STP4NK80Z N-Channel 800V 3A MOSFET Equivalent & Substitute Parts

Part Overview

The STP4NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 3A continuous drain current at 25°C. This device operates in the SuperMESH™ series and is housed in a TO-220-3 through-hole package. The part is currently active in production with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or when application parameters permit operation within the electrical and mechanical specifications of alternative devices. Substitution is valid only when the candidate part meets or exceeds the minimum electrical requirements of the original design specification.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	800	V	Maximum rating
Continuous Drain Current (Id)	3	A	@ 25°C (Tc)
On-State Resistance (Rds On Max)	3.5	Ω	@ 1.5A, 10V Vgs
Gate Threshold Voltage (Vgs(th) Max)	4.5	V	@ 50µA Id
Gate Charge (Qg Max)	22.5	nC	@ 10V Vgs
Power Dissipation (Max)	80	W	@ Tc
Operating Temperature Range	-55 to 150	°C	Junction temperature (TJ)
Package Type	TO-220-3	—	Through-hole
FET Type	N-Channel	—	Metal Oxide MOSFET

Substitute Part Grouping Explanation

Substitution of the STP4NK80Z is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel only
Technology: Metal Oxide MOSFET
Package: TO-220-3 through-hole configuration
Drain-to-Source Voltage (Vdss): Minimum 800V
Continuous Drain Current (Id): Minimum 3A @ 25°C
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required

Electrical Performance Parameters:

On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped into three categories based on electrical performance relative to the STP4NK80Z:

Category A - Direct Voltage/Current Match (800V, ≥3A): Parts maintaining identical voltage rating with equal or higher current ratings and compatible electrical characteristics.

Category B - Elevated Voltage Rating (>800V, ≥3A): Parts with higher voltage ratings that operate safely in 800V applications with enhanced voltage margin.

Category C - Enhanced Performance (800V, >3A): Parts with higher current ratings at the same voltage, providing increased thermal headroom and lower on-state resistance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (Ω)	Qg Max (nC)	Power Diss. (W)	Package	Series
STP4NK80Z	STMicroelectronics	800	3	3.5	22.5	80	TO-220-3	SuperMESH™
STP5NK80Z	STMicroelectronics	800	4.3	2.4	45.5	110	TO-220-3	PowerMESH™
STP3NK90Z	STMicroelectronics	900	3	4.8	22.7	90	TO-220-3	SuperMESH™
SPP04N80C3XKSA1	Infineon Technologies	800	4	1.3	31	63	TO-220-3	CoolMOS™
FQP6N80C	onsemi	800	5.5	2.5	30	158	TO-220-3	QFET®
IRFBE30PBF	Vishay Siliconix	800	4.1	3	78	125	TO-220-3	—
IXTP4N80P	IXYS	800	3.6	3.4	14.2	100	TO-220-3	Polar

Engineering Selection Recommendations

Category A - Direct Substitutes (800V, ≥3A):

IXTP4N80P (IXYS Polar series) operates at 800V with 3.6A continuous drain current, providing a 20% current margin over the STP4NK80Z. On-state resistance of 3.4Ω is comparable to the original part. This device maintains full RoHS3 compliance and unlimited moisture sensitivity rating. Gate charge of 14.2 nC is lower than the STP4NK80Z, resulting in reduced drive circuit power dissipation. Inventory availability is limited at 1,063 units.

SPP04N80C3XKSA1 (Infineon CoolMOS™) operates at 800V with 4A continuous drain current. This part exhibits significantly lower on-state resistance of 1.3Ω, resulting in reduced conduction losses and improved thermal performance. Power dissipation rating of 63W is lower than the STP4NK80Z due to the superior on-state characteristics. RoHS3 compliance is confirmed. Limited inventory of 1,381 units is available.

Category B - Elevated Voltage Rating:

STP3NK90Z (STMicroelectronics SuperMESH™) operates at 900V with 3A continuous drain current, providing 100V additional voltage margin. This part is electrically compatible with the STP4NK80Z application space while offering enhanced overvoltage protection. On-state resistance increases to 4.8Ω due to the higher voltage rating. Power dissipation rating of 90W provides thermal margin. Inventory availability is strong at 41,469 units. RoHS3 compliance is confirmed.

