STP3NK60ZFP Equivalent & Substitute Parts

Part Overview

The STP3NK60ZFP is an N-Channel 600V 2.4A MOSFET manufactured by STMicroelectronics in the SuperMESH™ series, housed in a TO-220FP package for through-hole mounting applications. This device is rated for 20W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as Not For New Designs, indicating that alternative solutions should be evaluated for new circuit implementations. Identifying equivalent and substitute parts is necessary to ensure design continuity, improve availability, or optimize performance characteristics for specific application requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	2.4	A
On-State Resistance (Rds On) @ 1.2A, 10V	3.6	Ohm
Gate Threshold Voltage (Vgs(th)) @ 50µA	4.5	V
Gate Charge (Qg) @ 10V	11.8	nC
Power Dissipation (Max)	20	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220FP	-
Mounting Type	Through Hole	-

Substitute Part Grouping Explanation

Substitution of the STP3NK60ZFP is determined by the following critical parameters:

Voltage Rating (Vdss): The drain-to-source voltage must be equal to or greater than 600V to maintain electrical safety margins in the application circuit.

Current Rating (Id): The continuous drain current must be equal to or greater than 2.4A to support the required load without thermal stress.

Package and Mounting: Substitutes must use through-hole mounting in compatible packages (TO-220FP, TO-220-3, or TO-220SIS) to ensure mechanical fit and thermal management compatibility.

Temperature Range: Operating temperature capability must span at least -55°C to 150°C to match the original specification.

Compliance and Status: Substitute parts must maintain RoHS3 compliance and preferably carry Active product status for long-term availability.

The substitute parts listed below meet these criteria with varying performance characteristics in gate charge, on-state resistance, and power dissipation ratings.

Parameter Comparison

Parameter	STP3NK60ZFP	STF4LN80K5	IRFIBC20GPBF	IRFIBC30GPBF	TK3A60DA(Q,M)
Manufacturer	STMicroelectronics	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	Toshiba Semiconductor
Vdss (V)	600	800	600	600	600
Id @ 25°C (A)	2.4	3.0	1.7	2.5	2.5
Rds On @ 10V (Ohm)	3.6 @ 1.2A	2.6 @ 1A	4.4 @ 1A	2.2 @ 1.5A	2.8 @ 1.3A
Vgs(th) (V)	4.5 @ 50µA	5.0 @ 100µA	4.0 @ 250µA	4.0 @ 250µA	4.4 @ 1mA
Gate Charge Qg @ 10V (nC)	11.8	3.7	18	31	9
Power Dissipation (W)	20	20	30	35	30
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220FP	TO-220FP	TO-220-3	TO-220-3	TO-220SIS
Product Status	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant

Engineering Selection Recommendations

STF4LN80K5 (STMicroelectronics): This substitute offers the highest voltage rating at 800V with improved current capacity of 3A and superior on-state resistance of 2.6Ohm. The significantly lower gate charge of 3.7nC provides faster switching characteristics. This part maintains Active product status and ROHS3 compliance, making it suitable for new designs requiring enhanced performance margins and extended voltage headroom.

IRFIBC30GPBF (Vishay Siliconix): This substitute matches the 600V voltage rating and exceeds the current requirement at 2.5A. It features the lowest on-state resistance of 2.2Ohm among all substitutes, resulting in reduced power dissipation. The higher power rating of 35W provides additional thermal margin. Active product status and ROHS3 compliance support long-term design viability.

IRFIBC20GPBF (Vishay Siliconix): This substitute maintains the 600V voltage rating but provides only 1.7A continuous current, which is below the original 2.4A specification. This part is suitable only for applications where the actual load current does not exceed 1.7A. Active product status and ROHS3 compliance are maintained.

TK3A60DA(Q,M) (Toshiba Semiconductor): This substitute matches the 600V voltage rating and provides 2.5A current capacity. The on-state resistance of 2.8Ohm and gate charge of 9nC offer balanced performance characteristics. Active product status and RoHS compliance support continued availability, though the TO-220SIS package variant may require mechanical verification for PCB compatibility.

Frequently Asked Questions (FAQ)

Q: Can the STF4LN80K5 be used as a direct replacement for the STP3NK60ZFP?

A: The STF4LN80K5 is electrically compatible as a substitute. It maintains the same 10V drive voltage, operating temperature range, and through-hole mounting configuration. The higher 800V voltage rating and improved performance characteristics make it suitable for applications requiring enhanced reliability margins. Package compatibility requires verification, as the STF4LN80K5 uses TO-220FP packaging identical to the original part.

Q: What is the primary advantage of the IRFIBC30GPBF over the original STP3NK60ZFP?

A: The IRFIBC30GPBF provides superior on-state resistance of 2.2Ohm compared to 3.6Ohm in the original part, resulting in lower conduction losses and reduced heat generation. The higher power dissipation rating of 35W versus 20W provides additional thermal headroom. These characteristics make it advantageous for applications with continuous high-current operation or thermal constraints.

Q: Is the IRFIBC20GPBF suitable for all applications using the STP3NK60ZFP?

A: The IRFIBC20GPBF is suitable only for applications where the actual continuous drain current does not exceed 1.7A. Since the original part is rated for 2.4A, this substitute cannot be used in applications requiring the full current capacity. Verification of actual circuit current requirements is necessary before selection.

Q: What are the package differences between substitute parts?

A: The STF4LN80K5 uses TO-220FP packaging, identical to the original STP3NK60ZFP. The IRFIBC20GPBF and IRFIBC30GPBF use TO-220-3 packaging with isolated tabs. The TK3A60DA(Q,M) uses TO-220SIS packaging. All three package types are through-hole mounted and mechanically compatible with standard TO-220 footprints, though isolated tab configurations may require PCB layout verification.

Q: Why is the STP3NK60ZFP marked as Not For New Designs?

A: The Not For New Designs status indicates that STMicroelectronics has discontinued active development and marketing of this part. While existing inventory remains available, new circuit designs should utilize Active-status alternatives such as the STF4LN80K5, IRFIBC30GPBF, or TK3A60DA(Q,M) to ensure long-term supply chain stability and access to manufacturer technical support.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed maintain RoHS compliance. The STF4LN80K5, IRFIBC20GPBF, and IRFIBC30GPBF carry ROHS3 certification. The TK3A60DA(Q,M) carries RoHS compliance certification. All parts are suitable for applications requiring environmental compliance standards.

Q: How does gate charge affect switching performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values result in faster switching transitions and reduced switching losses. The TK3A60DA(Q,M) offers the lowest gate charge at 9nC, followed by STF4LN80K5 at 3.7nC. The original STP3NK60ZFP has 11.8nC. Applications with high switching frequencies benefit from lower gate charge characteristics.

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