STP60NF06FP N-Channel 60V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The STP60NF06FP is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ II series. This device is rated for 60V drain-to-source voltage with 30A continuous drain current at 25°C and 30W power dissipation. The part is packaged in TO-220FP through-hole configuration and is compliant with RoHS3 and REACH standards.

The STP60NF06FP carries a product status of "Not For New Designs," indicating that while the part remains available in inventory (1472 pieces), STMicroelectronics does not recommend its use in new circuit designs. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility while offering active product support from manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
Power Dissipation (Max)	30	W (Tc)
On-Resistance (Rds On) @ 30A, 10V	16	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	66	nC
Input Capacitance (Ciss) @ 25V	1810	pF
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220FP	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the STP60NF06FP is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id) @ 25°C: Must equal or exceed 30A (Tc)
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must encompass -55°C to 175°C
Mounting Type: Must be Through Hole
Package/Case: Must be compatible with TO-220 form factor

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Operating range compatibility
On-Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Affects switching speed and drive requirements
Input Capacitance (Ciss): Influences gate drive circuit design

The substitute parts identified below meet or exceed all primary criteria. Variations in secondary parameters reflect different design optimizations by alternative manufacturers while maintaining functional equivalence for the STP60NF06FP application space.

Parameter Comparison

Parameter	STP60NF06FP	AOTF2618L	IRF1010EZPBF	IRF1018EPBF	IRFB3206PBF	IRFIZ44GPBF	IRLIZ44GPBF	TK8R2A06PL,S4X
Manufacturer	STMicroelectronics	Alpha & Omega Semiconductor	Infineon Technologies	Infineon Technologies	Infineon Technologies	Vishay Siliconix	Vishay Siliconix	Toshiba Semiconductor
Vdss (V)	60	60	60	60	60	60	60	60
Id @ 25°C (A, Tc)	30	22	75	79	120	30	30	50
Power Dissipation (W, Tc)	30	23.5	140	110	300	48	48	36
Rds On (mOhm)	16 @ 30A, 10V	19 @ 20A, 10V	8.5 @ 51A, 10V	8.4 @ 47A, 10V	3 @ 75A, 10V	28 @ 18A, 10V	28 @ 18A, 5V	11.4 @ 8A, 4.5V
Vgs(th) @ 250µA (V)	4	2.5	4	4	4	4	2	2.5
Gate Charge Qg @ 10V (nC)	66	20	86	69	170	95	66	28.4
Ciss @ 25V (pF)	1810	950	2810	2290	6540	2500	3300	1990
Operating Temperature (°C, TJ)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	to 175
Package Type	TO-220FP	TO-220F	TO-220AB	TO-220AB	TO-220AB	TO-220-3	TO-220-3	TO-220SIS
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active	Active
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Electrical Equivalents (30A Continuous Drain Current):

The IRFIZ44GPBF and IRLIZ44GPBF from Vishay Siliconix provide the closest electrical match to the STP60NF06FP, both rated for 30A continuous drain current at 25°C with identical 60V Vdss rating. Both devices are in active product status with ROHS3 compliance. The IRFIZ44GPBF is packaged in TO-220-3 with tube packaging, while IRLIZ44GPBF is also TO-220-3 form factor. These parts are suitable for direct substitution in applications where the 30A current rating is a design requirement.

Higher Current Capacity Alternatives:

For applications where thermal margin or current headroom is beneficial, the IRF1010EZPBF (75A), IRF1018EPBF (79A), and IRFB3206PBF (120A) from Infineon Technologies offer progressively higher current ratings while maintaining 60V Vdss and full operating temperature range. All three are in active product status with ROHS3 compliance. These devices provide superior on-resistance characteristics and increased power dissipation capability. The IRFB3206PBF offers the lowest on-resistance (3 mOhm @ 75A, 10V) among all alternatives.

