STP4NB80 MOSFET N-Channel 800V 4A Equivalent & Substitute Parts

Part Overview

The STP4NB80 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 4A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is designed for high-voltage switching applications requiring 100W power dissipation capability. The STP4NB80 carries an obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Substiute Parts

STP4NB80

STMicroelectronicsIn Stock: 13694STP4NB80 Datasheet

Current PartRFQ

SPP04N80C3XKSA1

Infineon TechnologiesIn Stock: 1397SPP04N80C3XKSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP4NB80 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): 800V minimum
• Continuous Drain Current (Id) @ 25°C: 4A minimum
• Gate Drive Voltage: 10V
• Package / Case: TO-220-3 form factor
• Mounting Type: Through Hole

Functional Compatibility: The SPP04N80C3XKSA1 meets all mandatory electrical specifications for direct substitution. Both devices operate at identical voltage and current ratings with compatible gate drive requirements and identical package geometry. The substitute part maintains the same drain-to-source voltage class and continuous current rating, ensuring functional interchangeability in circuit applications designed for the STP4NB80.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: SPP04N80C3XKSA1

The SPP04N80C3XKSA1 manufactured by Infineon Technologies is the direct functional equivalent for the obsolete STP4NB80. Both devices share identical voltage and current ratings (800V Vdss, 4A Id), compatible gate drive voltage (10V), and identical TO-220-3 package geometry.

Compliance Advantage:

The SPP04N80C3XKSA1 carries ROHS3 compliance status, whereas the STP4NB80 is RoHS non-compliant. For applications subject to RoHS regulatory requirements, the Infineon substitute provides regulatory alignment while maintaining electrical equivalence.

Product Status:

The SPP04N80C3XKSA1 maintains active product status with established supply chain availability (1381 pcs in stock), contrasting with the obsolete status of the STP4NB80. This ensures long-term procurement viability and technical support continuity.

Performance Considerations:

The SPP04N80C3XKSA1 exhibits lower on-state resistance (1.3 Ohm @ 2.5A, 10V versus 3.3 Ohm @ 2A, 10V), resulting in reduced conduction losses and improved thermal efficiency. However, the substitute part specifies lower maximum power dissipation (63W versus 100W). Circuit designs operating near the 100W thermal limit of the original device require thermal analysis to confirm compatibility with the substitute part's 63W rating.

Frequently Asked Questions (FAQ)

Q: Can the SPP04N80C3XKSA1 directly replace the STP4NB80 in existing circuit designs?

A: Yes. Both devices are N-Channel MOSFETs with identical 800V drain-to-source voltage, 4A continuous drain current, 10V gate drive voltage, and TO-220-3 package geometry. Pin configuration and electrical interface are equivalent. Designs operating within the SPP04N80C3XKSA1 power dissipation limit (63W) require no circuit modification.

Q: What is the primary difference between these two parts?

A: The SPP04N80C3XKSA1 features lower on-state resistance (1.3 Ohm versus 3.3 Ohm), resulting in improved efficiency and reduced heat generation. The substitute part specifies 63W maximum power dissipation compared to 100W for the original device. Applications requiring thermal headroom near 100W must evaluate thermal performance with the substitute part.

Q: Are there packaging differences between the STP4NB80 and SPP04N80C3XKSA1?

A: Both devices use the TO-220-3 through-hole package. The STP4NB80 is supplied in standard packaging, while the SPP04N80C3XKSA1 is supplied in tube packaging. Pin layout and mechanical dimensions are identical, ensuring direct board-level compatibility.

Q: Does the SPP04N80C3XKSA1 meet regulatory compliance requirements?

A: The SPP04N80C3XKSA1 is ROHS3 compliant and REACH unaffected. The original STP4NB80 is RoHS non-compliant. For applications subject to RoHS directives, the Infineon substitute provides regulatory alignment.

Q: What is the operating temperature range for each device?

A: The STP4NB80 operates to a maximum junction temperature of 150°C. The SPP04N80C3XKSA1 specifies an operating range of -55°C to 150°C, providing extended low-temperature capability.

Q: Are gate charge and input capacitance specifications equivalent?

A: Gate charge specifications are similar (29 nC versus 31 nC @ 10V), indicating comparable gate drive requirements. Input capacitance differs due to measurement conditions (920 pF @ 25V versus 570 pF @ 100V). Both values fall within acceptable ranges for standard gate driver circuits.

Q: What is the maximum gate voltage for each device?

A: The STP4NB80 specifies ±30V maximum gate voltage. The SPP04N80C3XKSA1 specifies ±20V maximum gate voltage. Gate drive circuits must not exceed ±20V when using the substitute part.