STP4N90K5 Equivalent & Substitute Parts

Part Overview

The STP4N90K5 is an N-Channel 900V 3A MOSFET manufactured by STMicroelectronics in the MDmesh™ K5 series. This through-hole TO-220 package device is rated for 60W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently in active production status with 7527 units in stock inventory.

Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter specifications for N-Channel MOSFET applications. Substitutes must maintain compatibility with TO-220 through-hole mounting and meet or exceed the core electrical requirements of the original design.

Substiute Parts

STP4N90K5

STMicroelectronicsIn Stock: 7587STP4N90K5 Datasheet

Current PartRFQ

IXFP6N120P

IXYSIn Stock: 8682IXFP6N120P Datasheet

SimilarRFQ

IXTP6N100D2

IXYSIn Stock: 1256IXTP6N100D2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STP4N90K5 are qualified based on the following criteria:

Mandatory Compatibility Parameters:

• FET Type: N-Channel
• Mounting Type: Through Hole
• Package: TO-220-3
• Operating Temperature Range: -55°C to 150°C minimum
• RoHS3 Compliance

Electrical Performance Criteria:

• Drain to Source Voltage (Vdss): Equal to or greater than 900V
• Continuous Drain Current (Id): Equal to or greater than 3A
• Power Dissipation: Equal to or greater than 60W
• On-State Resistance (Rds On): Comparable performance at rated conditions

The identified substitute parts IXFP6N120P and IXTP6N100D2 meet these mandatory criteria. Both devices are N-Channel MOSFETs in TO-220-3 packages with voltage ratings exceeding 900V, current ratings of 6A, and power dissipation ratings significantly higher than the original part. Both operate across the required temperature range and maintain RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

STP4N90K5 (Original Part)

The STP4N90K5 remains the primary selection for applications requiring the exact electrical and thermal specifications of the MDmesh™ K5 series. This part is in active production with substantial inventory availability (7527 units). It is ROHS3 compliant and REACH unaffected, meeting all regulatory requirements for industrial and commercial applications.

IXFP6N120P (IXYS HiPerFET™ Polar Series)

The IXFP6N120P is suitable as a substitute when higher voltage margin and increased current capacity are acceptable. This device provides 1200V Vdss rating and 6A continuous drain current, doubling the current capability of the original part. Power dissipation capability is increased to 250W. The part is ROHS3 compliant and in active production status with 8637 units in inventory. The higher gate charge (92 nC vs. 5.3 nC) and input capacitance (2830 pF vs. 173 pF) must be evaluated for switching speed requirements in the target application.

IXTP6N100D2 (IXYS Depletion Mode)

The IXTP6N100D2 is a depletion-mode N-Channel MOSFET with 1000V Vdss and 6A continuous drain current. This part offers 300W power dissipation capability. The depletion-mode topology differs from the enhancement-mode operation of the STP4N90K5, requiring different gate drive circuit design. This part is ROHS3 compliant and in active production with 1156 units in inventory. The maximum gate voltage specification is ±20V, compared to ±30V for the original part. Depletion-mode operation requires careful circuit evaluation before substitution.

All three parts maintain identical operating temperature ranges (-55°C to 150°C) and moisture sensitivity levels (MSL 1, Unlimited).

Frequently Asked Questions (FAQ)

Q: Can the IXFP6N120P directly replace the STP4N90K5 in my circuit?

A: The IXFP6N120P is mechanically and electrically compatible in TO-220-3 through-hole applications. However, the significantly higher gate charge (92 nC vs. 5.3 nC) and input capacitance (2830 pF vs. 173 pF) will affect switching speed and gate drive current requirements. Circuit simulation or testing is necessary to confirm performance in your specific application.

Q: What is the key difference between the IXFP6N120P and IXTP6N100D2?

A: The IXFP6N120P is an enhancement-mode MOSFET, while the IXTP6N100D2 is a depletion-mode device. Enhancement-mode devices (like the original STP4N90K5 and IXFP6N120P) require positive gate voltage to conduct. Depletion-mode devices conduct with zero gate voltage and require negative gate voltage to turn off. These topologies require different gate drive circuits and cannot be interchanged without circuit redesign.

Q: Are all three parts RoHS3 compliant?

A: Yes. The STP4N90K5, IXFP6N120P, and IXTP6N100D2 are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity levels.

Q: What are the voltage rating differences between these parts?

A: The STP4N90K5 is rated for 900V Vdss. The IXFP6N120P provides 1200V Vdss, and the IXTP6N100D2 provides 1000V Vdss. Higher voltage ratings provide design margin but do not reduce performance in lower-voltage applications.

Q: Which substitute part has the lowest on-state resistance?

A: The IXTP6N100D2 specifies 2.2 Ohm Rds On at 3A and 0V gate voltage. The STP4N90K5 specifies 2.1 Ohm at 1A and 10V gate voltage. The IXFP6N120P specifies 2.4 Ohm at 500mA and 10V gate voltage. Direct comparison requires evaluation at identical test conditions, which are not provided across all parts.

Q: Can I use a substitute part with higher current rating in a 3A application?

A: Yes. Both substitute parts are rated for 6A continuous drain current, which exceeds the 3A requirement of the original design. This provides additional design margin and thermal headroom in the application.

Q: What is the maximum gate voltage for each part?

A: The STP4N90K5 and IXFP6N120P both support ±30V maximum gate voltage. The IXTP6N100D2 supports ±20V maximum gate voltage. Gate drive circuits must operate within these limits.

Q: Are there inventory differences between these parts?

A: Yes. The STP4N90K5 has 7527 units in stock, the IXFP6N120P has 8637 units, and the IXTP6N100D2 has 1156 units available.