STP6NK50Z Equivalent & Substitute Parts

Part Overview

The STP6NK50Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 500V drain-to-source voltage with 5.6A continuous drain current at 25°C. The device is housed in a TO-220-3 package and is designed for through-hole mounting applications. The STP6NK50Z is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Substiute Parts

STP6NK50Z

STMicroelectronicsIn Stock: 1311STP6NK50Z Datasheet

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IRF830A

Vishay SiliconixIn Stock: 2365IRF830A Datasheet

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IRF830APBF

Vishay SiliconixIn Stock: 1458IRF830APBF Datasheet

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IRF840APBF

Vishay SiliconixIn Stock: 19023IRF840APBF Datasheet

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IRF840LCPBF

Vishay SiliconixIn Stock: 23731IRF840LCPBF Datasheet

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IRF840PBF

Vishay SiliconixIn Stock: 329788IRF840PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP6NK50Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): 500V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)
• Package / Case: TO-220-3 (exact match required)
• Mounting Type: Through Hole (exact match required)
• Operating Temperature Range: -55°C ~ 150°C (TJ) (exact match required)

Secondary Compatibility Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 5.6A
• Power Dissipation (Max): Equal to or greater than 90W (Tc)
• Drive Voltage (Max Rds On): 10V (standard gate drive voltage)
• Vgs (Max): ±20V or greater

The substitute parts identified below meet all primary criteria. Secondary parameters may vary within acceptable engineering tolerances for the application.

Parameter Comparison

Engineering Selection Recommendations

IRF830A and IRF830APBF: These parts provide direct electrical substitution with 500V Vdss and 5A continuous drain current. The IRF830A is RoHS non-compliant, while IRF830APBF is ROHS3 compliant. Both operate within the required temperature range and use TO-220-3 through-hole packaging. The IRF830A has lower power dissipation (74W) compared to the STP6NK50Z (90W), which may limit application in high-power scenarios. IRF830APBF is recommended for new designs requiring RoHS3 compliance.

IRF840APBF, IRF840LCPBF, and IRF840PBF: These parts exceed the electrical specifications of the STP6NK50Z with 8A continuous drain current and 125W power dissipation. All three are ROHS3 compliant and active products. IRF840LCPBF and IRF840PBF have higher gate charge values (39 nC and 63 nC respectively) compared to the original part (24.6 nC), which may affect switching characteristics. IRF840APBF maintains lower gate charge (38 nC) and is suitable for applications requiring minimal switching losses. IRF840PBF has the largest inventory availability and is the most widely stocked variant.

Compliance Considerations: All substitute parts maintain the -55°C to 150°C operating temperature range. The STP6NK50Z is ROHS3 compliant; IRF830A is non-compliant, while all IRF840 variants and IRF830APBF are ROHS3 compliant. For applications requiring regulatory compliance, IRF830APBF or any IRF840 variant is appropriate.

Frequently Asked Questions (FAQ)

Q: Can IRF830A be used as a direct replacement for STP6NK50Z? A: IRF830A meets all primary electrical and mechanical substitution criteria: 500V Vdss, N-Channel MOSFET, TO-220-3 package, and -55°C to 150°C operating range. However, IRF830A is RoHS non-compliant, whereas STP6NK50Z is ROHS3 compliant. For new designs, IRF830APBF is the compliant equivalent.

Q: What is the difference between IRF840APBF, IRF840LCPBF, and IRF840PBF? A: All three parts share identical electrical ratings: 500V Vdss, 8A continuous drain current, and 125W power dissipation. Primary differences are in gate charge specifications (38 nC, 39 nC, and 63 nC respectively) and input capacitance values. IRF840PBF has significantly higher inventory availability. Gate charge differences affect switching speed and power loss characteristics in the application circuit.

Q: Is the STP6NK50Z pin-compatible with substitute parts? A: Yes. All substitute parts use TO-220-3 through-hole packaging with identical pin configuration and spacing, ensuring mechanical and electrical pin compatibility.

Q: Can I use IRF840 variants in place of IRF830 variants? A: IRF840 variants provide higher current rating (8A vs. 5A) and power dissipation (125W vs. 74W). They are electrically compatible at the 500V Vdss level and use identical packaging. However, higher gate charge in some IRF840 variants may require circuit adjustments for optimal switching performance.

Q: Which substitute part has the best availability? A: IRF840PBF has the highest inventory with 329,719 pieces in stock, followed by IRF840LCPBF with 23,636 pieces. IRF830A and IRF830APBF have lower availability at 2,353 and 1,418 pieces respectively.

Q: Are all substitute parts suitable for high-temperature applications? A: Yes. All substitute parts maintain the same operating temperature range as the STP6NK50Z: -55°C to 150°C (TJ), ensuring thermal compatibility across the full application temperature spectrum.

Q: What is the impact of different Rds On values on circuit performance? A: The STP6NK50Z has Rds On of 1.2Ohm at 2.8A, 10V. IRF830 variants have 1.4Ohm at 3A, 10V, while IRF840 variants have 850mOhm at 4.8A, 10V. Lower Rds On reduces conduction losses and heat generation. IRF840 variants provide superior efficiency in high-current applications.