Category C - Enhanced Performance (Higher Current):

STP5NK80Z (STMicroelectronics PowerMESH™) operates at 800V with 4.3A continuous drain current, providing 43% additional current capacity. On-state resistance decreases to 2.4Ω, reducing conduction losses. Power dissipation rating of 110W provides significant thermal headroom. Gate charge increases to 45.5 nC, requiring higher drive circuit capability. Inventory availability is strong at 19,225 units. RoHS3 compliance is confirmed.

FQP6N80C (onsemi QFET®) operates at 800V with 5.5A continuous drain current, providing the highest current capacity among substitutes. On-state resistance of 2.5Ω is competitive. Power dissipation rating of 158W is the highest available. Gate charge of 30 nC is moderate. Inventory availability is strong at 16,162 units. RoHS3 compliance is confirmed.

IRFBE30PBF (Vishay Siliconix) operates at 800V with 4.1A continuous drain current. On-state resistance of 3Ω is comparable to the STP4NK80Z. Power dissipation rating of 125W provides thermal margin. Gate charge of 78 nC is significantly higher than the original part, requiring enhanced drive circuit capability. Maximum gate voltage is ±20V compared to ±30V for the STP4NK80Z. REACH status is affected. Inventory availability is strong at 29,400 units. RoHS3 compliance is confirmed.

Frequently Asked Questions (FAQ)

Q: Can the STP3NK90Z be used as a direct replacement for the STP4NK80Z?

A: The STP3NK90Z is electrically compatible for applications where the 800V voltage rating is not a hard limit. The 900V rating provides additional voltage margin. However, the on-state resistance increases from 3.5Ω to 4.8Ω, resulting in higher conduction losses. This substitution is valid when thermal design accommodates the increased power dissipation and the application voltage remains below 800V.

Q: What is the primary advantage of the SPP04N80C3XKSA1 over the STP4NK80Z?

A: The SPP04N80C3XKSA1 features significantly lower on-state resistance of 1.3Ω compared to 3.5Ω in the STP4NK80Z. This results in reduced conduction losses and improved efficiency. The trade-off is lower power dissipation rating (63W vs. 80W), which reflects the superior thermal performance of the CoolMOS™ technology rather than a limitation.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed are housed in TO-220-3 through-hole packages with identical pin configurations, enabling direct mechanical substitution without PCB layout modifications.

Q: Which substitute part has the lowest gate charge?

A: The IXTP4N80P (Polar series) has the lowest gate charge at 14.2 nC, compared to 22.5 nC for the STP4NK80Z. Lower gate charge reduces drive circuit power dissipation and enables faster switching transitions.

Q: Can the FQP6N80C be used in applications requiring exactly 3A continuous current?

A: Yes. The FQP6N80C is rated for 5.5A continuous drain current, which exceeds the 3A requirement of the STP4NK80Z. The device operates safely at lower current levels. The lower on-state resistance (2.5Ω vs. 3.5Ω) results in reduced power dissipation at the same current level.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge affects the energy required to switch the MOSFET on and off. Higher gate charge (such as the 78 nC in the IRFBE30PBF) requires the gate driver to supply more current or operate for longer periods. This increases drive circuit power dissipation and may require a more capable gate driver. Lower gate charge (such as the 14.2 nC in the IXTP4N80P) reduces these requirements.

Q: Is the IRFBE30PBF suitable for designs with ±30V gate voltage capability?

A: The IRFBE30PBF has a maximum gate voltage rating of ±20V, compared to ±30V for the STP4NK80Z. If the application circuit is designed to operate at gate voltages exceeding ±20V, the IRFBE30PBF is not suitable. Designs operating within ±20V gate voltage range are compatible.

Q: Which substitute offers the best thermal performance?

A: The FQP6N80C provides the highest power dissipation rating at 158W, combined with low on-state resistance of 2.5Ω. This combination results in the lowest junction temperature rise for a given current level. The STP5NK80Z (110W) and IRFBE30PBF (125W) also provide significant thermal margin over the STP4NK80Z (80W).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification. The IRFBE30PBF carries REACH Affected status, while all other parts are REACH Unaffected.

Q: What is the inventory status of substitute parts?

A: Inventory availability varies significantly. The STP3NK90Z has the highest availability at 41,469 units. The STP5NK80Z has 19,225 units. The FQP6N80C has 16,162 units. The IRFBE30PBF has 29,400 units. The SPP04N80C3XKSA1 and IXTP4N80P have limited availability at 1,381 and 1,063 units respectively.

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