STP3NK60Z Equivalent & Substitute Parts

Part Overview

The STP3NK60Z is an N-Channel 600V 2.4A MOSFET manufactured by STMicroelectronics in the SuperMESH™ series, housed in a TO-220-3 package for through-hole mounting. This device is rated for 45W power dissipation and operates across a temperature range of -55°C to 150°C. The part carries a "Not For New Designs" status, indicating that STMicroelectronics has discontinued active development for this model. Equivalent and substitute parts are necessary to support existing applications, provide design flexibility, and ensure supply chain continuity for systems currently utilizing this MOSFET.

Substiute Parts

STP3NK60Z
STMicroelectronicsIn Stock: 34346STP3NK60Z Datasheet
STP3NK60Z
Current Part
FQP3N60C
Fairchild SemiconductorIn Stock: 15263FQP3N60C Datasheet
FQP3N60C
Direct
IRFBC20PBF
Vishay SiliconixIn Stock: 3344IRFBC20PBF Datasheet
IRFBC20PBF
Similar
IRFBC30APBF
Vishay SiliconixIn Stock: 2118IRFBC30APBF Datasheet
IRFBC30APBF
Similar
IRFBC30PBF
Vishay SiliconixIn Stock: 35411IRFBC30PBF Datasheet
IRFBC30PBF
Similar
IXTP4N80P
IXYSIn Stock: 1149IXTP4N80P Datasheet
IXTP4N80P
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 2.4 A
On-State Resistance (Rds On) @ 1.2A, 10V 3.6 Ohm
Gate Threshold Voltage (Vgs(th)) @ 50µA 4.5 V
Gate Charge (Qg) @ 10V 11.8 nC
Power Dissipation (Max) 45 W
Operating Temperature Range -55 to 150 °C
Package Type TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the STP3NK60Z is determined by the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): All substitute parts must maintain a minimum drain-to-source voltage rating of 600V to ensure safe operation in the original application circuit. Parts with higher voltage ratings (such as 800V) are acceptable as they provide additional voltage margin.

Current Rating (Id): The continuous drain current must meet or exceed 2.4A at 25°C. Substitute parts with higher current ratings provide design margin and thermal headroom.

On-State Resistance (Rds On): This parameter directly affects power dissipation and switching losses. Substitute parts with equal or lower Rds On values maintain or improve circuit efficiency.

Package and Mounting: All substitute parts must use the TO-220-3 package with through-hole mounting to ensure mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating range to maintain reliability across all environmental conditions.

Gate Drive Voltage: All parts operate with a 10V gate drive voltage, ensuring compatibility with existing gate driver circuits.

Parameter Comparison

Parameter STP3NK60Z (Main) FQP3N60C IRFBC20PBF IRFBC30APBF IRFBC30PBF IXTP4N80P
Manufacturer STMicroelectronics Fairchild Semiconductor Vishay Siliconix Vishay Siliconix Vishay Siliconix IXYS
Vdss (V) 600 600 600 600 600 800
Id @ 25°C (A) 2.4 3.0 2.2 3.6 3.6 3.6
Rds On @ 10V (Ohm) 3.6 @ 1.2A 3.4 @ 1.5A 4.4 @ 1.3A 2.2 @ 2.2A 2.2 @ 2.2A 3.4 @ 0.5A
Vgs(th) (V) 4.5 @ 50µA 4.0 @ 250µA 4.0 @ 250µA 4.5 @ 250µA 4.0 @ 250µA 5.5 @ 100µA
Qg @ 10V (nC) 11.8 14 18 23 31 14.2
Power Dissipation (W) 45 75 50 74 74 100
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Not For New Designs Active Active Active Active Active
RoHS Compliance ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Recommended for Drop-In Replacement):

FQP3N60C (Fairchild Semiconductor) is the primary direct equivalent. This part maintains the 600V voltage rating, exceeds the 2.4A current requirement with 3.0A continuous drain current, and provides improved power dissipation capability at 75W. The FQP3N60C carries Active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance is not explicitly stated in the provided data; however, the part is actively manufactured and widely available in inventory (15,226 pcs).

