STP3HNK90Z Equivalent & Substitute Parts

Part Overview

The STP3HNK90Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800 V drain-to-source voltage with 3 A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and features a maximum power dissipation of 90 W. This component is part of the SuperMESH™ series and is currently classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	3	A
On-State Resistance (Rds On) @ 1.5A, 10V	4.2	Ω
Gate Threshold Voltage (Vgs(th)) @ 50µA	4.5	V
Gate Charge (Qg) @ 10V	35	nC
Input Capacitance (Ciss) @ 25V	690	pF
Power Dissipation (Max)	90	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STP3HNK90Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss) rating must equal or exceed 800 V
Continuous Drain Current (Id) must equal or exceed 3 A at 25°C
On-State Resistance (Rds On) must be compatible with circuit requirements
Gate Threshold Voltage (Vgs(th)) must fall within acceptable operating range
Package type must be TO-220 or compatible through-hole variant
Operating temperature range must encompass -55°C to 150°C

Substitution Categories:

Category 1: Direct STMicroelectronics SuperMESH™ Equivalents Parts STP3NK90Z and STP3NK90ZFP are from the same manufacturer and series. These devices maintain identical drain current ratings and operating temperature ranges. STP3NK90Z offers higher Vdss (900 V) with comparable Rds On characteristics. STP3NK90ZFP uses an alternative TO-220FP package with reduced power dissipation rating (25 W vs. 90 W).

Category 2: Higher-Performance Cross-Manufacturer Alternatives IRFBF30 and IRFBF30PBF (Vishay Siliconix) provide 900 V Vdss rating with increased drain current capability (3.6 A) and superior power dissipation (125 W). These devices are suitable for applications requiring enhanced thermal performance.

Category 3: Higher Voltage Rating Alternative IXTP3N120 (IXYS HiPerFET™) offers significantly elevated Vdss (1200 V) with identical 3 A drain current and superior power dissipation (200 W). This device is applicable in high-voltage applications where the 800 V rating of the original part is insufficient.

Parameter Comparison

Parameter	STP3HNK90Z	STP3NK90Z	STP3NK90ZFP	IRFBF30PBF	IXTP3N120
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	Vishay Siliconix	IXYS
Vdss (V)	800	900	900	900	1200
Id @ 25°C (A)	3	3	3	3.6	3
Rds On @ 10V (Ω)	4.2 @ 1.5A	4.8 @ 1.5A	4.8 @ 1.5A	3.7 @ 2.2A	4.5 @ 0.5A
Vgs(th) (V)	4.5	4.5	4.5	4	5
Qg @ 10V (nC)	35	22.7	22.7	78	42
Ciss @ 25V (pF)	690	590	590	1200	1350
Power Dissipation (W)	90	90	25	125	200
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3 Full Pack	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement with Minimal Circuit Modification: STP3NK90Z is the primary recommended substitute. This device maintains STMicroelectronics SuperMESH™ series continuity and is in active production status. The 900 V Vdss rating provides enhanced voltage margin over the original 800 V specification. Rds On characteristics are comparable, and gate charge is reduced (22.7 nC vs. 35 nC), resulting in improved switching efficiency. ROHS3 compliance and REACH unaffected status align with current regulatory requirements.

For Applications Requiring Enhanced Thermal Performance: IRFBF30PBF (Vishay Siliconix) offers superior power dissipation capability (125 W vs. 90 W) and increased drain current rating (3.6 A vs. 3 A). This device is suitable for designs operating at elevated ambient temperatures or with marginal thermal management. ROHS3 compliance and active production status support long-term availability. The higher input capacitance (1200 pF) and gate charge (78 nC) require gate drive circuit evaluation.

For High-Voltage Applications: IXTP3N120 (IXYS HiPerFET™) is applicable where circuit voltage stress exceeds 800 V. The 1200 V Vdss rating provides substantial voltage headroom. Superior power dissipation (200 W) and active production status support demanding thermal environments. Gate threshold voltage (5 V) and increased input capacitance (1350 pF) require gate drive circuit compatibility assessment.

Package Consideration: STP3NK90ZFP uses TO-220FP (full pack) variant with reduced power dissipation rating (25 W). This device is suitable only for low-power applications where thermal dissipation is not a limiting factor.

Frequently Asked Questions (FAQ)

Q: Can STP3NK90Z directly replace STP3HNK90Z without circuit modification? A: STP3NK90Z is a direct functional replacement. The 900 V Vdss rating exceeds the original 800 V specification, providing enhanced voltage margin. Rds On characteristics are comparable at the specified gate voltage. No circuit modification is required for standard applications. Gate drive circuits designed for 10 V gate voltage operation are compatible.

Q: What is the primary difference between STP3NK90Z and STP3NK90ZFP? A: Both devices share identical electrical characteristics (900 V Vdss, 3 A Id, 4.8 Ω Rds On). The primary difference is the package variant: STP3NK90Z uses standard TO-220-3 with 90 W power dissipation rating, while STP3NK90ZFP uses TO-220FP (full pack) with 25 W power dissipation rating. STP3NK90ZFP is suitable only for applications with minimal thermal load.

Q: How does IRFBF30PBF compare to STP3NK90Z for thermal performance? A: IRFBF30PBF provides superior power dissipation capability (125 W vs. 90 W) and higher drain current rating (3.6 A vs. 3 A). On-state resistance is lower (3.7 Ω @ 2.2A vs. 4.8 Ω @ 1.5A), resulting in reduced conduction losses. Gate charge is significantly higher (78 nC vs. 22.7 nC), requiring evaluation of gate drive circuit performance. Input capacitance is substantially increased (1200 pF vs. 590 pF), affecting switching speed.

Q: Is IXTP3N120 suitable for 800 V applications? A: IXTP3N120 is suitable for 800 V applications. The 1200 V Vdss rating provides substantial voltage margin above the 800 V requirement. Drain current rating (3 A) matches the original specification. On-state resistance (4.5 Ω @ 0.5A) is comparable. Gate threshold voltage (5 V) is slightly elevated, requiring gate drive circuit verification. Superior power dissipation (200 W) supports demanding thermal environments.

Q: What compliance certifications are maintained across all substitute parts? A: All substitute parts maintain ROHS3 compliance and REACH unaffected status, consistent with the original STP3HNK90Z. Operating temperature range (-55°C to 150°C) is identical across all devices. Moisture sensitivity level (MSL 1 - Unlimited) is consistent, indicating no special handling requirements.

Q: Are there package compatibility considerations when substituting these devices? A: All substitute parts use TO-220 or TO-220-3 through-hole packages, maintaining mechanical compatibility with the original STP3HNK90Z footprint. STP3NK90ZFP uses TO-220FP (full pack) variant, which is mechanically compatible but features different thermal characteristics. PCB layout and thermal management design should be evaluated based on the selected substitute's power dissipation rating.

Q: How do gate charge differences affect circuit design? A: STP3NK90Z and STP3NK90ZFP feature reduced gate charge (22.7 nC) compared to the original (35 nC), enabling faster switching with equivalent gate drive current. IRFBF30PBF exhibits significantly higher gate charge (78 nC), requiring increased gate drive current or extended switching time. IXTP3N120 gate charge (42 nC) is intermediate. Gate drive circuit design must accommodate the selected device's gate charge specification to ensure reliable switching performance.

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