STP60N55F3 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STP60N55F3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 55V drain-to-source voltage and 80A continuous drain current in a TO-220 through-hole package. This device is part of the STripFET™ III series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance, and thermal characteristics while preserving the through-hole TO-220 form factor.

Substiute Parts

STP60N55F3
STMicroelectronicsIn Stock: 15488STP60N55F3 Datasheet
STP60N55F3
Current Part
HUF75344P3
onsemiIn Stock: 21987HUF75344P3 Datasheet
HUF75344P3
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AOT2610L
Alpha & Omega Semiconductor Inc.In Stock: 1380AOT2610L Datasheet
AOT2610L
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AUIRF3205
International RectifierIn Stock: 23146AUIRF3205 Datasheet
AUIRF3205
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HUF75339P3
onsemiIn Stock: 28331HUF75339P3 Datasheet
HUF75339P3
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IRF1010EPBF
Infineon TechnologiesIn Stock: 51821IRF1010EPBF Datasheet
IRF1010EPBF
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IRF1010EZPBF
Infineon TechnologiesIn Stock: 15422IRF1010EZPBF Datasheet
IRF1010EZPBF
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IRF1010NPBF
Infineon TechnologiesIn Stock: 3531IRF1010NPBF Datasheet
IRF1010NPBF
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IRF2807ZPBF
Infineon TechnologiesIn Stock: 15325IRF2807ZPBF Datasheet
IRF2807ZPBF
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IRF3205PBF
Infineon TechnologiesIn Stock: 95134IRF3205PBF Datasheet
IRF3205PBF
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IRF3205ZPBF
Infineon TechnologiesIn Stock: 15440IRF3205ZPBF Datasheet
IRF3205ZPBF
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IRFZ44ZPBF
Infineon TechnologiesIn Stock: 1486IRFZ44ZPBF Datasheet
IRFZ44ZPBF
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IRFZ46NPBF
Infineon TechnologiesIn Stock: 61172IRFZ46NPBF Datasheet
IRFZ46NPBF
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IRFZ48NPBF
Infineon TechnologiesIn Stock: 37484IRFZ48NPBF Datasheet
IRFZ48NPBF
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IRL3705NPBF
Infineon TechnologiesIn Stock: 25207IRL3705NPBF Datasheet
IRL3705NPBF
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IRL3705ZPBF
International RectifierIn Stock: 71889IRL3705ZPBF Datasheet
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 80 A (Tc)
On-Resistance (Rds On) @ 32A, 10V 8.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 45 nC
Power Dissipation (Max) 110 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the STP60N55F3 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum Vdss of 55V. Parts rated at 60V or higher are acceptable as they provide equivalent or superior voltage withstand capability.

Current Capacity: Substitute parts must support a continuous drain current (Tc) of at least 75A to ensure functional equivalence. The STP60N55F3 operates at 80A; substitutes rated at 75A or higher maintain this performance envelope.

On-Resistance (Rds On): Maximum on-resistance at rated conditions must not exceed 12mOhm to preserve thermal and efficiency characteristics. The STP60N55F3 specifies 8.5mOhm at 32A, 10V.

Gate Threshold Voltage: Vgs(th) must remain within ±20V maximum gate voltage specification and maintain threshold values compatible with standard gate drive circuits (4V ±1V range).

Package and Mounting: All substitutes must use through-hole TO-220 or TO-220AB packaging to ensure mechanical and electrical compatibility with existing PCB layouts.

Thermal Performance: Power dissipation capability must support the application thermal requirements. Substitutes with equal or superior power dissipation ratings are acceptable.

Compliance: All substitute parts must maintain ROHS3 compliance and REACH unaffected status to meet regulatory requirements.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Power Diss. (W) Package Status
STP60N55F3 STMicroelectronics 55 80 8.5 @ 32A, 10V 4 @ 250µA 45 @ 10V 110 TO-220-3 Obsolete
HUF75344P3 onsemi 55 75 8 @ 75A, 10V 4 @ 250µA 210 @ 20V 285 TO-220-3 Active
AOT2610L Alpha & Omega Semiconductor 60 55 (Tc) 10.7 @ 20A, 10V 2.5 @ 250µA 30 @ 10V 75 (Tc) TO-220-3 Active
AUIRF3205 International Rectifier 55 75 8 @ 62A, 10V 4 @ 250µA 146 @ 10V 200 TO-220-3 Active
HUF75339P3 onsemi 55 75 12 @ 75A, 10V 4 @ 250µA 130 @ 20V 200 TO-220-3 Active
IRF1010EPBF Infineon Technologies 60 84 12 @ 50A, 10V 4 @ 250µA 130 @ 10V 200 TO-220-3 Not For New Designs
IRF1010EZPBF Infineon Technologies 60 75 8.5 @ 51A, 10V 4 @ 100µA 86 @ 10V 140 TO-220-3 Active
IRF1010NPBF Infineon Technologies 55 85 11 @ 43A, 10V 4 @ 250µA 120 @ 10V 180 TO-220-3 Not For New Designs
IRF2807ZPBF Infineon Technologies 75 75 9.4 @ 53A, 10V 4 @ 250µA 110 @ 10V 170 TO-220-3 Active
IRF3205PBF Infineon Technologies 55 110 8 @ 62A, 10V 4 @ 250µA 146 @ 10V 200 TO-220-3 Active
IRF3205ZPBF Infineon Technologies 55 75 6.5 @ 66A, 10V 4 @ 250µA 110 @ 10V 170 TO-220-3 Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for Replacement):

