STP35NF10 N-Channel MOSFET 100V 40A TO-220 Equivalent & Substitute Parts

Part Overview

The STP35NF10 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage and 40A continuous drain current in the TO-220 package. This device is part of the STripFET™ II series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	40	A (Tc)
On-State Resistance (Rds On) @ 10V	35	mOhm @ 17.5A, 10V
Gate Threshold Voltage (Vgs(th))	4	V @ 250µA
Gate Charge (Qg) @ 10V	55	nC
Power Dissipation (Max)	115	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the STP35NF10 is determined by the following critical parameters:

Mandatory Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V minimum
FET Type: N-Channel MOSFET
Package: TO-220-3 (Through Hole)
Operating Temperature Range: -55°C to 175°C
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): 40A or greater
On-State Resistance (Rds On): 35mOhm or lower at rated conditions
Gate Charge (Qg): 55nC or lower
Power Dissipation: 115W or greater

Substitute parts are grouped into two categories:

Direct Equivalents: Parts meeting or exceeding all mandatory and performance parameters with minimal deviations in electrical characteristics.

Functional Alternatives: Parts with higher current ratings, lower on-state resistance, or enhanced power dissipation that provide superior performance while maintaining full compatibility with the original design envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
STP35NF10	STMicroelectronics	100	40	35 @ 17.5A, 10V	55 @ 10V	115	Obsolete	TO-220-3
IRF1310NPBF	Infineon Technologies	100	42	36 @ 22A, 10V	110 @ 10V	160	Active	TO-220-3
FQP44N10	onsemi	100	43.5	39 @ 21.75A, 10V	62 @ 10V	146	Obsolete	TO-220-3
IRF540NPBF	Infineon Technologies	100	33	44 @ 16A, 10V	71 @ 10V	130	Active	TO-220-3
IRF540ZPBF	Infineon Technologies	100	36	26.5 @ 22A, 10V	63 @ 10V	92	Active	TO-220-3
IRL540NPBF	Infineon Technologies	100	36	44 @ 18A, 10V	74 @ 5V	140	Active	TO-220-3
FDP3682	onsemi	100	32	36 @ 32A, 10V	28 @ 10V	95	Active	TO-220-3
PHP18NQ10T,127	Nexperia USA Inc.	100	18	90 @ 9A, 10V	21 @ 10V	79	Obsolete	TO-220-3
PSMN009-100P,127	NXP Semiconductors	100	75	8.8 @ 25A, 10V	156 @ 10V	230	Active	TO-220-3
PSMN013-100PS,127	Nexperia USA Inc.	100	68	13.9 @ 15A, 10V	59 @ 10V	170	Obsolete	TO-220-3
PSMN015-100P,127	Nexperia USA Inc.	100	75	15 @ 25A, 10V	90 @ 10V	300	Obsolete	TO-220-3

Engineering Selection Recommendations

Primary Recommendation: IRF1310NPBF

The IRF1310NPBF from Infineon Technologies is the preferred direct substitute for the STP35NF10. This device is in active production status, ensuring long-term availability. It matches the 100V Vdss rating and exceeds the 40A continuous drain current specification with 42A capability. The on-state resistance of 36mOhm is comparable to the original part, and power dissipation of 160W provides enhanced thermal performance. The device maintains full electrical compatibility with the original design while offering improved reliability through active manufacturer support.

Secondary Recommendation: IRF540ZPBF

The IRF540ZPBF from Infineon Technologies provides an alternative with active product status. This device delivers superior on-state resistance of 26.5mOhm at 22A, resulting in lower power dissipation and improved efficiency. While the continuous drain current rating of 36A is slightly below the original 40A specification, this device is suitable for applications where current demand does not consistently reach the maximum rating. The lower gate charge of 63nC facilitates faster switching characteristics.

Alternative for High-Current Applications: PSMN009-100P,127

The PSMN009-100P,127 from NXP Semiconductors is recommended for applications requiring current capacity beyond the original specification. This device provides 75A continuous drain current with exceptionally low on-state resistance of 8.8mOhm, resulting in minimal power dissipation and superior thermal efficiency. The 230W power dissipation rating accommodates high-power switching applications. This part is in active production status.

Compliance and Certification:

All recommended substitute parts are RoHS3 compliant and REACH unaffected, matching the regulatory status of the original STP35NF10. All devices operate across the full temperature range of -55°C to 175°C (TJ), ensuring compatibility with existing thermal management designs.

Frequently Asked Questions (FAQ)

Q: Can the IRF1310NPBF directly replace the STP35NF10 in existing PCB designs?

A: Yes. The IRF1310NPBF is packaged in TO-220-3, matching the original part's pinout and footprint. No PCB modifications are required. The electrical characteristics are compatible with designs rated for 100V, 40A operation.

Q: What is the primary difference between IRF540NPBF and IRF540ZPBF?

A: Both devices share the same base part number (IRF540) but differ in on-state resistance and power dissipation. The IRF540ZPBF features lower on-state resistance (26.5mOhm versus 44mOhm), resulting in reduced power dissipation (92W versus 130W). The IRF540NPBF provides higher power dissipation capability, making it suitable for applications with higher switching losses.

Q: Is the PSMN009-100P,127 suitable for designs originally specified for 40A continuous current?

A: Yes. The PSMN009-100P,127 provides 75A continuous drain current, exceeding the original 40A requirement. The device is fully compatible with designs rated for 40A operation. The superior current capacity and lower on-state resistance provide enhanced performance margins and reduced thermal stress.

Q: Why is the FDP3682 not recommended as a primary substitute despite active status?

A: The FDP3682 has a continuous drain current rating of 32A at Tc, which falls below the original 40A specification. While the device is in active production and offers low gate charge (28nC), it does not meet the minimum current requirement for direct substitution in applications demanding the full 40A rating.

Q: Are there any gate drive voltage differences between substitute parts?

A: All substitute parts listed operate with a maximum gate-source voltage (Vgs) of ±20V, matching the original STP35NF10 specification. The IRL540NPBF has a lower maximum Vgs of ±16V and a lower gate threshold voltage of 2V at 250µA, requiring attention to gate drive circuit design if selected.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects switching speed and gate drive power requirements. The original STP35NF10 has a gate charge of 55nC. Substitute parts with lower gate charge (such as FDP3682 at 28nC) enable faster switching and reduce gate drive losses. Parts with higher gate charge (such as PSMN009-100P,127 at 156nC) require more robust gate drive circuits but may offer lower on-state resistance.

Q: Can obsolete substitute parts be used in new production designs?

A: Obsolete parts such as FQP44N10, PHP18NQ10T,127, PSMN013-100PS,127, and PSMN015-100P,127 should not be specified for new production designs. These parts lack long-term availability guarantees. Active-status parts (IRF1310NPBF, IRF540ZPBF, PSMN009-100P,127) are recommended for new designs to ensure supply chain continuity.

Q: What thermal considerations apply when substituting with higher-power-rated devices?

A: Devices with higher power dissipation ratings (such as PSMN015-100P,127 at 300W) do not require modified thermal management if the application current remains at or below 40A. However, if the design exploits the higher current capability of substitute parts, thermal management must be re-evaluated to accommodate increased power dissipation.

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