STP4NB100 N-Channel MOSFET 1000V 3.8A Equivalent & Substitute Parts

Part Overview

The STP4NB100 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 1000V drain-to-source voltage with 3.8A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is rated for 125W power dissipation. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting the same packaging and mounting requirements.

Substiute Parts

STP4NB100

STMicroelectronicsIn Stock: 1301STP4NB100 Datasheet

Current PartRFQ

IRFBG30PBF

Vishay SiliconixIn Stock: 30554IRFBG30PBF Datasheet

SimilarRFQ

IXTP3N100P

IXYSIn Stock: 1819IXTP3N100P Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STP4NB100 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal 1000V
• Package / Case: Must be TO-220-3 through-hole configuration
• Mounting Type: Must be through-hole
• Power Dissipation: Must support minimum 125W at Tc
• FET Type: Must be N-Channel MOSFET technology

Acceptable Variation Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed 3.8A specification
• Rds On: Lower or equal values are acceptable
• Gate Charge (Qg): Lower values are acceptable
• Input Capacitance (Ciss): Variation acceptable within application constraints

The IRFBG30PBF and IXTP3N100P both meet the critical matching criteria with 1000V Vdss rating, TO-220-3 packaging, and 125W power dissipation capability. Both are active products with current manufacturing status, providing superior long-term availability compared to the obsolete STP4NB100.

Parameter Comparison

Engineering Selection Recommendations

IRFBG30PBF (Vishay Siliconix): This substitute provides equivalent voltage and power ratings with active product status. The IRFBG30PBF is ROHS3 compliant and REACH affected, meeting modern regulatory requirements. The continuous drain current of 3.1A is lower than the STP4NB100 specification; applications requiring the full 3.8A rating must account for this reduction. Gate charge is elevated at 80nC compared to 45nC, which may impact switching frequency performance in high-speed applications. Input capacitance is reduced to 980pF, providing potential benefits in switching applications.

IXTP3N100P (IXYS): This substitute meets all critical electrical parameters with 1000V Vdss and 125W power dissipation. The IXTP3N100P is ROHS3 compliant and REACH unaffected. Continuous drain current is rated at 3.0A, lower than the original 3.8A specification. Gate charge of 39nC is superior to both the original part and the IRFBG30PBF alternative, supporting faster switching transitions. Input capacitance of 1100pF falls between the other two options. Extended operating temperature range of -55°C to 150°C provides broader thermal operating envelope compared to the STP4NB100.

Both substitute parts are active products with established supply chains, providing superior long-term availability and regulatory compliance compared to the obsolete STP4NB100. Selection between IRFBG30PBF and IXTP3N100P depends on application-specific requirements for gate charge, input capacitance, and continuous current handling.

Frequently Asked Questions (FAQ)

Q: Can the IRFBG30PBF or IXTP3N100P directly replace the STP4NB100 in existing designs?

A: Both parts share identical voltage ratings (1000V Vdss), power dissipation (125W), and TO-220-3 packaging. However, the continuous drain current ratings are lower (3.1A and 3.0A respectively versus 3.8A). Direct replacement is possible only in applications where the actual operating current does not exceed the substitute part's rating. Circuit redesign or thermal management adjustments may be required for applications operating near the original 3.8A specification.

Q: What are the key differences in switching characteristics between these parts?

A: Gate charge differs significantly: STP4NB100 at 45nC, IRFBG30PBF at 80nC, and IXTP3N100P at 39nC. Lower gate charge enables faster switching transitions and reduced switching losses. Input capacitance also varies: STP4NB100 at 1400pF, IRFBG30PBF at 980pF, and IXTP3N100P at 1100pF. Applications with high switching frequencies benefit from lower gate charge and input capacitance values.

Q: Are there regulatory or compliance differences between these parts?

A: The STP4NB100 is RoHS non-compliant. Both IRFBG30PBF and IXTP3N100P are ROHS3 compliant. The IRFBG30PBF is REACH affected, while the IXTP3N100P is REACH unaffected. For applications subject to RoHS or REACH regulations, either substitute part meets current compliance requirements.

Q: How do the on-resistance characteristics compare?

A: Rds On values are measured at different current levels: STP4NB100 at 4.4Ω (2A, 10V), IRFBG30PBF at 5.0Ω (1.9A, 10V), and IXTP3N100P at 4.8Ω (1.5A, 10V). The IXTP3N100P provides the lowest on-resistance at its rated measurement point, reducing conduction losses. Applications sensitive to power dissipation should evaluate on-resistance performance at their specific operating current.

Q: What is the impact of lower continuous drain current ratings on thermal design?

A: The substitute parts are rated for 3.0A to 3.1A continuous current versus 3.8A for the original part. In applications operating at or near the original 3.8A specification, the substitute parts will reach thermal limits sooner. Thermal management calculations must be recalculated based on the actual operating current and the substitute part's power dissipation characteristics.

Q: Are the TO-220-3 packages mechanically identical?

A: All three parts use TO-220-3 through-hole packaging with identical mechanical footprints and pin configurations. PCB layout and heatsink mounting interfaces are directly compatible without modification.