STP45N60DM6 Equivalent & Substitute Parts

Part Overview

The STP45N60DM6 is an N-Channel 600V 30A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM6 series. This through-hole TO-220 device is rated for 210W power dissipation and operates across a temperature range of -55°C to 150°C. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	30	A
Rds On (Max) @ 15A, 10V	99	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.75	V
Gate Charge (Qg) @ 10V	44	nC
Power Dissipation (Max)	210	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package	TO-220-3	-

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs is determined by the following criteria:

Primary Electrical Parameters:

Drain to Source Voltage (Vdss) must equal or exceed 600V
Continuous Drain Current (Id) must meet or exceed 30A at 25°C
On-state resistance (Rds On) must not exceed specified application limits
Gate threshold voltage (Vgs(th)) must fall within compatible operating ranges
Gate charge (Qg) characteristics must support existing drive circuitry

Mechanical Parameters:

Mounting type: Through Hole
Package format: TO-220-3 or equivalent footprint compatibility
Operating temperature range: -55°C to 150°C minimum

Compliance Requirements:

RoHS3 compliance status
REACH compliance status
Product status (Active preferred; Not For New Designs acceptable for legacy applications)

The four substitute parts listed meet these criteria with variations in current rating, on-state resistance, and power dissipation characteristics.

Parameter Comparison

Parameter	STP45N60DM6	FCP130N60	IPP60R099P7XKSA1	IPP60R125CPXKSA1	R6035VNX3C16
Manufacturer	STMicroelectronics	Fairchild Semiconductor	Infineon Technologies	Infineon Technologies	Rohm Semiconductor
Vdss (V)	600	600	600	650	600
Id @ 25°C (A)	30	28	31	25	35
Rds On (Max) (mOhm)	99 @ 15A, 10V	130 @ 14A, 10V	99 @ 10.5A, 10V	125 @ 16A, 10V	114 @ 8A, 15V
Vgs(th) (Max) (V)	4.75 @ 250µA	3.5 @ 250µA	4 @ 530µA	3.5 @ 1.1mA	6.5 @ 1.1mA
Gate Charge (Qg) @ 10V (nC)	44	70	45	70	50
Power Dissipation (Max) (W)	210	278	117	208	347
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Active	Active	Not For New Designs	Active
RoHS3 Compliance	Yes	Not specified	Yes	Yes	Yes

Engineering Selection Recommendations

Primary Selection (STP45N60DM6): The STP45N60DM6 remains the preferred choice for new designs. It maintains Active product status, carries full RoHS3 and REACH compliance, and delivers balanced performance across current rating, on-state resistance, and gate charge characteristics.

Equivalent Substitutes (Active Status):

IPP60R099P7XKSA1 (Infineon CoolMOS™ P7): This substitute provides equivalent Vdss (600V) and Rds On (99 mOhm), with marginally higher continuous current (31A). Gate charge is nearly identical (45 nC vs. 44 nC). Active product status and full compliance certifications support use in new designs. Lower power dissipation rating (117W) requires thermal evaluation in high-power applications.

FCP130N60 (Fairchild SuperFET® II): This substitute meets Vdss requirement (600V) with slightly lower continuous current (28A). Rds On is higher at 130 mOhm, and gate charge is elevated (70 nC). Active product status supports new designs. Higher power dissipation (278W) provides thermal margin. Compliance status not specified in provided data.

R6035VNX3C16 (Rohm PRESTOMOS WIT): This substitute exceeds current rating (35A) and Vdss (600V) with higher power dissipation (347W). Rds On is 114 mOhm at 15V drive. Gate threshold voltage is elevated (6.5V), requiring verification of gate drive compatibility. Active product status and full compliance support new designs.

Legacy Substitute (Not For New Designs):

IPP60R125CPXKSA1 (Infineon CoolMOS™): This part carries "Not For New Designs" status and is listed for reference only. Vdss is elevated to 650V; continuous current is reduced to 25A. Rds On is 125 mOhm. Use only in legacy system maintenance or when supply constraints require it.

Frequently Asked Questions (FAQ)

Q: Can the IPP60R099P7XKSA1 directly replace the STP45N60DM6?

A: Yes, within electrical and thermal constraints. Both devices share 600V Vdss, 99 mOhm Rds On, and nearly identical gate charge (45 nC vs. 44 nC). The IPP60R099P7XKSA1 provides 31A continuous current versus 30A. However, its lower power dissipation rating (117W vs. 210W) requires thermal analysis in applications approaching maximum power levels.

Q: What is the impact of higher gate charge in the FCP130N60?

A: The FCP130N60 exhibits 70 nC gate charge compared to 44 nC in the STP45N60DM6. This requires proportionally higher gate drive current and energy. Existing gate drive circuits designed for 44 nC may require adjustment to maintain switching speed and efficiency. Verify gate driver capability before substitution.

Q: Why is the R6035VNX3C16 rated for 35A when the STP45N60DM6 is 30A?

A: The R6035VNX3C16 is rated for higher continuous current (35A) and power dissipation (347W), providing additional thermal and current margin. This does not preclude its use as a substitute; it indicates enhanced capability. Verify that the higher current rating does not introduce unintended circuit behavior changes.

Q: Can I use the IPP60R125CPXKSA1 in new designs?

A: The IPP60R125CPXKSA1 carries "Not For New Designs" status. It is suitable only for legacy system maintenance, repair, or when supply constraints require it. For new designs, select from the Active-status alternatives: IPP60R099P7XKSA1, FCP130N60, or R6035VNX3C16.

Q: Are all substitutes RoHS3 compliant?

A: The STP45N60DM6, IPP60R099P7XKSA1, IPP60R125CPXKSA1, and R6035VNX3C16 are confirmed RoHS3 compliant. The FCP130N60 compliance status is not specified in provided data. Verify compliance documentation with the supplier before final selection.

Q: Do all substitutes use the same TO-220-3 footprint?

A: Yes. All listed substitutes use TO-220-3 or equivalent TO-220AB packaging, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions. Verify pin assignment and lead spacing with device datasheets before assembly.

Q: What is the significance of gate threshold voltage differences?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage at which the device begins to conduct. The STP45N60DM6 specifies 4.75V; substitutes range from 3.5V to 6.5V. Lower thresholds (3.5V) enable operation with lower gate drive voltages; higher thresholds (6.5V in R6035VNX3C16) require stronger gate drive. Verify compatibility with existing gate driver output voltage specifications.

Q: How do I evaluate thermal performance differences?

A: Power dissipation ratings vary significantly: STP45N60DM6 (210W), IPP60R099P7XKSA1 (117W), FCP130N60 (278W), IPP60R125CPXKSA1 (208W), and R6035VNX3C16 (347W). Lower ratings indicate tighter thermal constraints; higher ratings provide margin. Thermal performance depends on junction temperature, case temperature, and thermal resistance. Consult device datasheets for thermal resistance (Rθ) specifications and perform thermal modeling for your specific application.

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