STP5N60M2 Equivalent & Substitute Parts

Part Overview

The STP5N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 3.7A continuous drain current at 25°C. This device is part of the MDmesh™ II Plus series and is housed in a TO-220-3 through-hole package. The component is currently in active production status and is RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the same package type and mounting configuration, while maintaining compliance with industry standards and regulatory requirements. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements necessitate alternative component sources.

Key Parameters

Parameter	STP5N60M2
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	3.7 A (Tc)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 1.85A, 10V
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 10 V
Power Dissipation (Max)	45 W (Tc)
Operating Temperature (TJ)	150°C
Package / Case	TO-220-3
Mounting Type	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of N-Channel MOSFETs is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) rating must equal or exceed the application requirement
Continuous drain current (Id) must meet or exceed the circuit demand
On-state resistance (Rds On) must be compatible with thermal and efficiency requirements
Gate charge (Qg) affects switching speed and driver requirements
Power dissipation capability must support the thermal load

Mechanical Compatibility Criteria:

Package type must be TO-220-3 through-hole configuration
Mounting type must be through-hole
Pin configuration must match TO-220-3 standard

Regulatory Compliance:

RoHS3 compliance status
REACH compliance status
Moisture Sensitivity Level (MSL)

The identified substitute parts (AOT8N80L and IXFP7N80P) share the same TO-220-3 package and through-hole mounting configuration. Both substitutes feature higher voltage ratings (800V) and higher current ratings (7.4A and 7A respectively) compared to the STP5N60M2, making them suitable for applications where the STP5N60M2 specifications are met or exceeded.

Parameter Comparison

Parameter	STP5N60M2	AOT8N80L	IXFP7N80P
Manufacturer	STMicroelectronics	Alpha & Omega Semiconductor Inc.	IXYS
Drain to Source Voltage (Vdss)	600 V	800 V	800 V
Current - Continuous Drain (Id) @ 25°C	3.7 A (Tc)	7.4 A (Tc)	7 A (Tc)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 1.85A, 10V	1.63 Ohm @ 4A, 10V	1.44 Ohm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 10 V	32 nC @ 10 V	32 nC @ 10 V
Power Dissipation (Max)	45 W (Tc)	245 W (Tc)	200 W (Tc)
Operating Temperature (TJ)	150°C	-55°C ~ 150°C	-55°C ~ 150°C
Package / Case	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Not For New Designs	Active

Engineering Selection Recommendations

STP5N60M2 (Primary Component)

The STP5N60M2 maintains active production status and is recommended for new designs requiring 600V/3.7A specifications. This component offers the lowest gate charge (4.5 nC) among the three options, resulting in faster switching characteristics and reduced driver power requirements. RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) support standard manufacturing and storage conditions.

AOT8N80L (Substitute - Limited Application)

The AOT8N80L is designated as "Not For New Designs" and should be used only in legacy system maintenance or when existing inventory must be consumed. While this device provides higher voltage (800V) and current (7.4A) ratings with superior power dissipation capability (245W), the product status restriction limits its use to replacement and repair applications. The significantly higher gate charge (32 nC) requires driver circuit evaluation for compatibility.

IXFP7N80P (Preferred Substitute)

The IXFP7N80P is the recommended substitute for applications where the STP5N60M2 becomes unavailable. This device maintains active production status and provides 800V/7A ratings with 200W power dissipation. The gate charge specification (32 nC) is identical to the AOT8N80L, requiring the same driver circuit considerations. The IXFP7N80P offers a balanced performance profile with extended operating temperature range (-55°C to 150°C) and RoHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can the AOT8N80L or IXFP7N80P be used as direct replacements for the STP5N60M2?

A: Both devices share the TO-220-3 package and through-hole mounting configuration, enabling physical and electrical substitution in circuits designed for 600V/3.7A operation. The higher voltage and current ratings of both substitutes ensure they meet or exceed the STP5N60M2 specifications. However, the significantly higher gate charge (32 nC versus 4.5 nC) requires verification that the gate driver circuit can supply the increased charge without exceeding maximum gate voltage limits (±25V for STP5N60M2, ±30V for substitutes).

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge directly affects switching speed and driver power dissipation. The STP5N60M2 requires 4.5 nC of charge to reach full conduction, while both substitutes require 32 nC. This sevenfold increase means the gate driver must supply more current during switching transitions, potentially increasing switching losses and driver power consumption. Applications with high switching frequencies or current-limited gate drivers require detailed analysis before substitution.

Q: Are there compliance or regulatory differences between these parts?

A: All three devices are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with HTSUS code 8541.29.0095. Moisture sensitivity level is MSL 1 (unlimited) for all parts, indicating no special storage or handling requirements. No regulatory barriers exist to substitution from a compliance perspective.

Q: Why is the AOT8N80L marked "Not For New Designs"?

A: This designation indicates the manufacturer has discontinued active development and recommends against using this part in new product designs. While the device remains available in inventory (3384 pieces), it is intended only for legacy system support, repair, and maintenance applications. New designs should utilize the IXFP7N80P or the primary STP5N60M2.

Q: What are the thermal considerations when substituting these parts?

A: The STP5N60M2 is rated for 45W maximum power dissipation, while both substitutes support significantly higher dissipation (245W for AOT8N80L, 200W for IXFP7N80P). In applications operating near the STP5N60M2 thermal limit, substitution with higher-rated devices provides thermal margin. However, the higher on-state resistance of the AOT8N80L (1.63 Ohm) compared to the IXFP7N80P (1.44 Ohm) results in greater conduction losses at equivalent current levels.

Q: How do input capacitance differences affect circuit design?

A: The STP5N60M2 has input capacitance (Ciss) of 165 pF at 100V, while both substitutes have significantly higher capacitance (1650 pF for AOT8N80L and 1890 pF for IXFP7N80P at 25V). Higher input capacitance increases the charge required for voltage transitions and may affect gate driver slew rate performance. Circuits with marginal gate driver capability require re-evaluation before substitution.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message