STP50NE08 Equivalent & Substitute Parts

Part Overview

The STP50NE08 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 80V drain-to-source voltage and 50A continuous drain current in a Through Hole TO-220 package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 150W maximum power dissipation and operates across a junction temperature range up to 175°C, suitable for general-purpose switching applications requiring moderate voltage and current handling.

Substiute Parts

STP50NE08

STMicroelectronicsIn Stock: 15341STP50NE08 Datasheet

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AUIRF540Z

Infineon TechnologiesIn Stock: 3644AUIRF540Z Datasheet

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DMNH10H028SCT

Diodes IncorporatedIn Stock: 4390DMNH10H028SCT Datasheet

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PSMN017-80PS,127

Nexperia USA Inc.In Stock: 6937PSMN017-80PS,127 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP50NE08 is determined by the following critical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel (required match)
• Package / Case: TO-220-3 (mechanical and thermal interface requirement)
• Drain to Source Voltage (Vdss): Minimum 80V (voltage rating must equal or exceed original)
• Continuous Drain Current (Id): Minimum 50A (current capacity must equal or exceed original)
• Gate Threshold Voltage (Vgs(th)): 4V nominal (gate drive compatibility)
• Drive Voltage: 10V (standard gate drive voltage)
• Maximum Junction Temperature: 175°C (thermal operating range)

Secondary Compatibility Parameters:

• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values improve switching speed
• Power Dissipation (Max): Higher values provide thermal margin

Substitute parts must maintain electrical compatibility within the TO-220-3 package form factor and support the same gate drive voltage and threshold characteristics. Parts with higher voltage ratings, equal or greater current ratings, and equivalent or superior thermal characteristics are considered suitable substitutes.

Parameter Comparison

Engineering Selection Recommendations

PSMN017-80PS,127 (Nexperia USA Inc.)

This part provides the closest electrical match to the STP50NE08, with identical 80V/50A ratings and TO-220-3 package compatibility. The PSMN017-80PS,127 delivers superior on-resistance performance (17mOhm versus 24mOhm) and significantly lower gate charge (26nC versus 110nC), resulting in reduced switching losses and improved thermal efficiency. However, both the main part and this substitute are classified as Obsolete. The PSMN017-80PS,127 achieves ROHS3 compliance, addressing environmental regulatory requirements where applicable.

DMNH10H028SCT (Diodes Incorporated)

This part is rated for 100V/60A with TO-220-3 package compatibility and Active product status. The higher voltage and current ratings provide design margin above the original specification. The DMNH10H028SCT carries AEC-Q101 automotive qualification and ROHS3 compliance. Gate charge is 31.9nC, lower than the main part, supporting improved switching performance. This device is suitable for applications requiring higher reliability classification or automotive-grade components.

AUIRF540Z (Infineon Technologies)

This part features 100V/36A ratings with Active product status and ROHS3 compliance. The voltage rating exceeds the original specification; however, the continuous drain current (36A) falls below the 50A requirement of the STP50NE08. The AUIRF540Z is not suitable for applications requiring the full 50A continuous current capacity. This substitute is applicable only where design current requirements are 36A or lower.

Recommendation Summary:

For direct replacement in existing designs, the PSMN017-80PS,127 is the primary equivalent, offering identical electrical specifications with improved performance characteristics. For new designs or applications requiring active product status and higher reliability, the DMNH10H028SCT is the preferred substitute. The AUIRF540Z is applicable only for current-limited applications below 36A.

Frequently Asked Questions (FAQ)

Q: Can the AUIRF540Z replace the STP50NE08 in all applications?

A: No. The AUIRF540Z is rated for 36A continuous drain current, which is below the 50A specification of the STP50NE08. This substitute is suitable only for applications where the design current requirement does not exceed 36A at 25°C.

Q: What is the primary advantage of the PSMN017-80PS,127 over the STP50NE08?

A: The PSMN017-80PS,127 maintains identical voltage and current ratings (80V/50A) while delivering lower on-resistance (17mOhm versus 24mOhm) and significantly lower gate charge (26nC versus 110nC). These improvements reduce power dissipation and switching losses. Both parts are classified as Obsolete.

Q: Why is the DMNH10H028SCT rated for higher voltage and current than the STP50NE08?

A: The DMNH10H028SCT is rated for 100V/60A, exceeding the 80V/50A specification of the STP50NE08. Higher ratings provide design margin and thermal headroom in applications. The higher voltage rating ensures the device operates safely in circuits with transient overvoltage conditions. The higher current rating accommodates applications with peak current demands above 50A.

Q: Are all substitute parts compatible with the same gate drive circuit as the STP50NE08?

A: Yes. All substitute parts listed share the same gate threshold voltage (4V nominal) and 10V drive voltage specification as the STP50NE08. Gate drive circuits designed for the original part are compatible with these substitutes without modification.

Q: What is the significance of the TO-220-3 package specification?

A: The TO-220-3 package is a Through Hole form factor with three leads (Gate, Drain, Source). This package provides mechanical compatibility with existing PCB layouts and thermal interface requirements. All substitute parts maintain this package specification, ensuring direct pin-compatible replacement without PCB redesign.

Q: Does the lower gate charge of substitute parts affect circuit performance?

A: Lower gate charge (Qg) reduces the energy required to switch the transistor on and off, resulting in lower switching losses and reduced heat generation. The PSMN017-80PS,127 (26nC) and DMNH10H028SCT (31.9nC) exhibit significantly lower gate charge than the STP50NE08 (110nC), improving overall circuit efficiency.

Q: Which substitute part is recommended for new designs?

A: The DMNH10H028SCT is recommended for new designs due to its Active product status, ROHS3 compliance, and AEC-Q101 automotive qualification. This part provides long-term availability and meets modern environmental and reliability standards. The PSMN017-80PS,127, while electrically superior, is classified as Obsolete and may face future availability constraints.

Q: Can substitute parts be used in applications with operating temperatures below 0°C?

A: The STP50NE08 specifies a maximum operating temperature of 175°C without a minimum temperature rating. The PSMN017-80PS,127, DMNH10H028SCT, and AUIRF540Z all specify operating temperature ranges of -55°C to 175°C, providing extended low-temperature capability. These substitutes are suitable for applications requiring operation below 0°C.

Q: What is the impact of different Rds On specifications among substitute parts?

A: On-resistance (Rds On) directly affects power dissipation and heat generation. Lower Rds On values reduce I²R losses during conduction. The PSMN017-80PS,127 (17mOhm) exhibits the lowest on-resistance, followed by AUIRF540Z (26.5mOhm) and DMNH10H028SCT (28mOhm), compared to the STP50NE08 (24mOhm). Lower on-resistance improves thermal efficiency and reduces cooling requirements.