HUF75344P3 (onsemi) and AUIRF3205 (International Rectifier) provide the closest functional equivalence to the STP60N55F3. Both devices maintain 55V Vdss rating, support 75A continuous drain current, and deliver comparable on-resistance characteristics. HUF75344P3 offers superior power dissipation (285W) and is in active production status. AUIRF3205 provides 200W power dissipation with active availability. Both are ROHS3 compliant and REACH unaffected.

High-Performance Alternatives (Enhanced Specifications):

IRF3205PBF (Infineon Technologies) offers 110A continuous drain current at 55V with 8mOhm on-resistance, providing superior current handling while maintaining the same voltage rating. This device is actively produced and suitable for applications requiring higher current capacity. IRF3205ZPBF provides 75A at 55V with improved on-resistance of 6.5mOhm, delivering better thermal efficiency.

Extended Voltage Rating Options:

IRF1010EZPBF and IRF2807ZPBF provide 60V and 75V ratings respectively, offering additional voltage margin for applications with transient overvoltage conditions. IRF1010EZPBF maintains 75A current capacity at 60V with 8.5mOhm on-resistance. IRF2807ZPBF supports 75A at 75V with 9.4mOhm on-resistance. Both are actively produced.

Compliance and Production Status:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status. Devices marked as "Active" are suitable for new designs. Devices marked as "Not For New Designs" (IRF1010EPBF, IRF1010NPBF) are available but not recommended for new product development.

Thermal Considerations:

Applications requiring thermal performance equivalent to or exceeding the STP60N55F3 (110W) should select HUF75344P3 (285W), AUIRF3205 (200W), HUF75339P3 (200W), IRF1010EPBF (200W), IRF3205PBF (200W), or IRF3205ZPBF (170W). Lower power dissipation ratings (AOT2610L at 75W Tc, IRF1010EZPBF at 140W) are suitable for applications with reduced thermal loads.

Frequently Asked Questions (FAQ)

Q: Can I directly replace STP60N55F3 with HUF75344P3 without circuit modifications?

A: Yes. HUF75344P3 maintains identical 55V Vdss rating, supports 75A continuous drain current (compared to 80A), and operates within the same gate voltage and threshold specifications. The TO-220-3 package is mechanically and electrically compatible. No circuit modifications are required.

Q: What is the difference between IRF3205PBF and IRF3205ZPBF?

A: Both devices share the same 55V Vdss rating and 55V base part number. IRF3205PBF supports 110A continuous drain current with 8mOhm on-resistance at 62A. IRF3205ZPBF supports 75A continuous drain current with superior 6.5mOhm on-resistance at 66A. Selection depends on application current requirements and thermal constraints.

Q: Why is AOT2610L listed as a substitute if it only supports 55A continuous drain current?

A: AOT2610L is included as a similar substitute for applications where 55A continuous drain current (Tc) is sufficient. It operates at 60V Vdss, providing additional voltage margin. However, for applications requiring the full 80A capacity of the STP60N55F3, higher-current alternatives such as HUF75344P3, AUIRF3205, or IRF3205PBF are more appropriate.

Q: Are there any gate drive compatibility concerns when substituting these parts?

A: All substitute parts maintain gate threshold voltage (Vgs(th)) specifications within the 4V ±1V range and support ±20V maximum gate voltage. Existing gate drive circuits designed for the STP60N55F3 are compatible with all listed substitutes. Gate charge values vary (45nC to 210nC), which may affect switching speed but does not prevent substitution.

Q: Can I use IRF2807ZPBF (75V rating) in place of STP60N55F3 (55V rating)?

A: Yes. IRF2807ZPBF provides a higher voltage rating (75V) while maintaining 75A continuous drain current and comparable on-resistance (9.4mOhm). The elevated voltage rating provides additional safety margin for transient overvoltage conditions. The device is pin-compatible in TO-220-3 packaging and is actively produced.

Q: What is the significance of "Not For New Designs" status for IRF1010EPBF and IRF1010NPBF?

A: Devices marked "Not For New Designs" are in production but not recommended for new product development. These parts may have limited long-term availability or are being phased out in favor of newer alternatives. For new designs, select from devices with "Active" status such as HUF75344P3, AUIRF3205, IRF1010EZPBF, IRF3205PBF, or IRF3205ZPBF.

Q: How do I determine which substitute is best for my application?

A: Evaluate based on three criteria: (1) Current requirement—if your application requires 80A, select IRF1010EPBF (84A) or IRF3205PBF (110A); if 75A is sufficient, select HUF75344P3, AUIRF3205, or IRF3205ZPBF. (2) Thermal budget—select devices with power dissipation ratings matching or exceeding your thermal requirements. (3) Production status—prioritize "Active" devices for new designs to ensure long-term availability.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and use.

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