STP3NK100Z Equivalent & Substitute Parts

Part Overview

The STP3NK100Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 1000V drain-to-source voltage with a continuous drain current of 2.5A at 25°C. This device is part of the SuperMESH™ series and is housed in a TO-220-3 through-hole package. The STP3NK100Z is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the through-hole TO-220 form factor.

Key Parameters

Parameter	STP3NK100Z	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	2.5	A (Tc)
Rds On (Max) @ Id, Vgs	6	Ohm @ 1.25A, 10V
Gate Threshold Voltage (Vgs(th)) (Max) @ Id	4.5	V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	18	nC @ 10V
Power Dissipation (Max)	90	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the STP3NK100Z is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 1000V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package: Must be TO-220-3 through-hole configuration
Operating Temperature Range: Must support -55°C to 150°C

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 2.5A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support thermal requirements of the application

The substitute parts IRFBG20PBF and IRFBG30PBF are classified as equivalent alternatives based on matching the primary substitution criteria. Both devices are manufactured by Vishay Siliconix, maintain the 1000V voltage rating, utilize N-Channel MOSFET technology, and are packaged in TO-220AB form factors compatible with TO-220-3 through-hole mounting.

Parameter Comparison

Parameter	STP3NK100Z (STMicroelectronics)	IRFBG20PBF (Vishay Siliconix)	IRFBG30PBF (Vishay Siliconix)	Unit
Drain to Source Voltage (Vdss)	1000	1000	1000	V
Continuous Drain Current (Id) @ 25°C	2.5	1.4	3.1	A (Tc)
Rds On (Max) @ Id, Vgs	6 @ 1.25A, 10V	11 @ 840mA, 10V	5 @ 1.9A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) (Max) @ Id	4.5 @ 50µA	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	18 @ 10V	38 @ 10V	80 @ 10V	nC
Vgs (Max)	±30	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	601 @ 25V	500 @ 25V	980 @ 25V	pF
Power Dissipation (Max)	90	54	125	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-220-3	TO-220AB	TO-220AB	-
Product Status	Obsolete	Active	Active	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

IRFBG30PBF Selection: The IRFBG30PBF is the preferred substitute for the STP3NK100Z in applications requiring direct performance equivalence or enhancement. This device exceeds the original specification with a continuous drain current of 3.1A (compared to 2.5A) and superior power dissipation capability of 125W (compared to 90W). The IRFBG30PBF maintains the 1000V voltage rating and operates across the identical temperature range of -55°C to 150°C. Both devices are ROHS3 compliant and carry active product status, ensuring long-term availability. The lower on-state resistance of 5 Ohm at 1.9A, 10V provides improved efficiency characteristics. The IRFBG30PBF is suitable for applications where the STP3NK100Z was previously specified and where enhanced current handling or thermal performance is beneficial.

IRFBG20PBF Selection: The IRFBG20PBF is a substitute option for applications with reduced current requirements or where cost optimization is a design consideration. This device is rated for 1.4A continuous drain current, which is below the original STP3NK100Z specification of 2.5A. The IRFBG20PBF maintains the 1000V voltage rating and full operating temperature range. Power dissipation is rated at 54W, which is lower than the original device. This substitute is appropriate only for circuits where the actual operating current does not exceed 1.4A at 25°C. The IRFBG20PBF is ROHS3 compliant with active product status.

Compliance Considerations: All three devices maintain ROHS3 compliance and operate within the -55°C to 150°C temperature range. The IRFBG30PBF carries REACH Affected status, while the STP3NK100Z and IRFBG20PBF are REACH Unaffected. All devices are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the IRFBG20PBF directly replace the STP3NK100Z in all applications?

A: No. The IRFBG20PBF is rated for 1.4A continuous drain current, which is below the STP3NK100Z specification of 2.5A. This substitute is suitable only for circuits where the actual operating current does not exceed 1.4A at 25°C. Applications requiring the full 2.5A rating must use the IRFBG30PBF.

Q: What are the key differences between the IRFBG30PBF and the original STP3NK100Z?

A: Both devices share the same 1000V drain-to-source voltage rating and TO-220 through-hole package configuration. The IRFBG30PBF provides higher continuous drain current (3.1A versus 2.5A) and greater power dissipation capability (125W versus 90W). The STP3NK100Z has lower gate charge (18 nC versus 80 nC) and lower input capacitance (601 pF versus 980 pF), which may result in faster switching characteristics in the original design. The IRFBG30PBF has a lower on-state resistance (5 Ohm versus 6 Ohm), improving conduction efficiency.

Q: Are the TO-220-3 and TO-220AB packages mechanically compatible?

A: Yes. The TO-220AB is a variant designation of the TO-220-3 package. Both refer to the same three-lead through-hole configuration with identical pin spacing and mounting hole dimensions, ensuring mechanical compatibility in PCB layouts designed for TO-220 devices.

Q: What is the significance of the gate charge difference between these devices?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The STP3NK100Z has a gate charge of 18 nC at 10V, while the IRFBG30PBF has 80 nC at 10V. Higher gate charge requires more charge delivery from the gate driver circuit and results in slower switching transitions. Applications with high-frequency switching or tight timing requirements should account for this difference during circuit redesign.

Q: Can I use the IRFBG30PBF in a circuit originally designed for the STP3NK100Z without modification?

A: The IRFBG30PBF is electrically and mechanically compatible with the STP3NK100Z and can be used as a direct substitute in most applications. However, the higher gate charge and input capacitance may require gate driver circuit evaluation to ensure adequate drive capability. The improved current rating and power dissipation of the IRFBG30PBF provide performance enhancement over the original specification.

Q: What is the product status significance for component selection?

A: The STP3NK100Z is classified as obsolete, indicating that STMicroelectronics no longer manufactures this device. Both substitute parts, IRFBG20PBF and IRFBG30PBF, carry active product status from Vishay Siliconix, ensuring continued availability and manufacturing support for new designs and ongoing production requirements.

Q: Are all three devices RoHS compliant?

A: Yes. The STP3NK100Z, IRFBG20PBF, and IRFBG30PBF are all ROHS3 compliant. The IRFBG30PBF carries REACH Affected status, while the STP3NK100Z and IRFBG20PBF are REACH Unaffected. Applications subject to REACH regulations should verify compliance requirements with the specific substitute part selected.

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