Higher Current Capability Substitutes:

IRFBC30APBF and IRFBC30PBF (Vishay Siliconix) both provide 3.6A continuous drain current with 600V voltage rating and improved on-state resistance (2.2 Ohm @ 2.2A). Both parts are ROHS3 compliant and carry Active product status. IRFBC30PBF offers superior inventory availability (35,400 pcs) and REACH Unaffected status. These parts are suitable for applications requiring higher current margins or lower conduction losses.

Lower Current Alternative:

IRFBC20PBF (Vishay Siliconix) provides 2.2A continuous drain current, which approaches the STP3NK60Z specification. This part is suitable only for applications where the 2.4A rating is not fully utilized. IRFBC20PBF carries Active product status and ROHS3 compliance but has lower inventory availability (3,313 pcs) and REACH Affected status.

Higher Voltage Rating Alternative:

IXTP4N80P (IXYS) provides 800V drain-to-source voltage with 3.6A continuous current and 100W power dissipation. This part is suitable for applications requiring additional voltage margin or operating in higher voltage environments. The IXTP4N80P carries Active product status, ROHS3 compliance, and REACH Unaffected status. Inventory availability is limited (1,063 pcs). The higher gate threshold voltage (5.5V) may require gate driver circuit verification.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a higher voltage rating than the STP3NK60Z?

A: Yes. A higher voltage rating (such as 800V in the IXTP4N80P) provides additional voltage margin and is electrically compatible. The circuit will operate safely at the original 600V design voltage. However, higher voltage-rated MOSFETs typically exhibit higher on-state resistance and input capacitance, which may affect switching losses and gate drive requirements.

Q: What is the minimum current rating required for a substitute part?

A: The substitute part must have a continuous drain current rating of at least 2.4A at 25°C to match the STP3NK60Z specification. Parts with higher current ratings (3.0A, 3.6A) provide thermal headroom and design margin but are fully compatible.

Q: Are all substitute parts compatible with my existing PCB layout?

A: Yes, all listed substitute parts use the TO-220-3 package with through-hole mounting, ensuring mechanical and thermal compatibility with existing PCB designs. Pin configurations are identical across all parts.

Q: Does on-state resistance affect my circuit performance?

A: Yes. Lower on-state resistance (Rds On) reduces conduction losses and heat generation. Substitute parts with lower Rds On values (such as IRFBC30APBF and IRFBC30PBF at 2.2 Ohm) will improve circuit efficiency compared to the STP3NK60Z (3.6 Ohm). Higher Rds On values (such as IRFBC20PBF at 4.4 Ohm) will increase power dissipation.

Q: What is the significance of gate charge (Qg)?

A: Gate charge affects switching speed and gate driver power consumption. Higher gate charge values require more energy to switch the MOSFET on and off. The STP3NK60Z has a relatively low gate charge (11.8 nC), while some substitutes have higher values (up to 31 nC in IRFBC30PBF). Verify that your gate driver circuit can supply the required gate current for the selected substitute part.

Q: Why is the STP3NK60Z marked "Not For New Designs"?

A: This status indicates that STMicroelectronics has discontinued active development and recommends using alternative parts for new circuit designs. Existing applications using the STP3NK60Z can continue operation, but substitute parts should be evaluated for long-term production support.

Q: What is the difference between IRFBC30APBF and IRFBC30PBF?

A: Both parts have identical electrical specifications (600V, 3.6A, 2.2 Ohm Rds On) and package type. The primary differences are gate charge (23 nC vs. 31 nC) and maximum gate voltage (±30V vs. ±20V). IRFBC30PBF has significantly higher inventory availability (35,400 pcs vs. 2,093 pcs) and REACH Unaffected status, making it the preferred choice for production applications.

Q: Can I use IXTP4N80P as a direct replacement?

A: IXTP4N80P is electrically compatible but not a direct replacement. The 800V voltage rating and higher gate threshold voltage (5.5V) may require circuit verification. Use this part only when the higher voltage rating provides a specific design advantage or when other substitutes are unavailable.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed carry explicit ROHS3 Compliant status, ensuring compliance with hazardous substance restrictions. The STP3NK60Z is also ROHS3 compliant.

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