STP5NB40 MOSFET N-Channel 400V 4.7A Equivalent & Substitute Parts

Part Overview

The STP5NB40 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 400V drain-to-source voltage with 4.7A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the PowerMESH™ series. The product is currently listed as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the transition from obsolete to active product status.

Substiute Parts

STP5NB40

STMicroelectronicsIn Stock: 6509STP5NB40 Datasheet

Current PartRFQ

IXTP3N50D2

IXYSIn Stock: 1376IXTP3N50D2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP5NB40 is evaluated based on the following critical parameters that define functional equivalence:

Mandatory Compatibility Criteria:

• FET Type: N-Channel topology
• Package / Case: TO-220-3 through-hole configuration
• Mounting Type: Through Hole
• RoHS Status: ROHS3 Compliant
• Technology: MOSFET (Metal Oxide)

Electrical Performance Criteria:

• Drain to Source Voltage (Vdss): Minimum 400V (equal or higher rating acceptable)
• Current - Continuous Drain (Id) @ 25°C: Minimum 4.7A (equal or higher rating acceptable)
• Power Dissipation (Max): Minimum 80W (equal or higher rating acceptable)
• Rds On (Max): Lower or equal values indicate improved performance
• Operating Temperature: Maximum 150°C (equal or higher rating acceptable)

The IXTP3N50D2 qualifies as a substitute part based on these criteria. While it operates as a depletion-mode device (versus the enhancement-mode STP5NB40), it meets or exceeds all mandatory electrical and mechanical compatibility parameters.

Parameter Comparison

Engineering Selection Recommendations

Primary Consideration: Product Status

The STP5NB40 is classified as obsolete. The IXTP3N50D2 is an active product with current manufacturing support and availability. Selection of the IXTP3N50D2 ensures access to ongoing supply, technical documentation, and manufacturer support.

Compliance and Certification

Both the STP5NB40 and IXTP3N50D2 are ROHS3 compliant and REACH unaffected, meeting regulatory requirements for electronic component deployment in regulated markets.

Electrical Performance Trade-offs

The IXTP3N50D2 provides higher voltage rating (500V versus 400V) and higher power dissipation capability (125W versus 80W), offering design margin in high-voltage applications. However, the continuous drain current rating is lower (3A versus 4.7A), which may require circuit redesign in current-limited applications. The IXTP3N50D2 operates as a depletion-mode device, requiring different gate drive considerations compared to the enhancement-mode STP5NB40.

Mechanical Compatibility

Both devices use identical TO-220-3 through-hole packaging, ensuring direct mechanical substitution without PCB layout modification.

Frequently Asked Questions (FAQ)

Q: Can the IXTP3N50D2 directly replace the STP5NB40 in all applications?

A: Direct mechanical substitution is possible due to identical TO-220-3 packaging. Electrical substitution depends on application requirements. The IXTP3N50D2 has lower continuous drain current (3A versus 4.7A) and operates as a depletion-mode device, requiring gate drive circuit verification. Higher voltage rating (500V) and power dissipation (125W) provide design margin in voltage-limited applications.

Q: What is the primary difference between the STP5NB40 and IXTP3N50D2?

A: The STP5NB40 is an enhancement-mode N-Channel MOSFET with 400V rating and 4.7A continuous current. The IXTP3N50D2 is a depletion-mode N-Channel MOSFET with 500V rating and 3A continuous current. Depletion-mode operation requires different gate bias conditions compared to enhancement-mode devices.

Q: Is the IXTP3N50D2 suitable for applications requiring 4.7A continuous current?

A: The IXTP3N50D2 is rated for 3A continuous drain current at 25°C, which is below the STP5NB40 specification of 4.7A. Applications requiring sustained 4.7A operation must evaluate whether the lower current rating is acceptable or if alternative parts with higher current specifications are necessary.

Q: Are there packaging considerations when substituting these parts?

A: Both devices use TO-220-3 through-hole packaging with identical pin configuration and mechanical footprint. No PCB layout changes are required for mechanical substitution. Thermal management considerations should account for the different power dissipation ratings and operating conditions.

Q: What is the impact of the higher gate charge in the IXTP3N50D2?

A: The IXTP3N50D2 has higher gate charge (40 nC @ 5V versus 20 nC @ 10V), resulting in longer switching times and higher gate drive power requirements. Gate drive circuits must be evaluated to ensure adequate current sourcing capability and switching frequency compatibility.

Q: Are both parts compliant with current regulatory standards?

A: Yes. Both the STP5NB40 and IXTP3N50D2 are ROHS3 compliant and REACH unaffected, meeting regulatory requirements for electronic component use in regulated markets.