicating superior on-state performance. Power dissipation is significantly higher (167W), providing substantial thermal margin. Gate charge is comparable (48 nC). Product status is Active. This substitute is suitable for applications requiring enhanced current handling and thermal performance.

IXFP10N80P — IXYS HiPerFET™ Polar series. Provides 800V Vdss and 10A drain current, substantially exceeding original specifications. Rds On is lower (1.1 Ohm @ 5A, 10V). Power dissipation is significantly higher (300W). Gate charge is 40 nC. Product status is Active. This substitute is appropriate for high-current or high-temperature applications where performance margin is required.

Compliance Considerations:

All substitute parts are ROHS3 compliant. REACH status varies: STP7N80K5, IRFB9N65APBF, IRFBC40LCPBF, and IXFP10N80P are REACH Unaffected, while IRFBC40APBF and IRFBC40PBF are REACH Affected. Applications subject to REACH regulations must select parts with REACH Unaffected status or implement appropriate compliance documentation.

Frequently Asked Questions (FAQ)

Q: Can the STP7N80K5 be used as a direct replacement for the STP6NK60Z?

A: The STP7N80K5 is electrically compatible as a direct substitute. Both parts are N-Channel MOSFETs with identical continuous drain current (6A) and on-state resistance (1.2 Ohm @ 3A, 10V). The STP7N80K5 features higher Vdss (800V versus 600V), which provides additional voltage margin without affecting circuit operation in 600V applications. The STP7N80K5 has lower gate charge (13.4 nC versus 46 nC), reducing switching losses. Both parts share the same TO-220-3 package and operating temperature range. The STP7N80K5 has Active product status, ensuring long-term availability.

Q: What is the difference between the IRFBC40LCPBF, IRFBC40APBF, and IRFBC40PBF variants?

A: All three parts share identical electrical specifications: 600V Vdss, 6.2A drain current, and 1.2 Ohm Rds On. Differences exist in gate charge and maximum gate voltage. IRFBC40LCPBF has the lowest gate charge (39 nC) and is REACH Unaffected. IRFBC40APBF has 42 nC gate charge and is REACH Affected. IRFBC40PBF has the highest gate charge (60 nC) and lower maximum gate voltage (±20V versus ±30V) and is REACH Affected. For applications requiring minimal switching losses and REACH compliance, IRFBC40LCPBF is preferred.

Q: Is the IRFB9N65APBF suitable for applications designed for the STP6NK60Z?

A: The IRFB9N65APBF is functionally compatible with enhanced specifications. It provides higher voltage rating (650V versus 600V) and increased drain current (8.5A versus 6A). On-state resistance is lower (0.93 Ohm versus 1.2 Ohm), resulting in reduced conduction losses. Power dissipation capability is higher (167W versus 110W). These characteristics make the IRFB9N65APBF suitable for applications where improved thermal performance or higher current capacity is beneficial. The part maintains the same TO-220-3 package and operating temperature range.

Q: Why does the IXFP10N80P have significantly higher power dissipation than the original part?

A: The IXFP10N80P is rated for 10A continuous drain current and 800V Vdss, compared to 6A and 600V for the STP6NK60Z. Higher current and voltage ratings require larger die area and improved thermal design, resulting in higher power dissipation capability (300W versus 110W). This higher rating provides thermal margin for demanding applications but does not require higher power dissipation in circuits designed for the original part. The IXFP10N80P is suitable for applications requiring enhanced performance headroom.

Q: Are all substitute parts available in the same package as the STP6NK60Z?

A: All substitute parts listed are packaged in TO-220-3 through-hole configuration, matching the STP6NK60Z package. This ensures mechanical and thermal compatibility with existing PCB layouts and heat sink mounting arrangements. No package conversion or board redesign is required for substitution.

Q: What is the significance of REACH status in part selection?

A: REACH (Registration, Evaluation, Authorisation and Restriction of Chemicals) is a European Union regulation governing chemical substances in electrical components. Parts with REACH Unaffected status contain no restricted substances and are compliant with all REACH requirements. Parts with REACH Affected status may contain restricted substances and require compliance documentation for sale or use in regulated markets. For applications subject to REACH regulations, select parts with REACH Unaffected status: STP7N80K5, IRFB9N65APBF, IRFBC40LCPBF, or IXFP10N80P.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. Lower gate charge reduces switching time and switching losses, improving efficiency and reducing heat generation. The STP6NK60Z has 46 nC gate charge. The STP7N80K5 has significantly lower gate charge (13.4 nC), resulting in faster switching and lower losses. The IRFBC40LCPBF has 39 nC, and IXFP10N80P has 40 nC. For applications with high switching frequency or stringent efficiency requirements, parts with lower gate charge are preferred.

Q: Can substitute parts with higher Vdss ratings be used in 600V applications?

A: Parts with higher Vdss ratings (such as STP7N80K5 at 800V or IXFP10N80P at 800V) are fully compatible with 600V applications. Higher voltage ratings provide additional safety margin and do not affect circuit operation. The device will operate at the same voltage levels as the original part. Higher Vdss ratings are beneficial in applications with voltage transients or where design margin is required.

Q: What is the impact of lower Rds On on circuit performance?

A: On-state resistance (Rds On) determines conduction losses when the MOSFET is in the on state. Lower Rds On reduces power dissipation and heat generation. The STP6NK60Z has 1.2 Ohm Rds On. The IRFB9N65APBF has lower Rds On (0.93 Ohm), reducing conduction losses by approximately 22%. The IXFP10N80P has 1.1 Ohm, providing modest improvement. For high-current applications or where thermal management is critical, parts with lower Rds On are advantageous.

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