Moderate Current Alternative:

The TK8R2A06PL,S4X from Toshiba Semiconductor provides 50A continuous drain current, positioning it between the 30A direct equivalents and the higher-current Infineon options. This device features low gate charge (28.4 nC @ 10V) and is in active product status with ROHS3 compliance.

Lower Current Alternative:

The AOTF2618L from Alpha & Omega Semiconductor is rated for 22A continuous drain current (Tc), which falls below the STP60NF06FP specification. This part is suitable only for applications where the actual circuit current requirement is below 22A, despite the original design specification of 30A.

Compliance and Support:

All recommended substitute parts carry active product status from their respective manufacturers, ensuring continued availability and technical support. All alternatives are ROHS3 compliant and REACH unaffected, matching the environmental compliance profile of the original STP60NF06FP.

Frequently Asked Questions (FAQ)

Q: Can the IRFIZ44GPBF directly replace the STP60NF06FP in my circuit?

A: The IRFIZ44GPBF meets all primary electrical specifications: 60V Vdss, 30A continuous drain current, N-Channel MOSFET technology, and -55°C to 175°C operating range. Both devices use TO-220 form factor through-hole packaging. However, verify that your PCB layout and thermal management accommodate the specific package variant (TO-220-3 vs. TO-220FP). Gate threshold voltage differs (4V vs. 4V), and on-resistance is higher (28 mOhm vs. 16 mOhm), which may affect switching characteristics in high-frequency applications.

Q: Why do some substitute parts have higher current ratings than 30A?

A: Higher current-rated devices such as the IRF1010EZPBF (75A) and IRFB3206PBF (120A) provide design flexibility and thermal margin. These parts maintain the same 60V voltage rating and operating temperature range while offering lower on-resistance and greater power dissipation capability. They are suitable for applications where the circuit current may approach or exceed the original 30A specification, or where reduced heat generation is beneficial.

Q: What is the significance of the "Not For New Designs" status on the STP60NF06FP?

A: This status indicates that STMicroelectronics has discontinued active development and support for this part. While inventory remains available (1472 pieces), the manufacturer does not recommend its use in new circuit designs. Substitution with an active-status part ensures access to current technical documentation, manufacturing support, and long-term availability.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended substitute parts listed in this document carry ROHS3 compliance certification, matching the environmental compliance of the original STP60NF06FP. Verify compliance documentation for your specific application requirements.

Q: How do package variants (TO-220FP, TO-220F, TO-220AB, TO-220-3, TO-220SIS) affect substitution?

A: All substitute parts use TO-220 form factor through-hole mounting, ensuring mechanical compatibility with standard TO-220 PCB footprints. However, specific package variants may differ in tab isolation, pin configuration, and thermal characteristics. Verify that your PCB layout and thermal management design accommodate the specific package variant of your chosen substitute. Consult manufacturer datasheets for detailed package dimensions and thermal specifications.

Q: What is the impact of different gate threshold voltages on circuit operation?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage at which the MOSFET begins to conduct. The STP60NF06FP specifies 4V @ 250µA. Substitute parts range from 2V to 4V. Lower threshold voltages allow operation at lower gate drive voltages, which may reduce gate drive circuit complexity. Verify that your gate drive circuit can accommodate the threshold voltage of your chosen substitute and that switching characteristics remain acceptable for your application.

Q: Which substitute part offers the best on-resistance performance?

A: The IRFB3206PBF provides the lowest on-resistance at 3 mOhm @ 75A, 10V. This superior on-resistance reduces conduction losses and heat generation. However, this part is rated for 120A continuous current, significantly exceeding the original 30A specification. Select based on your actual circuit current requirements and thermal design constraints.

Q: Can I use the AOTF2618L if my circuit only draws 20A?

A: The AOTF2618L is rated for 22A continuous drain current (Tc), which provides minimal margin above a 20A circuit requirement. While technically functional, this substitution offers limited thermal headroom. For applications with 20A or lower current draw, the AOTF2618L is acceptable; however, higher-rated alternatives provide greater design margin.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message