STP62NS04Z Equivalent & Substitute Parts

Part Overview

The STP62NS04Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 33V drain-to-source voltage with 62A continuous drain current at 25°C. The device is housed in a TO-220-3 package and is designed for through-hole mounting applications requiring moderate power dissipation up to 110W. The STP62NS04Z is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

STP62NS04Z
STMicroelectronicsIn Stock: 41992STP62NS04Z Datasheet
STP62NS04Z
Current Part
STP70NS04ZC
STMicroelectronicsIn Stock: 8301STP70NS04ZC Datasheet
STP70NS04ZC
MFR Recommended
IPP015N04NGXKSA1
Infineon TechnologiesIn Stock: 1552IPP015N04NGXKSA1 Datasheet
IPP015N04NGXKSA1
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IRFB3004PBF
Infineon TechnologiesIn Stock: 2028IRFB3004PBF Datasheet
IRFB3004PBF
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PSMN022-30PL,127
Nexperia USA Inc.In Stock: 9036PSMN022-30PL,127 Datasheet
PSMN022-30PL,127
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PSMN2R2-40PS,127
Nexperia USA Inc.In Stock: 3417PSMN2R2-40PS,127 Datasheet
PSMN2R2-40PS,127
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 33 V
Continuous Drain Current (Id) @ 25°C 62 A
On-State Resistance (Rds On) @ 30A, 10V 15 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 47 nC
Power Dissipation (Max) 110 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the STP62NS04Z is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must be equal to or greater than 33V
  • Continuous Drain Current (Id): Must be equal to or greater than 62A at 25°C
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V nominal specification
  • Package Type: Must be TO-220-3 for mechanical compatibility
  • Mounting Type: Must be through-hole

Secondary Compatibility Parameters:

  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Power Dissipation: Higher ratings provide thermal margin
  • Operating Temperature Range: Must encompass -55°C to 175°C

Substitute parts are grouped into two categories: Manufacturer Recommended (direct replacement from STMicroelectronics) and Similar Alternatives (functionally equivalent parts from other manufacturers meeting or exceeding the primary criteria).

Parameter Comparison

Parameter STP62NS04Z STP70NS04ZC IPP015N04NGXKSA1 IRFB3004PBF PSMN022-30PL,127 PSMN2R2-40PS,127
Manufacturer STMicroelectronics STMicroelectronics Infineon Technologies Infineon Technologies Nexperia USA Inc. Nexperia USA Inc.
Vdss (V) 33 33 40 40 30 40
Id @ 25°C (A) 62 80 120 195 30 100
Rds On (mOhm) 15 @ 30A, 10V 11 @ 40A, 10V 1.5 @ 100A, 10V 1.75 @ 195A, 10V 22 @ 5A, 10V 2.1 @ 25A, 10V
Vgs(th) (V) 4 @ 250µA 4 @ 1mA 4 @ 200µA 4 @ 250µA 2.15 @ 1mA 4 @ 1mA
Qg @ 10V (nC) 47 58 250 240 9 130
Power Dissipation (W) 110 180 250 380 41 306
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active Active Obsolete Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Manufacturer Recommended Substitute: STP70NS04ZC

The STP70NS04ZC is the primary substitute for the STP62NS04Z. Both devices are manufactured by STMicroelectronics and share identical Vdss (33V) and gate threshold voltage specifications. The STP70NS04ZC provides enhanced performance with 80A continuous drain current (versus 62A), improved on-state resistance of 11mOhm (versus 15mOhm), and increased power dissipation capability of 180W (versus 110W). The device maintains the same operating temperature range and TO-220-3 package configuration. Product status is active, ensuring long-term availability and supply chain stability. RoHS3 compliance is maintained.

