STP40NF20 N-Channel MOSFET 200V 40A TO-220 Equivalent & Substitute Parts

Part Overview

The STP40NF20 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ series. This device operates at 200V drain-to-source voltage with a continuous drain current rating of 40A at 25°C and maximum power dissipation of 160W. The component is housed in a TO-220-3 through-hole package and maintains Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. The STP40NF20 serves applications requiring moderate current handling at 200V operation, and alternative devices may be selected based on availability, thermal performance requirements, or specific application constraints.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	40	A
On-State Resistance (Rds On) @ 20A, 10V	45	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Maximum Gate Voltage (Vgs)	±20	V
Gate Charge (Qg) @ 10V	75	nC
Input Capacitance (Ciss) @ 25V	2500	pF
Power Dissipation (Max)	160	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the STP40NF20 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 200V
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting: Through Hole

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 40A
On-State Resistance (Rds On): Equal to or lower than 45mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): Within ±1V of 4V specification
Maximum Gate Voltage (Vgs): ±20V or greater
Operating Temperature Range: Minimum -55°C to 150°C or extended

Substitute parts identified in this reference maintain 200V Vdss rating and TO-220-3 packaging. Devices with higher current ratings, lower on-state resistance, or extended temperature ranges provide enhanced performance margins. Parts with lower current ratings or higher on-state resistance do not qualify as direct substitutes for the STP40NF20 in applications requiring the full 40A specification.

Parameter Comparison

Parameter	STP40NF20	FDP61N20	IRFB260NPBF	IRFB4227PBF	IXTP60N20T	IXFP36N20X3
Manufacturer	STMicroelectronics	onsemi	Infineon	Infineon	IXYS	IXYS
Vdss (V)	200	200	200	200	200	200
Id @ 25°C (A)	40	61	56	65	60	36
Rds On (mOhm)	45 @ 20A	41 @ 30.5A	40 @ 34A	24 @ 46A	40 @ 30A	45 @ 18A
Vgs(th) @ 250µA (V)	4	5	4	5	5	4.5
Vgs (Max) (V)	±20	±30	±20	±30	±20	±20
Qg @ 10V (nC)	75	75	220	98	73	21
Ciss @ 25V (pF)	2500	3380	4220	4600	4530	1425
Power Dissipation (W)	160	417	380	330	500	176
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 175	-40 to 175	-55 to 175	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Primary Substitutes (Full Performance Equivalence):

The FDP61N20 (onsemi), IRFB260NPBF (Infineon), IRFB4227PBF (Infineon), and IXTP60N20T (IXYS) all exceed the STP40NF20 specifications in continuous drain current while maintaining the 200V Vdss rating and TO-220-3 package. These devices provide current ratings between 56A and 65A, enabling direct substitution with performance margin. All four devices maintain RoHS3 compliance and Active product status.

Secondary Substitutes (Reduced Current Margin):

The IXFP36N20X3 provides 36A continuous drain current, which falls below the STP40NF20 specification of 40A. This device is suitable only for applications where the actual operating current does not exceed 36A, despite the STP40NF20 rating. The IXFP36N20X3 offers the lowest input capacitance (1425 pF) among all listed substitutes, which may provide advantages in high-frequency switching applications.

Not Recommended:

The IRFB4620PBF and IRFB5620PBF are rated at 25A continuous drain current, which is insufficient for applications requiring the full 40A capability of the STP40NF20. These devices do not qualify as functional substitutes.

Compliance and Availability:

All recommended substitute parts maintain RoHS3 compliance, REACH Unaffected status, and Active product status. Inventory availability varies by part number, with IRFB4227PBF showing the highest stock level (34,054 units) and IXFP36N20X3M showing the lowest (1,141 units).

Frequently Asked Questions (FAQ)

Q: Can the IXFP36N20X3 replace the STP40NF20 in all applications?

A: The IXFP36N20X3 is rated for 36A continuous drain current, which is below the STP40NF20 specification of 40A. Substitution is valid only when the actual application current does not exceed 36A. For applications requiring the full 40A capability, use FDP61N20, IRFB260NPBF, IRFB4227PBF, or IXTP60N20T.

Q: What is the significance of the on-state resistance (Rds On) difference between substitutes?

A: Lower Rds On values result in reduced power dissipation and heat generation during operation. The IRFB4227PBF exhibits the lowest Rds On at 24 mOhm, while the IXFP36N20X3 matches the STP40NF20 at 45 mOhm. Selection depends on thermal management requirements and power budget constraints.

Q: Are all substitute parts compatible with the same PCB layout?

A: All recommended substitutes use the TO-220-3 through-hole package with identical pin configuration and mechanical dimensions. Direct PCB substitution is possible without layout modification. The IXFP36N20X3M variant features an isolated tab, which may require different thermal mounting considerations.

Q: What is the impact of gate charge (Qg) differences on circuit design?

A: Gate charge affects the energy required to switch the MOSFET and influences gate driver design. The IXFP36N20X3 has the lowest gate charge at 21 nC, while the IRFB260NPBF has the highest at 220 nC. Lower gate charge enables faster switching and reduced driver power consumption. Circuit redesign is not required for substitution, but driver performance characteristics will vary.

Q: Can I use a substitute with a higher operating temperature range?

A: Yes. The STP40NF20 operates from -55°C to 150°C. Substitutes with extended ranges (such as IRFB260NPBF, IRFB4227PBF, and IXTP60N20T rated to 175°C) provide additional thermal margin and are fully compatible. Extended temperature range does not create compatibility issues.

Q: What does the input capacitance (Ciss) parameter affect?

A: Input capacitance influences gate drive circuit impedance and switching speed. Higher Ciss values (such as 4600 pF in IRFB4227PBF) require more gate charge and may slow switching transitions. Lower Ciss values (such as 1425 pF in IXFP36N20X3) enable faster switching. Selection depends on the specific gate driver circuit and switching frequency requirements.

Q: Are all substitute parts available in the same packaging options?

A: All recommended substitutes are supplied in TO-220-3 through-hole packages in tube packaging. The IXFP36N20X3M variant includes an isolated tab option for thermal isolation applications. Standard versions are directly interchangeable without packaging considerations.

Q: What is the difference between Vgs(th) specifications across substitutes?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage at which the MOSFET begins to conduct. The STP40NF20 specifies 4V at 250µA, while some substitutes specify 5V. This difference is within normal manufacturing tolerance and does not affect circuit compatibility. Gate driver circuits designed for the STP40NF20 operate correctly with substitutes having slightly higher threshold voltages.

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