STP36NF06FP N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STP36NF06FP is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage with 18A continuous drain current at 25°C. This device is part of the STripFET™ II series and features a Through Hole TO-220FP package. The part is classified as Obsolete, making equivalent and substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating available packaging options.

Substiute Parts

STP36NF06FP

STMicroelectronicsIn Stock: 15221STP36NF06FP Datasheet

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STP55NF06FP

STMicroelectronicsIn Stock: 10174STP55NF06FP Datasheet

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IRF1010EZPBF

Infineon TechnologiesIn Stock: 15422IRF1010EZPBF Datasheet

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IRFIZ34GPBF

Vishay SiliconixIn Stock: 9770IRFIZ34GPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STP36NF06FP is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss) must equal or exceed 60V
• Continuous Drain Current (Id) must meet or exceed 18A at 25°C
• Gate Threshold Voltage (Vgs(th)) must be compatible at 4V nominal
• Maximum Gate Voltage (Vgs) must accommodate ±20V operation
• Operating Temperature Range must span -55°C to 175°C

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package compatibility: TO-220 family variants acceptable (TO-220FP, TO-220AB, TO-220-3)
• Pin configuration: Standard 3-pin MOSFET layout

Regulatory Compliance:

• RoHS3 Compliant status required
• REACH Unaffected classification required
• Moisture Sensitivity Level (MSL) 1 (Unlimited) required

Substitute parts are grouped into three categories based on current rating and thermal performance relative to the original specification.

Parameter Comparison

Engineering Selection Recommendations

STP55NF06FP (STMicroelectronics)

This substitute provides direct electrical compatibility with enhanced performance characteristics. Both devices share identical Vdss (60V) and Vgs(th) (4V) specifications. The STP55NF06FP offers 50A continuous drain current versus the original 18A, with improved Rds On performance (18mOhm versus 40mOhm). The device maintains the same TO-220FP package footprint, enabling direct PCB layout compatibility. Product status is Active, ensuring long-term availability. RoHS3 compliance and REACH Unaffected status are maintained. This substitute is suitable for applications requiring higher current capacity or improved thermal performance within the same form factor.

IRF1010EZPBF (Infineon Technologies)

This substitute exceeds the electrical specifications of the original part across all critical parameters. The 75A continuous drain current and 8.5mOhm Rds On represent significant performance improvements. The 140W power dissipation rating provides substantial thermal headroom. The device uses a TO-220AB package variant, which maintains Through Hole mounting compatibility and standard 3-pin MOSFET configuration. Product status is Active with full RoHS3 and REACH compliance. This substitute is appropriate for applications where higher current handling and reduced on-resistance are beneficial, with minor package variant accommodation required.

IRFIZ34GPBF (Vishay Siliconix)

This substitute provides near-equivalent electrical performance with 20A continuous drain current, closely matching the original 18A specification. The 50mOhm Rds On is slightly higher than the original 40mOhm specification. The 42W power dissipation rating exceeds the original 25W. The device uses a TO-220-3 package with isolated tab configuration, maintaining Through Hole mounting and standard pin layout. Product status is Active with full RoHS3 and REACH compliance. This substitute is suitable for direct replacement in applications where current and thermal specifications are non-critical or where the isolated tab feature provides additional design flexibility.

Frequently Asked Questions (FAQ)

Q: Can the STP36NF06FP be replaced with any of these substitute parts?

A: Yes, all three substitute parts meet the minimum electrical requirements for the STP36NF06FP. Each maintains 60V Vdss rating, 4V Vgs(th), ±20V maximum gate voltage, and -55°C to 175°C operating temperature range. All are Through Hole mounted and RoHS3 compliant. Selection depends on application-specific requirements for current capacity, on-resistance, and thermal performance.

Q: What is the difference between the TO-220FP, TO-220AB, and TO-220-3 packages?

A: All three are Through Hole TO-220 family packages with standard 3-pin MOSFET configuration. TO-220FP and TO-220AB differ in tab isolation and mechanical details but are electrically equivalent for standard applications. TO-220-3 with isolated tab provides additional electrical isolation options. PCB footprints are compatible across all variants with minor mechanical accommodation.

Q: Which substitute offers the best performance improvement?

A: The IRF1010EZPBF provides the highest performance with 75A continuous current, 8.5mOhm on-resistance, and 140W power dissipation. The STP55NF06FP offers balanced improvement with 50A current and 18mOhm on-resistance while maintaining identical package compatibility. The IRFIZ34GPBF provides minimal performance change with 20A current, suitable for direct replacement scenarios.

Q: Are all substitutes RoHS3 compliant and REACH unaffected?

A: Yes, all three substitute parts carry RoHS3 Compliant status and REACH Unaffected classification, matching the original STP36NF06FP. All maintain Moisture Sensitivity Level 1 (Unlimited) rating.

Q: What is the impact of higher gate charge on circuit design?

A: The STP55NF06FP (60nC), IRF1010EZPBF (86nC), and IRFIZ34GPBF (46nC) have higher gate charge than the original (31nC). Higher gate charge requires increased driver current or longer switching times. Circuit designs with current-limited gate drivers may require adjustment. The IRFIZ34GPBF presents minimal gate charge increase and is suitable for designs with tight gate driver constraints.

Q: Can these parts be used in high-frequency switching applications?

A: All substitute parts maintain the same operating temperature range and voltage ratings. Gate charge differences affect switching speed: lower gate charge (IRFIZ34GPBF at 46nC) enables faster switching than higher gate charge devices (IRF1010EZPBF at 86nC). Application-specific frequency requirements determine suitability.

Q: Is the STP55NF06FP a direct drop-in replacement?

A: Yes, the STP55NF06FP is a direct drop-in replacement. It maintains identical TO-220FP package, pin configuration, voltage ratings, and gate threshold voltage. No PCB modifications are required. The higher current rating and improved on-resistance provide performance enhancement without design changes.