Alternative Substitutes for Higher Performance Requirements:

The IPP015N04NGXKSA1 (Infineon OptiMOS™) and IRFB3004PBF (Infineon HEXFET®) are functionally equivalent alternatives that exceed the electrical specifications of the STP62NS04Z. Both devices feature higher Vdss ratings (40V), significantly higher continuous drain currents (120A and 195A respectively), and substantially lower on-state resistance values. These devices are suitable for applications requiring enhanced thermal performance or higher current capacity. Both maintain active product status and RoHS3 compliance.

Lower-Performance Alternatives:

The PSMN022-30PL,127 (Nexperia) is not recommended as a direct substitute due to insufficient continuous drain current (30A versus 62A required) and lower Vdss rating (30V versus 33V). The PSMN2R2-40PS,127 (Nexperia) meets the minimum Vdss requirement (40V) and provides adequate continuous drain current (100A), making it suitable for applications where the STP62NS04Z specifications are met or exceeded. However, both Nexperia devices are classified as obsolete.

Compliance Considerations:

All substitute parts listed maintain RoHS3 compliance and REACH unaffected status, consistent with the original STP62NS04Z. All devices operate within the -55°C to 175°C temperature range. Selection should prioritize active product status devices (STP70NS04ZC, IPP015N04NGXKSA1, IRFB3004PBF) for new designs and long-term production support.

Frequently Asked Questions (FAQ)

Q: Can the STP70NS04ZC be used as a direct replacement for the STP62NS04Z?

A: Yes. The STP70NS04ZC is the manufacturer-recommended substitute. Both devices share identical Vdss (33V) and Vgs(th) (4V) specifications, operate within the same temperature range, and use the same TO-220-3 package. The STP70NS04ZC provides improved performance characteristics with higher current capacity and lower on-state resistance.

Q: What is the key difference between the STP62NS04Z and the higher-current alternatives (IPP015N04NGXKSA1, IRFB3004PBF)?

A: The primary differences are Vdss rating and continuous drain current. The IPP015N04NGXKSA1 and IRFB3004PBF feature 40V Vdss (versus 33V) and significantly higher continuous drain currents (120A and 195A respectively). These devices are suitable for applications requiring higher current handling or thermal margin, but they are not required for applications designed for the STP62NS04Z specifications.

Q: Are the Nexperia devices (PSMN022-30PL,127 and PSMN2R2-40PS,127) suitable substitutes?

A: The PSMN022-30PL,127 does not meet the minimum specifications (30A continuous current versus 62A required, and 30V Vdss versus 33V required). The PSMN2R2-40PS,127 meets the electrical requirements with 40V Vdss and 100A continuous current, but both Nexperia devices are classified as obsolete, limiting their suitability for new designs.

Q: Does package compatibility affect substitution?

A: Yes. All substitute parts listed use the TO-220-3 package with through-hole mounting, ensuring mechanical and thermal compatibility with the original STP62NS04Z. Package type is a mandatory substitution criterion.

Q: What is the significance of product status (Active vs. Obsolete) in selecting a substitute?

A: Product status indicates long-term availability and supply chain support. Active status devices (STP70NS04ZC, IPP015N04NGXKSA1, IRFB3004PBF) are recommended for new designs and ongoing production. Obsolete devices may have limited availability and should be avoided for new applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance and REACH unaffected status, consistent with the original STP62NS04Z.

Q: How does on-state resistance (Rds On) affect device selection?

A: Lower Rds On values reduce power dissipation and heat generation during operation. The STP70NS04ZC (11mOhm) provides improved efficiency compared to the STP62NS04Z (15mOhm). The Infineon devices feature significantly lower Rds On values (1.5mOhm and 1.75mOhm), providing superior thermal performance for high-current applications.

Q: Can gate charge (Qg) differences impact circuit design?

A: Yes. Gate charge affects switching speed and driver circuit requirements. The STP62NS04Z has a gate charge of 47nC. Substitute parts vary from 9nC (PSMN022-30PL,127) to 250nC (IPP015N04NGXKSA1). Higher gate charge values may require driver circuits with higher current capability or longer switching times.

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