STP6N60M2 Equivalent & Substitute Parts

Part Overview

The STP6N60M2 is an N-Channel 600V 4.5A MOSFET manufactured by STMicroelectronics in the MDmesh™ II Plus series. This through-hole TO-220 device is designed for applications requiring moderate voltage and current handling with low on-resistance characteristics. The part is currently in active production status with 1300 pieces in stock.

Substitute parts are necessary when the primary part becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design flexibility permits selection from multiple qualified manufacturers offering equivalent electrical and mechanical performance within the same package class.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	4.5	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	1.2	Ohm @ 2.25A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	8	nC @ 10V
Power Dissipation (Max)	60	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution eligibility for the STP6N60M2 is determined by the following critical parameters:

Primary Compatibility Criteria:

FET Type: N-Channel MOSFET technology
Drain to Source Voltage (Vdss): 600V minimum rating
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C (TJ)
On-Resistance (Rds On): Comparable performance at specified gate voltage

Secondary Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 4.5A
Gate Threshold Voltage: Within ±1V of specified value
Power Dissipation capability: Sufficient for application requirements

Parts meeting these criteria are electrically and mechanically compatible for direct substitution in applications designed for the STP6N60M2. Substitute parts may exceed the primary specifications while maintaining backward compatibility.

Parameter Comparison

Parameter	STP6N60M2	CDM22010-650 SL	FCP4N60	IRFBC40APBF	IRFBC40LCPBF	IRFBC40PBF	IXFP10N80P
Manufacturer	STMicroelectronics	Central Semiconductor	Fairchild Semiconductor	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	IXYS
Vdss (V)	600	650	600	600	600	600	800
Id @ 25°C (A)	4.5	10	3.9	6.2	6.2	6.2	10
Rds On Max (Ohm)	1.2 @ 2.25A, 10V	1 @ 5A, 10V	1.2 @ 2A, 10V	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	1.1 @ 5A, 10V
Vgs(th) Max (V)	4 @ 250µA	4 @ 250µA	5 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	5.5 @ 2.5mA
Qg Max (nC)	8 @ 10V	20 @ 10V	16.6 @ 10V	42 @ 10V	39 @ 10V	60 @ 10V	40 @ 10V
Power Dissipation Max (W)	60	156	50	125	125	125	300
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compliance):

The IRFBC40LCPBF, IRFBC40APBF, and IRFBC40PBF from Vishay Siliconix are direct electrical equivalents with identical 600V Vdss and comparable on-resistance characteristics. All three variants are in active production with ROHS3 compliance. The IRFBC40LCPBF offers REACH Unaffected status, while IRFBC40APBF and IRFBC40PBF are REACH Affected. These parts provide higher continuous drain current (6.2A) and power dissipation (125W) compared to the STP6N60M2, enabling use in applications with increased thermal or current requirements.

Secondary Substitutes (Active Status, Voltage/Current Variations):

The FCP4N60 from Fairchild Semiconductor maintains the 600V Vdss rating with comparable on-resistance but provides slightly lower continuous drain current (3.9A) and power dissipation (50W). This part is suitable for applications where the STP6N60M2 specifications exceed design requirements. The IXFP10N80P from IXYS offers higher voltage (800V) and current (10A) ratings with significantly higher power dissipation (300W), suitable for designs requiring enhanced performance margins.

Not Recommended for Direct Substitution:

The CDM22010-650 SL from Central Semiconductor, while electrically compatible, carries obsolete product status and should not be selected for new designs or long-term supply chain planning.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC40PBF directly replace the STP6N60M2 in existing designs?

A: Yes. Both devices share identical 600V Vdss rating, TO-220-3 package configuration, and comparable on-resistance specifications at 10V gate drive. The IRFBC40PBF provides higher continuous drain current (6.2A versus 4.5A) and power dissipation (125W versus 60W), making it a backward-compatible substitute. Pin configuration and thermal characteristics are equivalent.

Q: What is the difference between IRFBC40PBF, IRFBC40APBF, and IRFBC40LCPBF?

A: All three variants are manufactured by Vishay Siliconix with identical electrical specifications: 600V Vdss, 6.2A continuous drain current, and 1.2 Ohm on-resistance. Differences exist in gate charge (60 nC, 42 nC, and 39 nC respectively) and input capacitance values. IRFBC40LCPBF has REACH Unaffected status, while the other variants are REACH Affected. Selection depends on specific gate drive circuit requirements and regulatory compliance needs.

Q: Is the FCP4N60 suitable as a substitute if my application requires lower current?

A: Yes. The FCP4N60 provides 3.9A continuous drain current, which is lower than the STP6N60M2 (4.5A). This part is appropriate only for applications where the design current requirement does not exceed 3.9A. The 600V Vdss rating and TO-220-3 package remain compatible. Verify that power dissipation (50W) is sufficient for your thermal design.

Q: Why is the CDM22010-650 SL listed if it is obsolete?

A: The CDM22010-650 SL is included in the substitute list because it meets the electrical and mechanical compatibility criteria. However, its obsolete product status makes it unsuitable for new designs or applications requiring long-term component availability. Use active-status alternatives for procurement planning.

Q: Can I use the IXFP10N80P in place of the STP6N60M2?

A: Yes, with design considerations. The IXFP10N80P is electrically compatible with higher voltage (800V) and current (10A) ratings. The TO-220-3 package and operating temperature range are identical. However, the higher gate charge (40 nC versus 8 nC) and input capacitance (2050 pF versus 232 pF) require verification that your gate drive circuit can accommodate these increased capacitive loads. The higher voltage rating provides additional design margin for overvoltage transients.

Q: What compliance certifications should I verify when selecting a substitute?

A: All listed substitutes are ROHS3 compliant and rated for -55°C to 150°C operating temperature. Verify REACH status based on your regulatory requirements: IRFBC40LCPBF is REACH Unaffected, while IRFBC40APBF and IRFBC40PBF are REACH Affected. The STP6N60M2, FCP4N60, CDM22010-650 SL, and IXFP10N80P are REACH Unaffected. All parts carry EAR99 ECCN classification.

Q: Are there package variations among these substitutes?

A: All listed substitutes use the TO-220-3 through-hole package configuration. Pin assignments and thermal characteristics are standardized across this package class. Physical dimensions and mounting requirements are equivalent, allowing direct mechanical substitution on existing PCB layouts.

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